High efficiency n-Si/p-Cu2O core-shell nanowires photodiode prepared by atomic layer deposition of Cu2O on well-ordered Si nanowires array

Hangil Kim, Soo Hyun Kim, Kyung Yong Ko, Hyungjun Kim, Jaehoon Kim, Jihun Oh, Han Bo Ram Lee

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13 Citations (Scopus)


A highly efficient n-Si/p-Cu2O core-shell (C-S) nanowire (NW) photodiode was fabricated using Cu2O grown by atomic layer deposition (ALD) on a well-ordered Si NW array. Ordered Si nanowires arrays were fabricated by nano-sphere lithography to pattern metal catalysts for the metal-assisted etching of silicon, resulting in a Si NW arrays with a good arrangement, smooth surface and small diameter distribution. The ALD-Cu2O thin films were grown using a new non-fluorinated Cu precursor, bis(1-dimethylamino-2-methyl-2-butoxy)copper (C14H32N2O2Cu), and water vapor (H2O) at 140°C. Transmission electron microscopy equipped with an energy dispersive spectrometer confirmed that p-Cu2O thin films had been coated over arrayed Si NWs with a diameter of 150 nm (aspect ratio of ∼7.6). The C-S NW photodiode exhibited more sensitive photodetection performance under ultraviolet illumination as well as an enhanced photocurrent density in the forward biasing region than the planar structure diode. The superior performance of C-S NWs photodiode was explained by the lower reflectance of light and the effective carrier separation and collection originating from the C-S NWs structure. [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)404-410
Number of pages7
JournalElectronic Materials Letters
Issue number3
Publication statusPublished - 2016 May 1

Bibliographical note

Publisher Copyright:
© 2016, The Korean Institute of Metals and Materials and Springer Science+Business Media Dordrecht.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials


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