High-capacitance ion gel gate dielectrics with faster polarization response times for organic thin film transistors

Jeong Ho Cho, Jiyoul Lee, Yiyong He, Bongsoo Kim, Timothy P. Lodge, C. Daniel Frisbie

Research output: Contribution to journalArticle

247 Citations (Scopus)

Abstract

High-capacitance ion gel-gates organic thin-film transistors (GEL-OTFT) with faster polarization response times, was demonstrated to operate frequencies up to 1 kHz. The capacitance-voltage (C-V) measurements on the ion gels at 10 Hz shows that the capacitance of metal-insulator-semiconductor (MIS) structure increases upon sweeping the bias applied to the top copper contact. The approximately equivalent amounts of injected and removed charge indicate that deep trapping of holes is not significant. The results also show that [EMIM][TFSI]-based GEL-OTFT can track 1 kHz input signal-based OTFTs. The bimodal drain current response suggests quick and short-range motions of cations and anions near the interfaces and slow ionic diffusion over longer distances. It is also maintained that short-range motion of cations and anions in the gel near the gel/semiconductor interface is responsible for the fast response.

Original languageEnglish
Pages (from-to)686-690
Number of pages5
JournalAdvanced Materials
Volume20
Issue number4
DOIs
Publication statusPublished - 2008 Feb 18

Fingerprint

Gate dielectrics
Thin film transistors
Capacitance
Gels
Ions
Polarization
Anions
Cations
Negative ions
Positive ions
Semiconductor materials
Gates (transistor)
Capacitance measurement
Drain current
Voltage measurement
Copper
Metals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Cho, Jeong Ho ; Lee, Jiyoul ; He, Yiyong ; Kim, Bongsoo ; Lodge, Timothy P. ; Frisbie, C. Daniel. / High-capacitance ion gel gate dielectrics with faster polarization response times for organic thin film transistors. In: Advanced Materials. 2008 ; Vol. 20, No. 4. pp. 686-690.
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abstract = "High-capacitance ion gel-gates organic thin-film transistors (GEL-OTFT) with faster polarization response times, was demonstrated to operate frequencies up to 1 kHz. The capacitance-voltage (C-V) measurements on the ion gels at 10 Hz shows that the capacitance of metal-insulator-semiconductor (MIS) structure increases upon sweeping the bias applied to the top copper contact. The approximately equivalent amounts of injected and removed charge indicate that deep trapping of holes is not significant. The results also show that [EMIM][TFSI]-based GEL-OTFT can track 1 kHz input signal-based OTFTs. The bimodal drain current response suggests quick and short-range motions of cations and anions near the interfaces and slow ionic diffusion over longer distances. It is also maintained that short-range motion of cations and anions in the gel near the gel/semiconductor interface is responsible for the fast response.",
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High-capacitance ion gel gate dielectrics with faster polarization response times for organic thin film transistors. / Cho, Jeong Ho; Lee, Jiyoul; He, Yiyong; Kim, Bongsoo; Lodge, Timothy P.; Frisbie, C. Daniel.

In: Advanced Materials, Vol. 20, No. 4, 18.02.2008, p. 686-690.

Research output: Contribution to journalArticle

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