High-k perovskite gate oxide BaHfO3

Young Mo Kim, Chulkwon Park, Taewoo Ha, Useong Kim, Namwook Kim, Juyeon Shin, Youjung Kim, Jaejun Yu, Jae Hoon Kim, Kookrin Char

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13 Citations (Scopus)

Abstract

We have investigated epitaxial BaHfO3 as a high-k perovskite dielectric. From x-ray diffraction measurement, we confirmed the epitaxial growth of BaHfO3 on BaSnO3 and MgO. We measured optical and dielectric properties of the BaHfO3 gate insulator; the optical bandgap, the dielectric constant, and the breakdown field. Furthermore, we fabricated a perovskite heterostructure field effect transistor using epitaxial BaHfO3 as a gate insulator and La-doped BaSnO3 as a channel layer on SrTiO3 substrate. To reduce the threading dislocations and enhance the electrical properties of the channel, an undoped BaSnO3 buffer layer was grown on SrTiO3 substrates before the channel layer deposition. The device exhibited a field effect mobility value of 52.7 cm2 V−1 s−1, a Ion/Ioff ratio higher than 107, and a subthreshold swing value of 0.80 V dec−1. We compare the device performances with those of other field effect transistors based on BaSnO3 channels and different gate oxides.

Original languageEnglish
Article number016104
JournalAPL Materials
Volume5
Issue number1
DOIs
Publication statusPublished - 2017 Jan 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

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    Kim, Y. M., Park, C., Ha, T., Kim, U., Kim, N., Shin, J., Kim, Y., Yu, J., Kim, J. H., & Char, K. (2017). High-k perovskite gate oxide BaHfO3. APL Materials, 5(1), [016104]. https://doi.org/10.1063/1.4974864