High-k perovskite gate oxide BaHfO 3

Young Mo Kim, Chulkwon Park, Taewoo Ha, Useong Kim, Namwook Kim, Juyeon Shin, Youjung Kim, Jaejun Yu, Jae Hoon Kim, Kookrin Char

Research output: Contribution to journalArticle

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Abstract

We have investigated epitaxial BaHfO 3 as a high-k perovskite dielectric. From x-ray diffraction measurement, we confirmed the epitaxial growth of BaHfO 3 on BaSnO 3 and MgO. We measured optical and dielectric properties of the BaHfO 3 gate insulator; the optical bandgap, the dielectric constant, and the breakdown field. Furthermore, we fabricated a perovskite heterostructure field effect transistor using epitaxial BaHfO 3 as a gate insulator and La-doped BaSnO 3 as a channel layer on SrTiO 3 substrate. To reduce the threading dislocations and enhance the electrical properties of the channel, an undoped BaSnO 3 buffer layer was grown on SrTiO 3 substrates before the channel layer deposition. The device exhibited a field effect mobility value of 52.7 cm 2 V −1 s −1 , a I on /I off ratio higher than 10 7 , and a subthreshold swing value of 0.80 V dec −1 . We compare the device performances with those of other field effect transistors based on BaSnO 3 channels and different gate oxides.

Original languageEnglish
Article number016104
JournalAPL Materials
Volume5
Issue number1
DOIs
Publication statusPublished - 2017 Jan 1

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Perovskite
Oxides
Optical band gaps
High electron mobility transistors
Substrates
Buffer layers
Field effect transistors
Epitaxial growth
Dielectric properties
Electric properties
Permittivity
Optical properties
Diffraction
X rays
perovskite

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

Cite this

Kim, Y. M., Park, C., Ha, T., Kim, U., Kim, N., Shin, J., ... Char, K. (2017). High-k perovskite gate oxide BaHfO 3 APL Materials, 5(1), [016104]. https://doi.org/10.1063/1.4974864
Kim, Young Mo ; Park, Chulkwon ; Ha, Taewoo ; Kim, Useong ; Kim, Namwook ; Shin, Juyeon ; Kim, Youjung ; Yu, Jaejun ; Kim, Jae Hoon ; Char, Kookrin. / High-k perovskite gate oxide BaHfO 3 In: APL Materials. 2017 ; Vol. 5, No. 1.
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Kim, YM, Park, C, Ha, T, Kim, U, Kim, N, Shin, J, Kim, Y, Yu, J, Kim, JH & Char, K 2017, ' High-k perovskite gate oxide BaHfO 3 ', APL Materials, vol. 5, no. 1, 016104. https://doi.org/10.1063/1.4974864

High-k perovskite gate oxide BaHfO 3 . / Kim, Young Mo; Park, Chulkwon; Ha, Taewoo; Kim, Useong; Kim, Namwook; Shin, Juyeon; Kim, Youjung; Yu, Jaejun; Kim, Jae Hoon; Char, Kookrin.

In: APL Materials, Vol. 5, No. 1, 016104, 01.01.2017.

Research output: Contribution to journalArticle

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AU - Kim, Young Mo

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AU - Ha, Taewoo

AU - Kim, Useong

AU - Kim, Namwook

AU - Shin, Juyeon

AU - Kim, Youjung

AU - Yu, Jaejun

AU - Kim, Jae Hoon

AU - Char, Kookrin

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N2 - We have investigated epitaxial BaHfO 3 as a high-k perovskite dielectric. From x-ray diffraction measurement, we confirmed the epitaxial growth of BaHfO 3 on BaSnO 3 and MgO. We measured optical and dielectric properties of the BaHfO 3 gate insulator; the optical bandgap, the dielectric constant, and the breakdown field. Furthermore, we fabricated a perovskite heterostructure field effect transistor using epitaxial BaHfO 3 as a gate insulator and La-doped BaSnO 3 as a channel layer on SrTiO 3 substrate. To reduce the threading dislocations and enhance the electrical properties of the channel, an undoped BaSnO 3 buffer layer was grown on SrTiO 3 substrates before the channel layer deposition. The device exhibited a field effect mobility value of 52.7 cm 2 V −1 s −1 , a I on /I off ratio higher than 10 7 , and a subthreshold swing value of 0.80 V dec −1 . We compare the device performances with those of other field effect transistors based on BaSnO 3 channels and different gate oxides.

AB - We have investigated epitaxial BaHfO 3 as a high-k perovskite dielectric. From x-ray diffraction measurement, we confirmed the epitaxial growth of BaHfO 3 on BaSnO 3 and MgO. We measured optical and dielectric properties of the BaHfO 3 gate insulator; the optical bandgap, the dielectric constant, and the breakdown field. Furthermore, we fabricated a perovskite heterostructure field effect transistor using epitaxial BaHfO 3 as a gate insulator and La-doped BaSnO 3 as a channel layer on SrTiO 3 substrate. To reduce the threading dislocations and enhance the electrical properties of the channel, an undoped BaSnO 3 buffer layer was grown on SrTiO 3 substrates before the channel layer deposition. The device exhibited a field effect mobility value of 52.7 cm 2 V −1 s −1 , a I on /I off ratio higher than 10 7 , and a subthreshold swing value of 0.80 V dec −1 . We compare the device performances with those of other field effect transistors based on BaSnO 3 channels and different gate oxides.

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Kim YM, Park C, Ha T, Kim U, Kim N, Shin J et al. High-k perovskite gate oxide BaHfO 3 APL Materials. 2017 Jan 1;5(1). 016104. https://doi.org/10.1063/1.4974864