High electrical performance of wet-processed indium zinc oxide thin-film transistors

Kyung Bae Park, Jong Baek Seon, Gun Hee Kim, Mino Yang, Bonwon Koo, Hyun Jae Kim, Myung Kwan Ryu, Sang Yoon Lee

Research output: Contribution to journalArticlepeer-review

73 Citations (Scopus)

Abstract

We developed thin-film transistors (TFTs) that use solution-processed amorphous indium zinc oxide for the channels in an all-photolithographic process. The transistors, which operate in depletion mode, have excellent transfer characteristics, including saturation mobility of 6.57 cm2/ V.s, threshold voltages of-0.30 V, turn-on voltages of-1.50 V, on/off ratios of 109, and inverse subthreshold slopes of 0.15 V/dec. We measured the time, temperature, gate voltage, and drain-voltage dependence of the threshold voltage shift, which was 2.16 V under stress conditions. This is nearly the same as that of conventional amorphous silicon TFTs.

Original languageEnglish
Article number21
Pages (from-to)311-313
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number4
DOIs
Publication statusPublished - 2010 Apr

Bibliographical note

Funding Information:
Manuscript received November 2, 2009; revised December 14, 2009. First published February 17, 2010; current version published March 24, 2010. This work was supported in part by the research project of Samsung Advanced Institute of Technology. The review of this letter was arranged by Editor J. K. O. Sin.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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