High efficiency n-ZnO/p-Si core-shell nanowire photodiode based on well-ordered Si nanowire array with smooth surface

Kyung Yong Ko, Hyemin Kang, Jungkil Kim, Woo Lee, Hee Sung Lee, Seongil Im, Ji Yeon Kang, Jae Min Myoung, Han Gil Kim, Soo Hyun Kim, Hyungjun Kim

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

A highly efficient n-ZnO/p-Si core-shell nanowire (NW) photodiode was fabricated using ZnO grown by atomic layer deposition (ALD) on a well-ordered Si NW array. Si NW arrays were prepared by metal-assisted chemical etching, for which a metal mesh with a well-organized nanohole array was made using anodic aluminum oxide. This resulted in a good arrangement, smooth surface, and small diameter distribution of the Si NW array. Consequently, ZnO layers with various thicknesses from 15 to 30 nm were deposited by the ALD method. Because of the smooth surface of the well-ordered Si NWs yielding low surface roughness scattering, the resulting photodiode showed significantly improved device characteristics.

Original languageEnglish
Pages (from-to)297-302
Number of pages6
JournalMaterials Science in Semiconductor Processing
Volume27
Issue number1
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Photodiodes
Nanowires
photodiodes
nanowires
Atomic layer deposition
atomic layer epitaxy
Metals
Aluminum Oxide
metals
mesh
Etching
surface roughness
aluminum oxides
Surface roughness
etching
Scattering
Aluminum
Oxides
scattering

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ko, Kyung Yong ; Kang, Hyemin ; Kim, Jungkil ; Lee, Woo ; Lee, Hee Sung ; Im, Seongil ; Kang, Ji Yeon ; Myoung, Jae Min ; Kim, Han Gil ; Kim, Soo Hyun ; Kim, Hyungjun. / High efficiency n-ZnO/p-Si core-shell nanowire photodiode based on well-ordered Si nanowire array with smooth surface. In: Materials Science in Semiconductor Processing. 2014 ; Vol. 27, No. 1. pp. 297-302.
@article{a11e54ca0d334700b1e79468a8902e7d,
title = "High efficiency n-ZnO/p-Si core-shell nanowire photodiode based on well-ordered Si nanowire array with smooth surface",
abstract = "A highly efficient n-ZnO/p-Si core-shell nanowire (NW) photodiode was fabricated using ZnO grown by atomic layer deposition (ALD) on a well-ordered Si NW array. Si NW arrays were prepared by metal-assisted chemical etching, for which a metal mesh with a well-organized nanohole array was made using anodic aluminum oxide. This resulted in a good arrangement, smooth surface, and small diameter distribution of the Si NW array. Consequently, ZnO layers with various thicknesses from 15 to 30 nm were deposited by the ALD method. Because of the smooth surface of the well-ordered Si NWs yielding low surface roughness scattering, the resulting photodiode showed significantly improved device characteristics.",
author = "Ko, {Kyung Yong} and Hyemin Kang and Jungkil Kim and Woo Lee and Lee, {Hee Sung} and Seongil Im and Kang, {Ji Yeon} and Myoung, {Jae Min} and Kim, {Han Gil} and Kim, {Soo Hyun} and Hyungjun Kim",
year = "2014",
month = "1",
day = "1",
doi = "10.1016/j.mssp.2014.07.012",
language = "English",
volume = "27",
pages = "297--302",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier Limited",
number = "1",

}

High efficiency n-ZnO/p-Si core-shell nanowire photodiode based on well-ordered Si nanowire array with smooth surface. / Ko, Kyung Yong; Kang, Hyemin; Kim, Jungkil; Lee, Woo; Lee, Hee Sung; Im, Seongil; Kang, Ji Yeon; Myoung, Jae Min; Kim, Han Gil; Kim, Soo Hyun; Kim, Hyungjun.

In: Materials Science in Semiconductor Processing, Vol. 27, No. 1, 01.01.2014, p. 297-302.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High efficiency n-ZnO/p-Si core-shell nanowire photodiode based on well-ordered Si nanowire array with smooth surface

AU - Ko, Kyung Yong

AU - Kang, Hyemin

AU - Kim, Jungkil

AU - Lee, Woo

AU - Lee, Hee Sung

AU - Im, Seongil

AU - Kang, Ji Yeon

AU - Myoung, Jae Min

AU - Kim, Han Gil

AU - Kim, Soo Hyun

AU - Kim, Hyungjun

PY - 2014/1/1

Y1 - 2014/1/1

N2 - A highly efficient n-ZnO/p-Si core-shell nanowire (NW) photodiode was fabricated using ZnO grown by atomic layer deposition (ALD) on a well-ordered Si NW array. Si NW arrays were prepared by metal-assisted chemical etching, for which a metal mesh with a well-organized nanohole array was made using anodic aluminum oxide. This resulted in a good arrangement, smooth surface, and small diameter distribution of the Si NW array. Consequently, ZnO layers with various thicknesses from 15 to 30 nm were deposited by the ALD method. Because of the smooth surface of the well-ordered Si NWs yielding low surface roughness scattering, the resulting photodiode showed significantly improved device characteristics.

AB - A highly efficient n-ZnO/p-Si core-shell nanowire (NW) photodiode was fabricated using ZnO grown by atomic layer deposition (ALD) on a well-ordered Si NW array. Si NW arrays were prepared by metal-assisted chemical etching, for which a metal mesh with a well-organized nanohole array was made using anodic aluminum oxide. This resulted in a good arrangement, smooth surface, and small diameter distribution of the Si NW array. Consequently, ZnO layers with various thicknesses from 15 to 30 nm were deposited by the ALD method. Because of the smooth surface of the well-ordered Si NWs yielding low surface roughness scattering, the resulting photodiode showed significantly improved device characteristics.

UR - http://www.scopus.com/inward/record.url?scp=84905047960&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84905047960&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2014.07.012

DO - 10.1016/j.mssp.2014.07.012

M3 - Article

VL - 27

SP - 297

EP - 302

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

IS - 1

ER -