Abstract
A fully integrated up-conversion double balanced mixer for 802.11a application is designed and fabricated by using InGaP/GaAs HBT process. Fabricated mixer shows high linearity due to high linearity characteristic of InGaP/GaAs HBT and passive output balun. For single-ended input and single-ended output configuration, RF/LO/EF baluns are all integrated on a chip and no off-chip component has been used. Active baluns for EF/LO baluns and a passive balun for RF balun are used respectively. A LC current combiner technique which is consisted of high Q on-chip inductors and a capacitor is used for a passive RF balun. Fabricated chip consumes 5 mA currents for mixer core and uses 3 V supply voltage. Chip size is 1.0 mm * 1.17 mm. The measured performance is 3.7 dB power conversion gain, -8 dBm P1dB, 3 dBm OIP3, 30 dB LO-RF isolation, when input IF signal power is -16 dBm and LO signal power is -14 dBm.
| Original language | English |
|---|---|
| Title of host publication | APMC 2005 |
| Subtitle of host publication | Asia-Pacific Microwave Conference Proceedings 2005 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Volume | 3 |
| ISBN (Print) | 078039433X, 9780780394339 |
| DOIs | |
| Publication status | Published - 2005 Jan 1 |
| Event | APMC 2005: Asia-Pacific Microwave Conference 2005 - Suzhou, China Duration: 2005 Dec 4 → 2005 Dec 7 |
Other
| Other | APMC 2005: Asia-Pacific Microwave Conference 2005 |
|---|---|
| Country | China |
| City | Suzhou |
| Period | 05/12/4 → 05/12/7 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
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High linear single-ended up-conversion mixer using InGaP/GaAs HBT process. / Jung, Joo Yong; Myoung, Seong Sik; Yook, Jong Gwan; Jang, Jin Sang; Jeon, Sang Hoon; Park, Jae Woo.
APMC 2005: Asia-Pacific Microwave Conference Proceedings 2005. Vol. 3 Institute of Electrical and Electronics Engineers Inc., 2005. 1606601.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - High linear single-ended up-conversion mixer using InGaP/GaAs HBT process
AU - Jung, Joo Yong
AU - Myoung, Seong Sik
AU - Yook, Jong Gwan
AU - Jang, Jin Sang
AU - Jeon, Sang Hoon
AU - Park, Jae Woo
PY - 2005/1/1
Y1 - 2005/1/1
N2 - A fully integrated up-conversion double balanced mixer for 802.11a application is designed and fabricated by using InGaP/GaAs HBT process. Fabricated mixer shows high linearity due to high linearity characteristic of InGaP/GaAs HBT and passive output balun. For single-ended input and single-ended output configuration, RF/LO/EF baluns are all integrated on a chip and no off-chip component has been used. Active baluns for EF/LO baluns and a passive balun for RF balun are used respectively. A LC current combiner technique which is consisted of high Q on-chip inductors and a capacitor is used for a passive RF balun. Fabricated chip consumes 5 mA currents for mixer core and uses 3 V supply voltage. Chip size is 1.0 mm * 1.17 mm. The measured performance is 3.7 dB power conversion gain, -8 dBm P1dB, 3 dBm OIP3, 30 dB LO-RF isolation, when input IF signal power is -16 dBm and LO signal power is -14 dBm.
AB - A fully integrated up-conversion double balanced mixer for 802.11a application is designed and fabricated by using InGaP/GaAs HBT process. Fabricated mixer shows high linearity due to high linearity characteristic of InGaP/GaAs HBT and passive output balun. For single-ended input and single-ended output configuration, RF/LO/EF baluns are all integrated on a chip and no off-chip component has been used. Active baluns for EF/LO baluns and a passive balun for RF balun are used respectively. A LC current combiner technique which is consisted of high Q on-chip inductors and a capacitor is used for a passive RF balun. Fabricated chip consumes 5 mA currents for mixer core and uses 3 V supply voltage. Chip size is 1.0 mm * 1.17 mm. The measured performance is 3.7 dB power conversion gain, -8 dBm P1dB, 3 dBm OIP3, 30 dB LO-RF isolation, when input IF signal power is -16 dBm and LO signal power is -14 dBm.
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U2 - 10.1109/APMC.2005.1606601
DO - 10.1109/APMC.2005.1606601
M3 - Conference contribution
AN - SCOPUS:33847101930
SN - 078039433X
SN - 9780780394339
VL - 3
BT - APMC 2005
PB - Institute of Electrical and Electronics Engineers Inc.
ER -