High-k perovskite gate oxide BaHfO₃

Physics

• Perovskites 100%
• Insulators 66%
• Permittivity 66%
• Substrates 66%
• Value 66%
• Dielectrics 33%
• Field Effect 33%
• Ion 33%
• Electrical Properties 33%
• Optical Properties 33%
• Energy Gaps (Solid State) 33%
• Mobility 33%
• Deposition 33%
• Dielectric Properties 33%

Engineering

• Channel Layer 66%
• Field-Effect Transistor 66%
• Gate Oxide 66%
• Substrates 66%
• Device Performance 33%
• Buffer Layer 33%
• Breakdown Field 33%
• Heterostructures 33%
• Ray Diffraction 33%
• Threading Dislocation 33%
• High Ratio 33%

Material Science

• Buffer Layer 33%
• Dielectric Material 33%
• Epitaxy 33%
• Diffraction Measurement 33%
• Devices 33%