High-k nanomixed HfxAlyOz film capacitors grown on Ru metal electrodes by atomic layer deposition

Nak Jin Seong, Soon Gil Yoon, Seung Jin Yeom, Hyun Kyung Woo, Deok Sin Kil, Jae Sung Roh, Hyun Chul Sohn

Research output: Contribution to journalArticlepeer-review


The HfxAlyOz nanomixed films were deposited at 300°C on Ru/TiN/Ti/SiO2/Si substrates using an atomic layer deposition and the electrical properties of Ru/Hf xAlyOz/Ru capacitors were investigated as a function of a film thickness and rapid thermal annealing temperature. The dielectric constant, dielectric loss, and leakage current density at 1.0 V in the films of 7 nm thickness were approximately 16, 0.9%, and 1 × 10 -6 A/cm2, respectively. The capacitors exhibit the stable electrical properties in a thermal treatment up to 800°C. The Ru/Hf xAlyOz/Ru capacitors with an equivalent oxide thickness of 11Å in film thickness of 6 nm are possible to apply for 70 nm generation dynamic random access memory application.

Original languageEnglish
Pages (from-to)F40-F42
JournalElectrochemical and Solid-State Letters
Issue number10
Publication statusPublished - 2005

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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