HfSi xO y-HfO 2 gate insulator for thin film transistors

S. W. Jeong, K. S. Kim, M. T. You, Y. Roh, T. Noguchi, J. Jung, J. Y. Kwon

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9 Citations (Scopus)

Abstract

We propose a new technique to grow HfSi xO yHfO 2 film on Si substrate by using a 500°C process, and demonstrate the feasibility of multi-layered high-k oxide film (i.e., HfSi xO y-HfO 2) as alternative gate insulator for thin film transistors (TFTs). Hf metal films were directly deposited on Si wafers at substrate temperatures of 25 - 400°C by using a non-reactive rf-magnetron sputtering system. Oxidation at 500°C in dry O 2 ambient and subsequent annealing at the same temperature in N 2 ambient result in electrically stable multi-layered HfSi xO y-HfO 2 gate insulator for TFTs. We also investigate the effects of the substrate temperature on the physical and electrical properties of HfSi xO y-HfO 2 films, and show that substrate temperature must be set at 25°C for the sputtering of Hf metal films to obtain optimum electrical characteristics (e.g., high dielectric constant, no hysteresis phenomenon, and low leakage current).

Original languageEnglish
Pages (from-to)S401-S403
JournalJournal of the Korean Physical Society
Volume47
Issue numberSUPPL. 3
Publication statusPublished - 2005 Nov

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Jeong, S. W., Kim, K. S., You, M. T., Roh, Y., Noguchi, T., Jung, J., & Kwon, J. Y. (2005). HfSi xO y-HfO 2 gate insulator for thin film transistors. Journal of the Korean Physical Society, 47(SUPPL. 3), S401-S403.