High electrical performance of wet-processed indium zinc oxide thin-film transistors

Kyung Bae Park, Jong Baek Seon, Gun Hee Kim, Mino Yang, Bonwon Koo, Hyun Jae Kim, Myung Kwan Ryu, Sang Yoon Lee

Research output: Contribution to journalArticle

69 Citations (Scopus)

Abstract

We developed thin-film transistors (TFTs) that use solution-processed amorphous indium zinc oxide for the channels in an all-photolithographic process. The transistors, which operate in depletion mode, have excellent transfer characteristics, including saturation mobility of 6.57 cm2/ V.s, threshold voltages of-0.30 V, turn-on voltages of-1.50 V, on/off ratios of 109, and inverse subthreshold slopes of 0.15 V/dec. We measured the time, temperature, gate voltage, and drain-voltage dependence of the threshold voltage shift, which was 2.16 V under stress conditions. This is nearly the same as that of conventional amorphous silicon TFTs.

Original languageEnglish
Article number21
Pages (from-to)311-313
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number4
DOIs
Publication statusPublished - 2010 Apr 1

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Zinc Oxide
Indium
Thin film transistors
Zinc oxide
Oxide films
Threshold voltage
Electric potential
Amorphous silicon
Transistors
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Park, Kyung Bae ; Seon, Jong Baek ; Kim, Gun Hee ; Yang, Mino ; Koo, Bonwon ; Kim, Hyun Jae ; Ryu, Myung Kwan ; Lee, Sang Yoon. / High electrical performance of wet-processed indium zinc oxide thin-film transistors. In: IEEE Electron Device Letters. 2010 ; Vol. 31, No. 4. pp. 311-313.
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Park, KB, Seon, JB, Kim, GH, Yang, M, Koo, B, Kim, HJ, Ryu, MK & Lee, SY 2010, 'High electrical performance of wet-processed indium zinc oxide thin-film transistors', IEEE Electron Device Letters, vol. 31, no. 4, 21, pp. 311-313. https://doi.org/10.1109/LED.2010.2040130

High electrical performance of wet-processed indium zinc oxide thin-film transistors. / Park, Kyung Bae; Seon, Jong Baek; Kim, Gun Hee; Yang, Mino; Koo, Bonwon; Kim, Hyun Jae; Ryu, Myung Kwan; Lee, Sang Yoon.

In: IEEE Electron Device Letters, Vol. 31, No. 4, 21, 01.04.2010, p. 311-313.

Research output: Contribution to journalArticle

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