High crystalline dithienosilole-cored small molecule semiconductor for ambipolar transistor and nonvolatile memory

Woonggi Kang, Minwoo Jung, Wonsuk Cha, Sukjae Jang, Youngwoon Yoon, Hyunjung Kim, Hae Jung Son, Doh Kwon Lee, Bongsoo Kim, Jeong Ho Cho

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We characterized the electrical properties of a field-effect transistor (FET) and a nonvolatile memory device based on a solution-processable low bandgap small molecule, Si1TDPP-EE-C6. The small molecule consisted of electron-rich thiophene-dithienosilole-thiophene (Si1T) units and electron-deficient diketopyrrolopyrrole (DPP) units. The as-spun Si1TDPP-EE-C6 FET device exhibited ambipolar transport properties with a hole mobility of 7.3 × 10-5 cm2/(V s) and an electron mobility of 1.6 × 10-5 cm2/(V s). Thermal annealing at 110 °C led to a significant increase in carrier mobility, with hole and electron mobilities of 3.7 × 10-3 and 5.1 × 10-4 cm2/(Vs), respectively. This improvement is strongly correlated with the increased film crystallinity and reduced π-π intermolecular stacking distance upon thermal annealing, revealed by grazing incidence X-ray diffraction (GIXD) and atomic force microscopy (AFM) measurements. In addition, nonvolatile memory devices based on Si1TDPP-EE-C6 were successfully fabricated by incorporating Au nanoparticles (AuNPs) as charge trapping sites at the interface between the silicon oxide (SiO2) and cross-linked poly(4-vinylphenol) (cPVP) dielectrics. The device exhibited reliable nonvolatile memory characteristics, including a wide memory window of 98 V, a high on/off-current ratio of 1 × 103, and good electrical reliability. Overall, we demonstrate that donor-Acceptor-type small molecules are a potentially important class of materials for ambipolar FETs and nonvolatile memory applications.

Original languageEnglish
Pages (from-to)6589-6597
Number of pages9
JournalACS Applied Materials and Interfaces
Volume6
Issue number9
DOIs
Publication statusPublished - 2014 May 14

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Transistors
Semiconductor materials
Crystalline materials
Data storage equipment
Field effect transistors
Molecules
Thiophenes
Hole mobility
Electron mobility
Thiophene
Annealing
Electron transport properties
Charge trapping
Electrons
Carrier mobility
Silicon oxides
Atomic force microscopy
Electric properties
Energy gap
Nanoparticles

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Kang, Woonggi ; Jung, Minwoo ; Cha, Wonsuk ; Jang, Sukjae ; Yoon, Youngwoon ; Kim, Hyunjung ; Son, Hae Jung ; Lee, Doh Kwon ; Kim, Bongsoo ; Cho, Jeong Ho. / High crystalline dithienosilole-cored small molecule semiconductor for ambipolar transistor and nonvolatile memory. In: ACS Applied Materials and Interfaces. 2014 ; Vol. 6, No. 9. pp. 6589-6597.
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abstract = "We characterized the electrical properties of a field-effect transistor (FET) and a nonvolatile memory device based on a solution-processable low bandgap small molecule, Si1TDPP-EE-C6. The small molecule consisted of electron-rich thiophene-dithienosilole-thiophene (Si1T) units and electron-deficient diketopyrrolopyrrole (DPP) units. The as-spun Si1TDPP-EE-C6 FET device exhibited ambipolar transport properties with a hole mobility of 7.3 × 10-5 cm2/(V s) and an electron mobility of 1.6 × 10-5 cm2/(V s). Thermal annealing at 110 °C led to a significant increase in carrier mobility, with hole and electron mobilities of 3.7 × 10-3 and 5.1 × 10-4 cm2/(Vs), respectively. This improvement is strongly correlated with the increased film crystallinity and reduced π-π intermolecular stacking distance upon thermal annealing, revealed by grazing incidence X-ray diffraction (GIXD) and atomic force microscopy (AFM) measurements. In addition, nonvolatile memory devices based on Si1TDPP-EE-C6 were successfully fabricated by incorporating Au nanoparticles (AuNPs) as charge trapping sites at the interface between the silicon oxide (SiO2) and cross-linked poly(4-vinylphenol) (cPVP) dielectrics. The device exhibited reliable nonvolatile memory characteristics, including a wide memory window of 98 V, a high on/off-current ratio of 1 × 103, and good electrical reliability. Overall, we demonstrate that donor-Acceptor-type small molecules are a potentially important class of materials for ambipolar FETs and nonvolatile memory applications.",
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High crystalline dithienosilole-cored small molecule semiconductor for ambipolar transistor and nonvolatile memory. / Kang, Woonggi; Jung, Minwoo; Cha, Wonsuk; Jang, Sukjae; Yoon, Youngwoon; Kim, Hyunjung; Son, Hae Jung; Lee, Doh Kwon; Kim, Bongsoo; Cho, Jeong Ho.

