We report on high-k TixSi1-xO2 thin films prepared by RF magnetron co-sputtering using TiO2 and SiO2 targets at room temperature. The TixSi1-xO2 thin films exhibited an amorphous structure with nanocrystalline grains of 3-30 nm having no interfacial layers. The XPS analyses indicate that stoichiometric TiO2 phases in the TixSi1-xO2 films increased due to stronger Ti-O bond with increasing TiO2 RF powers. In addition, the electrical properties of the TixSi1-xO2 films became better with increasing TiO2 RF powers, from which the maximum value of the dielectric constant was estimated to be ∼30 for the samples with TiO2 RF powers of 200 and 250 W. The transmittance of the TixSi1-xO2 films was above 95% with optical bandgap energies of 4.1-4.2 eV. These results demonstrate a potential that the TixSi1-xO2 thin films were applied to a high-k gate dielectric in transparent thin film transistors as well as metal-oxide-semiconductor field-effect transistors.
Bibliographical noteFunding Information:
This research was supported by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center (ITRC) support program supervised by the Institute of Information Technology Assessment (IITA).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering