High-efficiency performance of microwave power 4H-SiC amplifiers

M. W. Shin, T. J. Kordas, R. J. Trew

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The high frequency performance of a 4H-SiC MESFET is examined using an advanced harmonic-balance device/circuit simulator combined with the two-dimensional device simulator PISCES-IIB. Very good agreement with experimental experimental measurements is achieved. Circuit and device optimizations are discussed. An improved device structure with a maximum power added efficiency approaching the theoretical limit is predicted.

Original languageEnglish
Title of host publicationIEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)
Pages497-500
Number of pages4
Publication statusPublished - 1995 Jan 1
EventProceedings of the 1995 IEEE International Symposium on Power Semicomductor Devices and ICs - Yokohama, Jpn
Duration: 1995 May 231995 May 25

Other

OtherProceedings of the 1995 IEEE International Symposium on Power Semicomductor Devices and ICs
CityYokohama, Jpn
Period95/5/2395/5/25

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Shin, M. W., Kordas, T. J., & Trew, R. J. (1995). High-efficiency performance of microwave power 4H-SiC amplifiers. In IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD) (pp. 497-500)