High-k TixSi1-xO2 thin films prepared by co-sputtering method

Sungyeon Kim, Moon Ho Ham, Byeong Yun Oh, Hyun Jae Kim, Jae Min Myoung

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report on high-k TixSi1-xO2 thin films prepared by RF magnetron co-sputtering using TiO2 and SiO2 targets at room temperature. The TixSi1-xO2 thin films exhibited an amorphous structure with nanocrystalline grains of 3-30 nm having no interfacial layers. The XPS analyses indicate that stoichiometric TiO2 phases in the TixSi1-xO2 films increased due to stronger Ti-O bond with increasing TiO2 RF powers. In addition, the electrical properties of the TixSi1-xO2 films became better with increasing TiO2 RF powers, from which the maximum value of the dielectric constant was estimated to be ∼30 for the samples with TiO2 RF powers of 200 and 250 W. The transmittance of the TixSi1-xO2 films was above 95% with optical bandgap energies of 4.1-4.2 eV. These results demonstrate a potential that the TixSi1-xO2 thin films were applied to a high-k gate dielectric in transparent thin film transistors as well as metal-oxide-semiconductor field-effect transistors.

Original languageEnglish
Pages (from-to)100-103
Number of pages4
JournalMicroelectronic Engineering
Volume85
Issue number1
DOIs
Publication statusPublished - 2008 Jan 1

Fingerprint

Sputtering
sputtering
Thin films
thin films
Gate dielectrics
Optical band gaps
MOSFET devices
Thin film transistors
Electric properties
Permittivity
X ray photoelectron spectroscopy
metal oxide semiconductors
transmittance
transistors
field effect transistors
electrical properties
permittivity
room temperature
Temperature
energy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Kim, Sungyeon ; Ham, Moon Ho ; Oh, Byeong Yun ; Kim, Hyun Jae ; Myoung, Jae Min. / High-k TixSi1-xO2 thin films prepared by co-sputtering method. In: Microelectronic Engineering. 2008 ; Vol. 85, No. 1. pp. 100-103.
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High-k TixSi1-xO2 thin films prepared by co-sputtering method. / Kim, Sungyeon; Ham, Moon Ho; Oh, Byeong Yun; Kim, Hyun Jae; Myoung, Jae Min.

In: Microelectronic Engineering, Vol. 85, No. 1, 01.01.2008, p. 100-103.

Research output: Contribution to journalArticle

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AB - We report on high-k TixSi1-xO2 thin films prepared by RF magnetron co-sputtering using TiO2 and SiO2 targets at room temperature. The TixSi1-xO2 thin films exhibited an amorphous structure with nanocrystalline grains of 3-30 nm having no interfacial layers. The XPS analyses indicate that stoichiometric TiO2 phases in the TixSi1-xO2 films increased due to stronger Ti-O bond with increasing TiO2 RF powers. In addition, the electrical properties of the TixSi1-xO2 films became better with increasing TiO2 RF powers, from which the maximum value of the dielectric constant was estimated to be ∼30 for the samples with TiO2 RF powers of 200 and 250 W. The transmittance of the TixSi1-xO2 films was above 95% with optical bandgap energies of 4.1-4.2 eV. These results demonstrate a potential that the TixSi1-xO2 thin films were applied to a high-k gate dielectric in transparent thin film transistors as well as metal-oxide-semiconductor field-effect transistors.

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