High-gain pentacene-based inverter achieved through high and low energy ultraviolet treatments

Jeong M. Choi, Jae Hoon Kim, Seongil Im

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The authors report on the fabrication of pentacene-based inverter with two p -channel thin-film transistors (TFTs) on polymerAl Ox bilayer dielectric, which has been patterned by high energy ultraviolet (UV) (254 nm) illumination. After pentacene channel growth on the dielectric, the inverter showed a high voltage gain of ∼10 under -6 V supply voltage (VDD) but at a transition voltage of -1 V which is too marginal to guarantee a desirable inverter operation between 0 and -6 V. When low energy UV (352 nm) was applied onto one of the two p TFTs, which plays as a load in the inverter circuit, the transition voltage shifted to an adequate value (-3 V) because the UV changes the threshold voltage of the load TFT to be lower. The UV-treated inverter demonstrated a high voltage gain of ∼150 under a VDD of -30 V.

Original languageEnglish
Article number083504
JournalApplied Physics Letters
Volume91
Issue number8
DOIs
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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