High linear single-ended up-conversion mixer using InGaP/GaAs HBT process

Joo Yong Jung, Seong Sik Myoung, Jong Gwan Yook, Jin Sang Jang, Sang Hoon Jeon, Jae Woo Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A fully integrated up-conversion double balanced mixer for 802.11a application is designed and fabricated by using InGaP/GaAs HBT process. Fabricated mixer shows high linearity due to high linearity characteristic of InGaP/GaAs HBT and passive output balun. For single-ended input and single-ended output configuration, RF/LO/EF baluns are all integrated on a chip and no off-chip component has been used. Active baluns for EF/LO baluns and a passive balun for RF balun are used respectively. A LC current combiner technique which is consisted of high Q on-chip inductors and a capacitor is used for a passive RF balun. Fabricated chip consumes 5 mA currents for mixer core and uses 3 V supply voltage. Chip size is 1.0 mm * 1.17 mm. The measured performance is 3.7 dB power conversion gain, -8 dBm P1dB, 3 dBm OIP3, 30 dB LO-RF isolation, when input IF signal power is -16 dBm and LO signal power is -14 dBm.

Original languageEnglish
Title of host publicationAPMC 2005
Subtitle of host publicationAsia-Pacific Microwave Conference Proceedings 2005
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume3
ISBN (Print)078039433X, 9780780394339
DOIs
Publication statusPublished - 2005 Jan 1
EventAPMC 2005: Asia-Pacific Microwave Conference 2005 - Suzhou, China
Duration: 2005 Dec 42005 Dec 7

Other

OtherAPMC 2005: Asia-Pacific Microwave Conference 2005
CountryChina
CitySuzhou
Period05/12/405/12/7

Fingerprint

Heterojunction bipolar transistors
Capacitors
Electric potential

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Jung, J. Y., Myoung, S. S., Yook, J. G., Jang, J. S., Jeon, S. H., & Park, J. W. (2005). High linear single-ended up-conversion mixer using InGaP/GaAs HBT process. In APMC 2005: Asia-Pacific Microwave Conference Proceedings 2005 (Vol. 3). [1606601] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APMC.2005.1606601
Jung, Joo Yong ; Myoung, Seong Sik ; Yook, Jong Gwan ; Jang, Jin Sang ; Jeon, Sang Hoon ; Park, Jae Woo. / High linear single-ended up-conversion mixer using InGaP/GaAs HBT process. APMC 2005: Asia-Pacific Microwave Conference Proceedings 2005. Vol. 3 Institute of Electrical and Electronics Engineers Inc., 2005.
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abstract = "A fully integrated up-conversion double balanced mixer for 802.11a application is designed and fabricated by using InGaP/GaAs HBT process. Fabricated mixer shows high linearity due to high linearity characteristic of InGaP/GaAs HBT and passive output balun. For single-ended input and single-ended output configuration, RF/LO/EF baluns are all integrated on a chip and no off-chip component has been used. Active baluns for EF/LO baluns and a passive balun for RF balun are used respectively. A LC current combiner technique which is consisted of high Q on-chip inductors and a capacitor is used for a passive RF balun. Fabricated chip consumes 5 mA currents for mixer core and uses 3 V supply voltage. Chip size is 1.0 mm * 1.17 mm. The measured performance is 3.7 dB power conversion gain, -8 dBm P1dB, 3 dBm OIP3, 30 dB LO-RF isolation, when input IF signal power is -16 dBm and LO signal power is -14 dBm.",
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Jung, JY, Myoung, SS, Yook, JG, Jang, JS, Jeon, SH & Park, JW 2005, High linear single-ended up-conversion mixer using InGaP/GaAs HBT process. in APMC 2005: Asia-Pacific Microwave Conference Proceedings 2005. vol. 3, 1606601, Institute of Electrical and Electronics Engineers Inc., APMC 2005: Asia-Pacific Microwave Conference 2005, Suzhou, China, 05/12/4. https://doi.org/10.1109/APMC.2005.1606601

High linear single-ended up-conversion mixer using InGaP/GaAs HBT process. / Jung, Joo Yong; Myoung, Seong Sik; Yook, Jong Gwan; Jang, Jin Sang; Jeon, Sang Hoon; Park, Jae Woo.

APMC 2005: Asia-Pacific Microwave Conference Proceedings 2005. Vol. 3 Institute of Electrical and Electronics Engineers Inc., 2005. 1606601.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - A fully integrated up-conversion double balanced mixer for 802.11a application is designed and fabricated by using InGaP/GaAs HBT process. Fabricated mixer shows high linearity due to high linearity characteristic of InGaP/GaAs HBT and passive output balun. For single-ended input and single-ended output configuration, RF/LO/EF baluns are all integrated on a chip and no off-chip component has been used. Active baluns for EF/LO baluns and a passive balun for RF balun are used respectively. A LC current combiner technique which is consisted of high Q on-chip inductors and a capacitor is used for a passive RF balun. Fabricated chip consumes 5 mA currents for mixer core and uses 3 V supply voltage. Chip size is 1.0 mm * 1.17 mm. The measured performance is 3.7 dB power conversion gain, -8 dBm P1dB, 3 dBm OIP3, 30 dB LO-RF isolation, when input IF signal power is -16 dBm and LO signal power is -14 dBm.

AB - A fully integrated up-conversion double balanced mixer for 802.11a application is designed and fabricated by using InGaP/GaAs HBT process. Fabricated mixer shows high linearity due to high linearity characteristic of InGaP/GaAs HBT and passive output balun. For single-ended input and single-ended output configuration, RF/LO/EF baluns are all integrated on a chip and no off-chip component has been used. Active baluns for EF/LO baluns and a passive balun for RF balun are used respectively. A LC current combiner technique which is consisted of high Q on-chip inductors and a capacitor is used for a passive RF balun. Fabricated chip consumes 5 mA currents for mixer core and uses 3 V supply voltage. Chip size is 1.0 mm * 1.17 mm. The measured performance is 3.7 dB power conversion gain, -8 dBm P1dB, 3 dBm OIP3, 30 dB LO-RF isolation, when input IF signal power is -16 dBm and LO signal power is -14 dBm.

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Jung JY, Myoung SS, Yook JG, Jang JS, Jeon SH, Park JW. High linear single-ended up-conversion mixer using InGaP/GaAs HBT process. In APMC 2005: Asia-Pacific Microwave Conference Proceedings 2005. Vol. 3. Institute of Electrical and Electronics Engineers Inc. 2005. 1606601 https://doi.org/10.1109/APMC.2005.1606601