High- k and low- k nanocomposite gate dielectrics for low voltage organic thin film transistors

Chang Su Kim, Sung Jin Jo, Sung Won Lee, Woo Jin Kim, Hong Koo Baik, Se Jong Lee, D. K. Hwang, Seongil Im

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

Ce O2 -Si O2 nanocomposite films were used as the gate dielectrics in organic thin film transistors (OTFTs) with pentacene active semiconductor. Ce O2 -Si O2 composite films exhibited a high dielectric capacitance of 57 nF cm2 with exceptionally low leakage current. Good device characteristics were obtained with saturation at low operating voltages (∼2 V) and with a field effect mobility of 0.84 cm2 V-1 s-1, a threshold voltage of ∼0.25 V, an on/off current ratio of 103, and a subthreshold slope of 0.3 Vdecade, whereas the gate leakage current density is considerably lowered. These results should therefore increase the prospects of using OTFTs in low power applications such as portable devices.

Original languageEnglish
Article number243515
JournalApplied Physics Letters
Volume88
Issue number24
DOIs
Publication statusPublished - 2006 Jun 12

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low voltage
nanocomposites
leakage
transistors
thin films
threshold voltage
capacitance
current density
slopes
saturation
composite materials
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, Chang Su ; Jo, Sung Jin ; Lee, Sung Won ; Kim, Woo Jin ; Baik, Hong Koo ; Lee, Se Jong ; Hwang, D. K. ; Im, Seongil. / High- k and low- k nanocomposite gate dielectrics for low voltage organic thin film transistors. In: Applied Physics Letters. 2006 ; Vol. 88, No. 24.
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abstract = "Ce O2 -Si O2 nanocomposite films were used as the gate dielectrics in organic thin film transistors (OTFTs) with pentacene active semiconductor. Ce O2 -Si O2 composite films exhibited a high dielectric capacitance of 57 nF cm2 with exceptionally low leakage current. Good device characteristics were obtained with saturation at low operating voltages (∼2 V) and with a field effect mobility of 0.84 cm2 V-1 s-1, a threshold voltage of ∼0.25 V, an on/off current ratio of 103, and a subthreshold slope of 0.3 Vdecade, whereas the gate leakage current density is considerably lowered. These results should therefore increase the prospects of using OTFTs in low power applications such as portable devices.",
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High- k and low- k nanocomposite gate dielectrics for low voltage organic thin film transistors. / Kim, Chang Su; Jo, Sung Jin; Lee, Sung Won; Kim, Woo Jin; Baik, Hong Koo; Lee, Se Jong; Hwang, D. K.; Im, Seongil.

In: Applied Physics Letters, Vol. 88, No. 24, 243515, 12.06.2006.

Research output: Contribution to journalArticle

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AU - Jo, Sung Jin

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AU - Lee, Se Jong

AU - Hwang, D. K.

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AB - Ce O2 -Si O2 nanocomposite films were used as the gate dielectrics in organic thin film transistors (OTFTs) with pentacene active semiconductor. Ce O2 -Si O2 composite films exhibited a high dielectric capacitance of 57 nF cm2 with exceptionally low leakage current. Good device characteristics were obtained with saturation at low operating voltages (∼2 V) and with a field effect mobility of 0.84 cm2 V-1 s-1, a threshold voltage of ∼0.25 V, an on/off current ratio of 103, and a subthreshold slope of 0.3 Vdecade, whereas the gate leakage current density is considerably lowered. These results should therefore increase the prospects of using OTFTs in low power applications such as portable devices.

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