HfSi xO y-HfO 2 gate insulator for thin film transistors

S. W. Jeong, K. S. Kim, M. T. You, Y. Roh, T. Noguchi, J. Jung, J. Y. Kwon

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We propose a new technique to grow HfSi xO yHfO 2 film on Si substrate by using a 500°C process, and demonstrate the feasibility of multi-layered high-k oxide film (i.e., HfSi xO y-HfO 2) as alternative gate insulator for thin film transistors (TFTs). Hf metal films were directly deposited on Si wafers at substrate temperatures of 25 - 400°C by using a non-reactive rf-magnetron sputtering system. Oxidation at 500°C in dry O 2 ambient and subsequent annealing at the same temperature in N 2 ambient result in electrically stable multi-layered HfSi xO y-HfO 2 gate insulator for TFTs. We also investigate the effects of the substrate temperature on the physical and electrical properties of HfSi xO y-HfO 2 films, and show that substrate temperature must be set at 25°C for the sputtering of Hf metal films to obtain optimum electrical characteristics (e.g., high dielectric constant, no hysteresis phenomenon, and low leakage current).

Original languageEnglish
Pages (from-to)S401-S403
JournalJournal of the Korean Physical Society
Volume47
Issue numberSUPPL. 3
Publication statusPublished - 2005 Nov 1

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transistors
insulators
thin films
metal films
temperature
oxide films
magnetron sputtering
leakage
physical properties
sputtering
hysteresis
electrical properties
wafers
permittivity
oxidation
annealing

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Jeong, S. W., Kim, K. S., You, M. T., Roh, Y., Noguchi, T., Jung, J., & Kwon, J. Y. (2005). HfSi xO y-HfO 2 gate insulator for thin film transistors. Journal of the Korean Physical Society, 47(SUPPL. 3), S401-S403.
Jeong, S. W. ; Kim, K. S. ; You, M. T. ; Roh, Y. ; Noguchi, T. ; Jung, J. ; Kwon, J. Y. / HfSi xO y-HfO 2 gate insulator for thin film transistors. In: Journal of the Korean Physical Society. 2005 ; Vol. 47, No. SUPPL. 3. pp. S401-S403.
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Jeong, SW, Kim, KS, You, MT, Roh, Y, Noguchi, T, Jung, J & Kwon, JY 2005, 'HfSi xO y-HfO 2 gate insulator for thin film transistors', Journal of the Korean Physical Society, vol. 47, no. SUPPL. 3, pp. S401-S403.

HfSi xO y-HfO 2 gate insulator for thin film transistors. / Jeong, S. W.; Kim, K. S.; You, M. T.; Roh, Y.; Noguchi, T.; Jung, J.; Kwon, J. Y.

In: Journal of the Korean Physical Society, Vol. 47, No. SUPPL. 3, 01.11.2005, p. S401-S403.

Research output: Contribution to journalArticle

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AU - You, M. T.

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AU - Jung, J.

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Jeong SW, Kim KS, You MT, Roh Y, Noguchi T, Jung J et al. HfSi xO y-HfO 2 gate insulator for thin film transistors. Journal of the Korean Physical Society. 2005 Nov 1;47(SUPPL. 3):S401-S403.