High current fast switching n-ZnO/p-Si diode

Young Choi, Kimoon Lee, C. H. Park, Kwang H. Lee, Jae Woo Nam, Myung M. Sung, Kyu Min Lee, Hyun Chul Sohn, Seongil Im

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26 Citations (Scopus)

Abstract

The authors report on the high current density n-ZnO/p-Si heterojunction diode that has been fabricated by atomic layer deposition (ALD) of 70 nm thin ZnO on a p-Si substrate. While the diode was formed at four different ALD temperatures of 80, 100, 150 and 200 °C, the 100 °C processed diode showed an optimal behaviour of an on-off ratio over 3.3 × 103 and a high forward current density, ∼300A cm-2 at 3V. Although the highest film conductance appeared from the 200 °C deposited ZnO layer, nanometre thin SiOx was also revealed at the ZnO/p-Si interface; it might cause a high reverse leakage current level. Our high current density diode also demonstrates a fast switching performance without any reverse recovery delay, which is often observed at a usual Si p-n diode.

Original languageEnglish
Article number345101
JournalJournal of Physics D: Applied Physics
Volume43
Issue number34
DOIs
Publication statusPublished - 2010 Sep 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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  • Cite this

    Choi, Y., Lee, K., Park, C. H., Lee, K. H., Nam, J. W., Sung, M. M., Lee, K. M., Sohn, H. C., & Im, S. (2010). High current fast switching n-ZnO/p-Si diode. Journal of Physics D: Applied Physics, 43(34), [345101]. https://doi.org/10.1088/0022-3727/43/34/345101