High-density low-power-operating DRAM device adopting 6F2 cell scheme with novel S-RCAT structure on 80nm feature size and beyond

H. J. Oh, J. Y. Kim, J. H. Kim, S. G. Park, D. H. Kim, S. E. Kim, D. S. Woo, Y. S. Lee, G. W. Ha, J. M. Park, N. J. Kang, H. J. Kim, Y. S. Hwang, B. Y. Kim, D. I. Kim, Y. S. Cho, J. K. Choi, B. H. Lee, S. B. Kim, M. H. ChoY. I. Kim, J. Choi, D. W. Shin, M. S. Shim, W. T. Choi, G. P. Lee, Y. J. Park, W. S. Lee, B. I. Ryu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

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Engineering & Materials Science