High concentration of nitrogen doped into graphene using N2 plasma with an aluminum oxide buffer layer

Sang Han Park, Jimin Chae, Mann Ho Cho, Joo Hyoung Kim, Kyung Hwa Yoo, Sang Wan Cho, Tae Gun Kim, Jeong Won Kim

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

We performed plasma doping of nitrogen into single-layer graphene on SiO2. Using aluminum oxide as a buffer layer to reduce the plasma damage, up to 19.7% nitrogen was substitutionally doped into graphene. The nitrogen doping of graphene was confirmed by Raman and X-ray photoemission spectroscopy analyses. The n-doping property of the N-doped graphene was measured by Raman spectroscopy. Raman mapping was carried out to statistically confirm the Dirac cone shift of graphene resulting from the N-doping. The Dirac cone shift was directly measured by ultraviolet photoemission spectroscopy (UPS). The UPS result was consistent with the value calculated from the Raman G peak shift.

Original languageEnglish
Pages (from-to)933-939
Number of pages7
JournalJournal of Materials Chemistry C
Volume2
Issue number5
DOIs
Publication statusPublished - 2014 Feb 7

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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