HfO2 / HfOx Ny / HfO2 gate dielectric fabricated by in situ oxidation of plasma-enhanced atomic layer deposition HfN middle layer

W. J. Maeng, Gil Ho Gu, C. G. Park, Kayoung Lee, Taeyoon Lee, Hyungjun Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

By using H2plasma as a reactant with tetrakis(dimethylamino) hafnium precursor during plasma-enhanced atomic layer deposition, we deposited the HfOx Ny layer between HfO2 layers. The 5 nm thick HfO2 / HfOx Ny / HfO2 (HfONO) trilayer gate oxide shows reduced capacitance equivalent oxide thickness (1.25 nm) than that (1.40 nm) of the HfO2 film with the same thickness due to the contribution of nitrogen incorporation to the high dielectric constant. The HfONO film utilizing H2plasma shows lower values of interface trap density (Dit), trapped positive charge density (Δ Np), and gate leakage currents than the HfO2 layer with the same thickness while maintaining comparable hysteresis (30 mV). The results can be attributed to the presence of N-H bonds, which can reduce localized states below the conduction band and prevent the conduction-band lowering, and decrement of N-N and N-O bonds, which contribute to trap density, confirmed by the combination of X-ray photoelectron spectroscopy and near-edge X-ray absorption fine-structure analyses.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume156
Issue number8
DOIs
Publication statusPublished - 2009 Jul 22

Fingerprint

Atomic layer deposition
Gate dielectrics
Conduction bands
Oxides
Hafnium
Plasmas
Oxidation
X ray absorption
Charge density
Leakage currents
Hysteresis
Permittivity
Capacitance
Nitrogen
X ray photoelectron spectroscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

@article{8bd8886bb2c049568464f1f7bba31c97,
title = "HfO2 / HfOx Ny / HfO2 gate dielectric fabricated by in situ oxidation of plasma-enhanced atomic layer deposition HfN middle layer",
abstract = "By using H2plasma as a reactant with tetrakis(dimethylamino) hafnium precursor during plasma-enhanced atomic layer deposition, we deposited the HfOx Ny layer between HfO2 layers. The 5 nm thick HfO2 / HfOx Ny / HfO2 (HfONO) trilayer gate oxide shows reduced capacitance equivalent oxide thickness (1.25 nm) than that (1.40 nm) of the HfO2 film with the same thickness due to the contribution of nitrogen incorporation to the high dielectric constant. The HfONO film utilizing H2plasma shows lower values of interface trap density (Dit), trapped positive charge density (Δ Np), and gate leakage currents than the HfO2 layer with the same thickness while maintaining comparable hysteresis (30 mV). The results can be attributed to the presence of N-H bonds, which can reduce localized states below the conduction band and prevent the conduction-band lowering, and decrement of N-N and N-O bonds, which contribute to trap density, confirmed by the combination of X-ray photoelectron spectroscopy and near-edge X-ray absorption fine-structure analyses.",
author = "Maeng, {W. J.} and Gu, {Gil Ho} and Park, {C. G.} and Kayoung Lee and Taeyoon Lee and Hyungjun Kim",
year = "2009",
month = "7",
day = "22",
doi = "10.1149/1.3147254",
language = "English",
volume = "156",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "8",

}

HfO2 / HfOx Ny / HfO2 gate dielectric fabricated by in situ oxidation of plasma-enhanced atomic layer deposition HfN middle layer. / Maeng, W. J.; Gu, Gil Ho; Park, C. G.; Lee, Kayoung; Lee, Taeyoon; Kim, Hyungjun.

In: Journal of the Electrochemical Society, Vol. 156, No. 8, 22.07.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - HfO2 / HfOx Ny / HfO2 gate dielectric fabricated by in situ oxidation of plasma-enhanced atomic layer deposition HfN middle layer

AU - Maeng, W. J.

AU - Gu, Gil Ho

AU - Park, C. G.

AU - Lee, Kayoung

AU - Lee, Taeyoon

AU - Kim, Hyungjun

PY - 2009/7/22

Y1 - 2009/7/22

N2 - By using H2plasma as a reactant with tetrakis(dimethylamino) hafnium precursor during plasma-enhanced atomic layer deposition, we deposited the HfOx Ny layer between HfO2 layers. The 5 nm thick HfO2 / HfOx Ny / HfO2 (HfONO) trilayer gate oxide shows reduced capacitance equivalent oxide thickness (1.25 nm) than that (1.40 nm) of the HfO2 film with the same thickness due to the contribution of nitrogen incorporation to the high dielectric constant. The HfONO film utilizing H2plasma shows lower values of interface trap density (Dit), trapped positive charge density (Δ Np), and gate leakage currents than the HfO2 layer with the same thickness while maintaining comparable hysteresis (30 mV). The results can be attributed to the presence of N-H bonds, which can reduce localized states below the conduction band and prevent the conduction-band lowering, and decrement of N-N and N-O bonds, which contribute to trap density, confirmed by the combination of X-ray photoelectron spectroscopy and near-edge X-ray absorption fine-structure analyses.

AB - By using H2plasma as a reactant with tetrakis(dimethylamino) hafnium precursor during plasma-enhanced atomic layer deposition, we deposited the HfOx Ny layer between HfO2 layers. The 5 nm thick HfO2 / HfOx Ny / HfO2 (HfONO) trilayer gate oxide shows reduced capacitance equivalent oxide thickness (1.25 nm) than that (1.40 nm) of the HfO2 film with the same thickness due to the contribution of nitrogen incorporation to the high dielectric constant. The HfONO film utilizing H2plasma shows lower values of interface trap density (Dit), trapped positive charge density (Δ Np), and gate leakage currents than the HfO2 layer with the same thickness while maintaining comparable hysteresis (30 mV). The results can be attributed to the presence of N-H bonds, which can reduce localized states below the conduction band and prevent the conduction-band lowering, and decrement of N-N and N-O bonds, which contribute to trap density, confirmed by the combination of X-ray photoelectron spectroscopy and near-edge X-ray absorption fine-structure analyses.

UR - http://www.scopus.com/inward/record.url?scp=67650578509&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67650578509&partnerID=8YFLogxK

U2 - 10.1149/1.3147254

DO - 10.1149/1.3147254

M3 - Article

AN - SCOPUS:67650578509

VL - 156

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 8

ER -