In: ACS Applied Materials and Interfaces, Vol. 6, No. 9, 14.05.2014, p. 6589-6597.

Research output: Contribution to journalArticle

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AU - Kang, Woonggi

AU - Jung, Minwoo

AU - Cha, Wonsuk

AU - Jang, Sukjae

AU - Yoon, Youngwoon

AU - Kim, Hyunjung

AU - Son, Hae Jung

AU - Lee, Doh Kwon

AU - Kim, Bongsoo

AU - Cho, Jeong Ho

PY - 2014/5/14

Y1 - 2014/5/14

N2 - We characterized the electrical properties of a field-effect transistor (FET) and a nonvolatile memory device based on a solution-processable low bandgap small molecule, Si1TDPP-EE-C6. The small molecule consisted of electron-rich thiophene-dithienosilole-thiophene (Si1T) units and electron-deficient diketopyrrolopyrrole (DPP) units. The as-spun Si1TDPP-EE-C6 FET device exhibited ambipolar transport properties with a hole mobility of 7.3 × 10-5 cm2/(V s) and an electron mobility of 1.6 × 10-5 cm2/(V s). Thermal annealing at 110 °C led to a significant increase in carrier mobility, with hole and electron mobilities of 3.7 × 10-3 and 5.1 × 10-4 cm2/(Vs), respectively. This improvement is strongly correlated with the increased film crystallinity and reduced π-π intermolecular stacking distance upon thermal annealing, revealed by grazing incidence X-ray diffraction (GIXD) and atomic force microscopy (AFM) measurements. In addition, nonvolatile memory devices based on Si1TDPP-EE-C6 were successfully fabricated by incorporating Au nanoparticles (AuNPs) as charge trapping sites at the interface between the silicon oxide (SiO2) and cross-linked poly(4-vinylphenol) (cPVP) dielectrics. The device exhibited reliable nonvolatile memory characteristics, including a wide memory window of 98 V, a high on/off-current ratio of 1 × 103, and good electrical reliability. Overall, we demonstrate that donor-Acceptor-type small molecules are a potentially important class of materials for ambipolar FETs and nonvolatile memory applications.

AB - We characterized the electrical properties of a field-effect transistor (FET) and a nonvolatile memory device based on a solution-processable low bandgap small molecule, Si1TDPP-EE-C6. The small molecule consisted of electron-rich thiophene-dithienosilole-thiophene (Si1T) units and electron-deficient diketopyrrolopyrrole (DPP) units. The as-spun Si1TDPP-EE-C6 FET device exhibited ambipolar transport properties with a hole mobility of 7.3 × 10-5 cm2/(V s) and an electron mobility of 1.6 × 10-5 cm2/(V s). Thermal annealing at 110 °C led to a significant increase in carrier mobility, with hole and electron mobilities of 3.7 × 10-3 and 5.1 × 10-4 cm2/(Vs), respectively. This improvement is strongly correlated with the increased film crystallinity and reduced π-π intermolecular stacking distance upon thermal annealing, revealed by grazing incidence X-ray diffraction (GIXD) and atomic force microscopy (AFM) measurements. In addition, nonvolatile memory devices based on Si1TDPP-EE-C6 were successfully fabricated by incorporating Au nanoparticles (AuNPs) as charge trapping sites at the interface between the silicon oxide (SiO2) and cross-linked poly(4-vinylphenol) (cPVP) dielectrics. The device exhibited reliable nonvolatile memory characteristics, including a wide memory window of 98 V, a high on/off-current ratio of 1 × 103, and good electrical reliability. Overall, we demonstrate that donor-Acceptor-type small molecules are a potentially important class of materials for ambipolar FETs and nonvolatile memory applications.

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