High conversion gain millimeter-wave optoelectronic mixer based on InAIAs/InGaAs metamorphic HEMT

Hyo Soon Kang, Chang Soon Choi, Woo Young Choi, Dae Hyun Kim, Kwang Seok Seo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We experimentally investigate the InAIAs/InGaAs metamorphic HEMT (m-HEMT) on GaAs substrate as a millimeter-wave optoelectronic mixer. The maximum internal conversion gain of 18.17 dB is obtained with 0 dBm local oscillator (LO) power. The m-HEMT exhibits a wide LO frequency range which is well extended to the millimeter-wave band. We also measured the spurious free dynamic range of the m-HEMT as an optoelectronic mixer, whose value is about 96 dB· Hz2/3.

Original languageEnglish
Title of host publicationMWP 2003 - Proceedings, International Topical Meeting on Microwave Photonics
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages105-108
Number of pages4
ISBN (Electronic)0780386914, 9780780386914
DOIs
Publication statusPublished - 2003 Jan 1
EventInternational Topical Meeting on Microwave Photonics, MWP 2003 - Budapest, Hungary
Duration: 2003 Sep 102003 Sep 12

Publication series

NameMWP 2003 - Proceedings, International Topical Meeting on Microwave Photonics

Other

OtherInternational Topical Meeting on Microwave Photonics, MWP 2003
CountryHungary
CityBudapest
Period03/9/1003/9/12

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Computer Networks and Communications

Cite this

Kang, H. S., Choi, C. S., Choi, W. Y., Kim, D. H., & Seo, K. S. (2003). High conversion gain millimeter-wave optoelectronic mixer based on InAIAs/InGaAs metamorphic HEMT. In MWP 2003 - Proceedings, International Topical Meeting on Microwave Photonics (pp. 105-108). [1422838] (MWP 2003 - Proceedings, International Topical Meeting on Microwave Photonics). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWP.2003.1422838