High-energy proton irradiation damage on two-dimensional hexagonal boron nitride

Dongryul Lee, Sanghyuk Yoo, Jinho Bae, Hyunik Park, Keonwook Kang, Jihyun Kim

Research output: Contribution to journalArticle

Abstract

The dielectric layer, which is an essential building block in electronic device circuitry, is subject to intrinsic or induced defects that limit its performance. Nano-layers of hexagonal boron nitride (h-BN) represent a promising dielectric layer in nano-electronics owing to its excellent electronic and thermal properties. In order to further analyze this technology, two-dimensional (2D) h-BN dielectric layers were exposed to high-energy proton irradiation at various proton energies and doses to intentionally introduce defective sites. A pristine h-BN capacitor showed typical degradation stages with a hard breakdown field of 10.3 MV cm-1, while h-BN capacitors irradiated at proton energies of 5 and 10 MeV at a dose of 1 × 1013 cm-2 showed lower hard breakdown fields of 1.6 and 8.3 MV cm-1, respectively. Higher leakage currents were observed under higher proton doses at 5 × 1013 cm-2, resulting in lower breakdown fields. The degradation stages of proton-irradiated h-BN are similar to those of defective silicon dioxide. The degradation of the h-BN dielectric after proton irradiation is attributed to Frenkel defects created by the high-energy protons, as indicated by the molecular dynamics simulation. Understanding the defect-induced degradation mechanism of h-BN nano-layers can improve their reliability, paving the way to the implementation of 2D h-BN in advanced micro- and nano-electronics.

Original languageEnglish
Pages (from-to)18326-18332
Number of pages7
JournalRSC Advances
Volume9
Issue number32
DOIs
Publication statusPublished - 2019 Jan 1

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Proton irradiation
Boron nitride
Protons
Degradation
Nanoelectronics
Defects
Capacitors
boron nitride
Microelectronics
Leakage currents
Silicon Dioxide
Electronic properties
Dosimetry
Molecular dynamics
Thermodynamic properties
Silica
Computer simulation

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)

Cite this

Lee, Dongryul ; Yoo, Sanghyuk ; Bae, Jinho ; Park, Hyunik ; Kang, Keonwook ; Kim, Jihyun. / High-energy proton irradiation damage on two-dimensional hexagonal boron nitride. In: RSC Advances. 2019 ; Vol. 9, No. 32. pp. 18326-18332.
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High-energy proton irradiation damage on two-dimensional hexagonal boron nitride. / Lee, Dongryul; Yoo, Sanghyuk; Bae, Jinho; Park, Hyunik; Kang, Keonwook; Kim, Jihyun.

In: RSC Advances, Vol. 9, No. 32, 01.01.2019, p. 18326-18332.

Research output: Contribution to journalArticle

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