High concentration of nitrogen doped into graphene using N2 plasma with an aluminum oxide buffer layer

Sang Han Park, Jimin Chae, Mann-Ho Cho, Joo Hyoung Kim, Kyung-hwa Yoo, Sangwan Cho, Tae Gun Kim, Jeong Won Kim

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

We performed plasma doping of nitrogen into single-layer graphene on SiO2. Using aluminum oxide as a buffer layer to reduce the plasma damage, up to 19.7% nitrogen was substitutionally doped into graphene. The nitrogen doping of graphene was confirmed by Raman and X-ray photoemission spectroscopy analyses. The n-doping property of the N-doped graphene was measured by Raman spectroscopy. Raman mapping was carried out to statistically confirm the Dirac cone shift of graphene resulting from the N-doping. The Dirac cone shift was directly measured by ultraviolet photoemission spectroscopy (UPS). The UPS result was consistent with the value calculated from the Raman G peak shift.

Original languageEnglish
Pages (from-to)933-939
Number of pages7
JournalJournal of Materials Chemistry C
Volume2
Issue number5
DOIs
Publication statusPublished - 2014 Feb 7

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Aluminum Oxide
Buffer layers
Graphene
Nitrogen
Aluminum
Plasmas
Photoelectron spectroscopy
Oxides
Doping (additives)
Ultraviolet spectroscopy
Cones
X ray spectroscopy
Raman spectroscopy

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

Park, Sang Han ; Chae, Jimin ; Cho, Mann-Ho ; Kim, Joo Hyoung ; Yoo, Kyung-hwa ; Cho, Sangwan ; Kim, Tae Gun ; Kim, Jeong Won. / High concentration of nitrogen doped into graphene using N2 plasma with an aluminum oxide buffer layer. In: Journal of Materials Chemistry C. 2014 ; Vol. 2, No. 5. pp. 933-939.
@article{b4a569fa92484a00a352673e3d2338a9,
title = "High concentration of nitrogen doped into graphene using N2 plasma with an aluminum oxide buffer layer",
abstract = "We performed plasma doping of nitrogen into single-layer graphene on SiO2. Using aluminum oxide as a buffer layer to reduce the plasma damage, up to 19.7{\%} nitrogen was substitutionally doped into graphene. The nitrogen doping of graphene was confirmed by Raman and X-ray photoemission spectroscopy analyses. The n-doping property of the N-doped graphene was measured by Raman spectroscopy. Raman mapping was carried out to statistically confirm the Dirac cone shift of graphene resulting from the N-doping. The Dirac cone shift was directly measured by ultraviolet photoemission spectroscopy (UPS). The UPS result was consistent with the value calculated from the Raman G peak shift.",
author = "Park, {Sang Han} and Jimin Chae and Mann-Ho Cho and Kim, {Joo Hyoung} and Kyung-hwa Yoo and Sangwan Cho and Kim, {Tae Gun} and Kim, {Jeong Won}",
year = "2014",
month = "2",
day = "7",
doi = "10.1039/c3tc31773k",
language = "English",
volume = "2",
pages = "933--939",
journal = "Journal of Materials Chemistry C",
issn = "2050-7526",
publisher = "Royal Society of Chemistry",
number = "5",

}

High concentration of nitrogen doped into graphene using N2 plasma with an aluminum oxide buffer layer. / Park, Sang Han; Chae, Jimin; Cho, Mann-Ho; Kim, Joo Hyoung; Yoo, Kyung-hwa; Cho, Sangwan; Kim, Tae Gun; Kim, Jeong Won.

In: Journal of Materials Chemistry C, Vol. 2, No. 5, 07.02.2014, p. 933-939.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High concentration of nitrogen doped into graphene using N2 plasma with an aluminum oxide buffer layer

AU - Park, Sang Han

AU - Chae, Jimin

AU - Cho, Mann-Ho

AU - Kim, Joo Hyoung

AU - Yoo, Kyung-hwa

AU - Cho, Sangwan

AU - Kim, Tae Gun

AU - Kim, Jeong Won

PY - 2014/2/7

Y1 - 2014/2/7

N2 - We performed plasma doping of nitrogen into single-layer graphene on SiO2. Using aluminum oxide as a buffer layer to reduce the plasma damage, up to 19.7% nitrogen was substitutionally doped into graphene. The nitrogen doping of graphene was confirmed by Raman and X-ray photoemission spectroscopy analyses. The n-doping property of the N-doped graphene was measured by Raman spectroscopy. Raman mapping was carried out to statistically confirm the Dirac cone shift of graphene resulting from the N-doping. The Dirac cone shift was directly measured by ultraviolet photoemission spectroscopy (UPS). The UPS result was consistent with the value calculated from the Raman G peak shift.

AB - We performed plasma doping of nitrogen into single-layer graphene on SiO2. Using aluminum oxide as a buffer layer to reduce the plasma damage, up to 19.7% nitrogen was substitutionally doped into graphene. The nitrogen doping of graphene was confirmed by Raman and X-ray photoemission spectroscopy analyses. The n-doping property of the N-doped graphene was measured by Raman spectroscopy. Raman mapping was carried out to statistically confirm the Dirac cone shift of graphene resulting from the N-doping. The Dirac cone shift was directly measured by ultraviolet photoemission spectroscopy (UPS). The UPS result was consistent with the value calculated from the Raman G peak shift.

UR - http://www.scopus.com/inward/record.url?scp=84891816251&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84891816251&partnerID=8YFLogxK

U2 - 10.1039/c3tc31773k

DO - 10.1039/c3tc31773k

M3 - Article

VL - 2

SP - 933

EP - 939

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

SN - 2050-7526

IS - 5

ER -