High-k perovskite gate oxide BaHfO 3

Young Mo Kim, Chulkwon Park, Taewoo Ha, Useong Kim, Namwook Kim, Juyeon Shin, Youjung Kim, Jaejun Yu, Jae Hoon Kim, Kookrin Char

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We have investigated epitaxial BaHfO 3 as a high-k perovskite dielectric. From x-ray diffraction measurement, we confirmed the epitaxial growth of BaHfO 3 on BaSnO 3 and MgO. We measured optical and dielectric properties of the BaHfO 3 gate insulator; the optical bandgap, the dielectric constant, and the breakdown field. Furthermore, we fabricated a perovskite heterostructure field effect transistor using epitaxial BaHfO 3 as a gate insulator and La-doped BaSnO 3 as a channel layer on SrTiO 3 substrate. To reduce the threading dislocations and enhance the electrical properties of the channel, an undoped BaSnO 3 buffer layer was grown on SrTiO 3 substrates before the channel layer deposition. The device exhibited a field effect mobility value of 52.7 cm 2 V −1 s −1 , a I on /I off ratio higher than 10 7 , and a subthreshold swing value of 0.80 V dec −1 . We compare the device performances with those of other field effect transistors based on BaSnO 3 channels and different gate oxides.

Original languageEnglish
Article number016104
JournalAPL Materials
Issue number1
Publication statusPublished - 2017 Jan 1


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

Cite this

Kim, Y. M., Park, C., Ha, T., Kim, U., Kim, N., Shin, J., Kim, Y., Yu, J., Kim, J. H., & Char, K. (2017). High-k perovskite gate oxide BaHfO 3 APL Materials, 5(1), [016104]. https://doi.org/10.1063/1.4974864