High-k nanomixed HfxAlyOz film capacitors grown on Ru metal electrodes by atomic layer deposition

Nak Jin Seong, Soon Gil Yoon, Seung Jin Yeom, Hyun Kyung Woo, Deok Sin Kil, Jae Sung Roh, Hyun Chul Sohn

Research output: Contribution to journalArticle

Abstract

The HfxAlyOz nanomixed films were deposited at 300°C on Ru/TiN/Ti/SiO2/Si substrates using an atomic layer deposition and the electrical properties of Ru/Hf xAlyOz/Ru capacitors were investigated as a function of a film thickness and rapid thermal annealing temperature. The dielectric constant, dielectric loss, and leakage current density at 1.0 V in the films of 7 nm thickness were approximately 16, 0.9%, and 1 × 10 -6 A/cm2, respectively. The capacitors exhibit the stable electrical properties in a thermal treatment up to 800°C. The Ru/Hf xAlyOz/Ru capacitors with an equivalent oxide thickness of 11Å in film thickness of 6 nm are possible to apply for 70 nm generation dynamic random access memory application.

Original languageEnglish
Pages (from-to)F40-F42
JournalElectrochemical and Solid-State Letters
Volume8
Issue number10
DOIs
Publication statusPublished - 2005 Oct 7

Fingerprint

Atomic layer deposition
atomic layer epitaxy
capacitors
Capacitors
Metals
Electrodes
electrodes
Film thickness
Electric properties
film thickness
electrical properties
metals
Rapid thermal annealing
random access memory
Dielectric losses
dielectric loss
Leakage currents
Oxides
leakage
Permittivity

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Seong, Nak Jin ; Yoon, Soon Gil ; Yeom, Seung Jin ; Woo, Hyun Kyung ; Kil, Deok Sin ; Roh, Jae Sung ; Sohn, Hyun Chul. / High-k nanomixed HfxAlyOz film capacitors grown on Ru metal electrodes by atomic layer deposition. In: Electrochemical and Solid-State Letters. 2005 ; Vol. 8, No. 10. pp. F40-F42.
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abstract = "The HfxAlyOz nanomixed films were deposited at 300°C on Ru/TiN/Ti/SiO2/Si substrates using an atomic layer deposition and the electrical properties of Ru/Hf xAlyOz/Ru capacitors were investigated as a function of a film thickness and rapid thermal annealing temperature. The dielectric constant, dielectric loss, and leakage current density at 1.0 V in the films of 7 nm thickness were approximately 16, 0.9{\%}, and 1 × 10 -6 A/cm2, respectively. The capacitors exhibit the stable electrical properties in a thermal treatment up to 800°C. The Ru/Hf xAlyOz/Ru capacitors with an equivalent oxide thickness of 11{\AA} in film thickness of 6 nm are possible to apply for 70 nm generation dynamic random access memory application.",
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High-k nanomixed HfxAlyOz film capacitors grown on Ru metal electrodes by atomic layer deposition. / Seong, Nak Jin; Yoon, Soon Gil; Yeom, Seung Jin; Woo, Hyun Kyung; Kil, Deok Sin; Roh, Jae Sung; Sohn, Hyun Chul.

In: Electrochemical and Solid-State Letters, Vol. 8, No. 10, 07.10.2005, p. F40-F42.

Research output: Contribution to journalArticle

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AU - Yoon, Soon Gil

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