High efficiency n-Si/p-Cu2O core-shell nanowires photodiode prepared by atomic layer deposition of Cu2O on well-ordered Si nanowires array

Hangil Kim, Soo Hyun Kim, Kyung Yong Ko, Hyungjun Kim, Jaehoon Kim, Jihun Oh, Han Bo Ram Lee

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A highly efficient n-Si/p-Cu2O core-shell (C-S) nanowire (NW) photodiode was fabricated using Cu2O grown by atomic layer deposition (ALD) on a well-ordered Si NW array. Ordered Si nanowires arrays were fabricated by nano-sphere lithography to pattern metal catalysts for the metal-assisted etching of silicon, resulting in a Si NW arrays with a good arrangement, smooth surface and small diameter distribution. The ALD-Cu2O thin films were grown using a new non-fluorinated Cu precursor, bis(1-dimethylamino-2-methyl-2-butoxy)copper (C14H32N2O2Cu), and water vapor (H2O) at 140°C. Transmission electron microscopy equipped with an energy dispersive spectrometer confirmed that p-Cu2O thin films had been coated over arrayed Si NWs with a diameter of 150 nm (aspect ratio of ∼7.6). The C-S NW photodiode exhibited more sensitive photodetection performance under ultraviolet illumination as well as an enhanced photocurrent density in the forward biasing region than the planar structure diode. The superior performance of C-S NWs photodiode was explained by the lower reflectance of light and the effective carrier separation and collection originating from the C-S NWs structure. [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)404-410
Number of pages7
JournalElectronic Materials Letters
Volume12
Issue number3
DOIs
Publication statusPublished - 2016 May 1

Fingerprint

Atomic layer deposition
Photodiodes
Nanowires
Metals
Thin films
Steam
Silicon
Photocurrents
Water vapor
Lithography
Spectrometers
Aspect ratio
Copper
Etching
Diodes
Lighting
Transmission electron microscopy
Catalysts

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Kim, Hangil ; Kim, Soo Hyun ; Ko, Kyung Yong ; Kim, Hyungjun ; Kim, Jaehoon ; Oh, Jihun ; Lee, Han Bo Ram. / High efficiency n-Si/p-Cu2O core-shell nanowires photodiode prepared by atomic layer deposition of Cu2O on well-ordered Si nanowires array. In: Electronic Materials Letters. 2016 ; Vol. 12, No. 3. pp. 404-410.
@article{4dcf48af8e574386a9d10bd00e9774ec,
title = "High efficiency n-Si/p-Cu2O core-shell nanowires photodiode prepared by atomic layer deposition of Cu2O on well-ordered Si nanowires array",
abstract = "A highly efficient n-Si/p-Cu2O core-shell (C-S) nanowire (NW) photodiode was fabricated using Cu2O grown by atomic layer deposition (ALD) on a well-ordered Si NW array. Ordered Si nanowires arrays were fabricated by nano-sphere lithography to pattern metal catalysts for the metal-assisted etching of silicon, resulting in a Si NW arrays with a good arrangement, smooth surface and small diameter distribution. The ALD-Cu2O thin films were grown using a new non-fluorinated Cu precursor, bis(1-dimethylamino-2-methyl-2-butoxy)copper (C14H32N2O2Cu), and water vapor (H2O) at 140°C. Transmission electron microscopy equipped with an energy dispersive spectrometer confirmed that p-Cu2O thin films had been coated over arrayed Si NWs with a diameter of 150 nm (aspect ratio of ∼7.6). The C-S NW photodiode exhibited more sensitive photodetection performance under ultraviolet illumination as well as an enhanced photocurrent density in the forward biasing region than the planar structure diode. The superior performance of C-S NWs photodiode was explained by the lower reflectance of light and the effective carrier separation and collection originating from the C-S NWs structure. [Figure not available: see fulltext.]",
author = "Hangil Kim and Kim, {Soo Hyun} and Ko, {Kyung Yong} and Hyungjun Kim and Jaehoon Kim and Jihun Oh and Lee, {Han Bo Ram}",
year = "2016",
month = "5",
day = "1",
doi = "10.1007/s13391-016-5356-2",
language = "English",
volume = "12",
pages = "404--410",
journal = "Electronic Materials Letters",
issn = "1738-8090",
publisher = "Springer Netherlands",
number = "3",

