The HfxAlyOz nanomixed films were deposited at 300°C on Ru/TiN/Ti/SiO2/Si substrates using an atomic layer deposition and the electrical properties of Ru/Hf xAlyOz/Ru capacitors were investigated as a function of a film thickness and rapid thermal annealing temperature. The dielectric constant, dielectric loss, and leakage current density at 1.0 V in the films of 7 nm thickness were approximately 16, 0.9%, and 1 × 10 -6 A/cm2, respectively. The capacitors exhibit the stable electrical properties in a thermal treatment up to 800°C. The Ru/Hf xAlyOz/Ru capacitors with an equivalent oxide thickness of 11Å in film thickness of 6 nm are possible to apply for 70 nm generation dynamic random access memory application.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering