High electrical performance of wet-processed indium zinc oxide thin-film transistors

Kyung Bae Park, Jong Baek Seon, Gun Hee Kim, Mino Yang, Bonwon Koo, Hyun Jae Kim, Myung Kwan Ryu, Sang Yoon Lee

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Abstract

We developed thin-film transistors (TFTs) that use solution-processed amorphous indium zinc oxide for the channels in an all-photolithographic process. The transistors, which operate in depletion mode, have excellent transfer characteristics, including saturation mobility of 6.57 cm2/ V.s, threshold voltages of-0.30 V, turn-on voltages of-1.50 V, on/off ratios of 109, and inverse subthreshold slopes of 0.15 V/dec. We measured the time, temperature, gate voltage, and drain-voltage dependence of the threshold voltage shift, which was 2.16 V under stress conditions. This is nearly the same as that of conventional amorphous silicon TFTs.

Original languageEnglish
Article number21
Pages (from-to)311-313
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number4
DOIs
Publication statusPublished - 2010 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Park, K. B., Seon, J. B., Kim, G. H., Yang, M., Koo, B., Kim, H. J., Ryu, M. K., & Lee, S. Y. (2010). High electrical performance of wet-processed indium zinc oxide thin-film transistors. IEEE Electron Device Letters, 31(4), 311-313. [21]. https://doi.org/10.1109/LED.2010.2040130