}

High efficiency n-Si/p-Cu2O core-shell nanowires photodiode prepared by atomic layer deposition of Cu2O on well-ordered Si nanowires array. / Kim, Hangil; Kim, Soo Hyun; Ko, Kyung Yong; Kim, Hyungjun; Kim, Jaehoon; Oh, Jihun; Lee, Han Bo Ram.

In: Electronic Materials Letters, Vol. 12, No. 3, 01.05.2016, p. 404-410.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High efficiency n-Si/p-Cu2O core-shell nanowires photodiode prepared by atomic layer deposition of Cu2O on well-ordered Si nanowires array

AU - Kim, Hangil

AU - Kim, Soo Hyun

AU - Ko, Kyung Yong

AU - Kim, Hyungjun

AU - Kim, Jaehoon

AU - Oh, Jihun

AU - Lee, Han Bo Ram

PY - 2016/5/1

Y1 - 2016/5/1

N2 - A highly efficient n-Si/p-Cu2O core-shell (C-S) nanowire (NW) photodiode was fabricated using Cu2O grown by atomic layer deposition (ALD) on a well-ordered Si NW array. Ordered Si nanowires arrays were fabricated by nano-sphere lithography to pattern metal catalysts for the metal-assisted etching of silicon, resulting in a Si NW arrays with a good arrangement, smooth surface and small diameter distribution. The ALD-Cu2O thin films were grown using a new non-fluorinated Cu precursor, bis(1-dimethylamino-2-methyl-2-butoxy)copper (C14H32N2O2Cu), and water vapor (H2O) at 140°C. Transmission electron microscopy equipped with an energy dispersive spectrometer confirmed that p-Cu2O thin films had been coated over arrayed Si NWs with a diameter of 150 nm (aspect ratio of ∼7.6). The C-S NW photodiode exhibited more sensitive photodetection performance under ultraviolet illumination as well as an enhanced photocurrent density in the forward biasing region than the planar structure diode. The superior performance of C-S NWs photodiode was explained by the lower reflectance of light and the effective carrier separation and collection originating from the C-S NWs structure. [Figure not available: see fulltext.]

AB - A highly efficient n-Si/p-Cu2O core-shell (C-S) nanowire (NW) photodiode was fabricated using Cu2O grown by atomic layer deposition (ALD) on a well-ordered Si NW array. Ordered Si nanowires arrays were fabricated by nano-sphere lithography to pattern metal catalysts for the metal-assisted etching of silicon, resulting in a Si NW arrays with a good arrangement, smooth surface and small diameter distribution. The ALD-Cu2O thin films were grown using a new non-fluorinated Cu precursor, bis(1-dimethylamino-2-methyl-2-butoxy)copper (C14H32N2O2Cu), and water vapor (H2O) at 140°C. Transmission electron microscopy equipped with an energy dispersive spectrometer confirmed that p-Cu2O thin films had been coated over arrayed Si NWs with a diameter of 150 nm (aspect ratio of ∼7.6). The C-S NW photodiode exhibited more sensitive photodetection performance under ultraviolet illumination as well as an enhanced photocurrent density in the forward biasing region than the planar structure diode. The superior performance of C-S NWs photodiode was explained by the lower reflectance of light and the effective carrier separation and collection originating from the C-S NWs structure. [Figure not available: see fulltext.]

UR - http://www.scopus.com/inward/record.url?scp=84964701677&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84964701677&partnerID=8YFLogxK

U2 - 10.1007/s13391-016-5356-2

DO - 10.1007/s13391-016-5356-2

M3 - Article

VL - 12

SP - 404

EP - 410

JO - Electronic Materials Letters

JF - Electronic Materials Letters

SN - 1738-8090

IS - 3

ER -