High linear single-ended up-conversion mixer using InGaP/GaAs HBT process

Joo Yong Jung; Seong Sik Myoung; Jong Gwan Yook; Jin Sang Jang; Sang Hoon Jeon; Jae Woo Park

doi:10.1109/APMC.2005.1606601

High linear single-ended up-conversion mixer using InGaP/GaAs HBT process

Joo Yong Jung, Seong Sik Myoung, Jong Gwan Yook, Jin Sang Jang, Sang Hoon Jeon, Jae Woo Park

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A fully integrated up-conversion double balanced mixer for 802.11a application is designed and fabricated by using InGaP/GaAs HBT process. Fabricated mixer shows high linearity due to high linearity characteristic of InGaP/GaAs HBT and passive output balun. For single-ended input and single-ended output configuration, RF/LO/EF baluns are all integrated on a chip and no off-chip component has been used. Active baluns for EF/LO baluns and a passive balun for RF balun are used respectively. A LC current combiner technique which is consisted of high Q on-chip inductors and a capacitor is used for a passive RF balun. Fabricated chip consumes 5 mA currents for mixer core and uses 3 V supply voltage. Chip size is 1.0 mm * 1.17 mm. The measured performance is 3.7 dB power conversion gain, -8 dBm P1dB, 3 dBm OIP3, 30 dB LO-RF isolation, when input IF signal power is -16 dBm and LO signal power is -14 dBm.

Original language	English
Title of host publication	APMC 2005
Subtitle of host publication	Asia-Pacific Microwave Conference Proceedings 2005
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	078039433X, 9780780394339
DOIs	https://doi.org/10.1109/APMC.2005.1606601
Publication status	Published - 2005
Event	APMC 2005: Asia-Pacific Microwave Conference 2005 - Suzhou, China Duration: 2005 Dec 4 → 2005 Dec 7

Publication series

Name	Asia-Pacific Microwave Conference Proceedings, APMC
Volume	3

Other

Other	APMC 2005: Asia-Pacific Microwave Conference 2005
Country	China
City	Suzhou
Period	05/12/4 → 05/12/7

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/APMC.2005.1606601

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Jung, J. Y., Myoung, S. S., Yook, J. G., Jang, J. S., Jeon, S. H., & Park, J. W. (2005). High linear single-ended up-conversion mixer using InGaP/GaAs HBT process. In APMC 2005: Asia-Pacific Microwave Conference Proceedings 2005 [1606601] (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 3). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APMC.2005.1606601

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title = "High linear single-ended up-conversion mixer using InGaP/GaAs HBT process",

abstract = "A fully integrated up-conversion double balanced mixer for 802.11a application is designed and fabricated by using InGaP/GaAs HBT process. Fabricated mixer shows high linearity due to high linearity characteristic of InGaP/GaAs HBT and passive output balun. For single-ended input and single-ended output configuration, RF/LO/EF baluns are all integrated on a chip and no off-chip component has been used. Active baluns for EF/LO baluns and a passive balun for RF balun are used respectively. A LC current combiner technique which is consisted of high Q on-chip inductors and a capacitor is used for a passive RF balun. Fabricated chip consumes 5 mA currents for mixer core and uses 3 V supply voltage. Chip size is 1.0 mm * 1.17 mm. The measured performance is 3.7 dB power conversion gain, -8 dBm P1dB, 3 dBm OIP3, 30 dB LO-RF isolation, when input IF signal power is -16 dBm and LO signal power is -14 dBm.",

author = "Jung, {Joo Yong} and Myoung, {Seong Sik} and Yook, {Jong Gwan} and Jang, {Jin Sang} and Jeon, {Sang Hoon} and Park, {Jae Woo}",

year = "2005",

doi = "10.1109/APMC.2005.1606601",

language = "English",

isbn = "078039433X",

series = "Asia-Pacific Microwave Conference Proceedings, APMC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Jung, JY, Myoung, SS, Yook, JG, Jang, JS, Jeon, SH & Park, JW 2005, High linear single-ended up-conversion mixer using InGaP/GaAs HBT process. in APMC 2005: Asia-Pacific Microwave Conference Proceedings 2005., 1606601, Asia-Pacific Microwave Conference Proceedings, APMC, vol. 3, Institute of Electrical and Electronics Engineers Inc., APMC 2005: Asia-Pacific Microwave Conference 2005, Suzhou, China, 05/12/4. https://doi.org/10.1109/APMC.2005.1606601

High linear single-ended up-conversion mixer using InGaP/GaAs HBT process. / Jung, Joo Yong; Myoung, Seong Sik; Yook, Jong Gwan; Jang, Jin Sang; Jeon, Sang Hoon; Park, Jae Woo.

APMC 2005: Asia-Pacific Microwave Conference Proceedings 2005. Institute of Electrical and Electronics Engineers Inc., 2005. 1606601 (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Jang, Jin Sang

AU - Jeon, Sang Hoon

AU - Park, Jae Woo

PY - 2005

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N2 - A fully integrated up-conversion double balanced mixer for 802.11a application is designed and fabricated by using InGaP/GaAs HBT process. Fabricated mixer shows high linearity due to high linearity characteristic of InGaP/GaAs HBT and passive output balun. For single-ended input and single-ended output configuration, RF/LO/EF baluns are all integrated on a chip and no off-chip component has been used. Active baluns for EF/LO baluns and a passive balun for RF balun are used respectively. A LC current combiner technique which is consisted of high Q on-chip inductors and a capacitor is used for a passive RF balun. Fabricated chip consumes 5 mA currents for mixer core and uses 3 V supply voltage. Chip size is 1.0 mm * 1.17 mm. The measured performance is 3.7 dB power conversion gain, -8 dBm P1dB, 3 dBm OIP3, 30 dB LO-RF isolation, when input IF signal power is -16 dBm and LO signal power is -14 dBm.

AB - A fully integrated up-conversion double balanced mixer for 802.11a application is designed and fabricated by using InGaP/GaAs HBT process. Fabricated mixer shows high linearity due to high linearity characteristic of InGaP/GaAs HBT and passive output balun. For single-ended input and single-ended output configuration, RF/LO/EF baluns are all integrated on a chip and no off-chip component has been used. Active baluns for EF/LO baluns and a passive balun for RF balun are used respectively. A LC current combiner technique which is consisted of high Q on-chip inductors and a capacitor is used for a passive RF balun. Fabricated chip consumes 5 mA currents for mixer core and uses 3 V supply voltage. Chip size is 1.0 mm * 1.17 mm. The measured performance is 3.7 dB power conversion gain, -8 dBm P1dB, 3 dBm OIP3, 30 dB LO-RF isolation, when input IF signal power is -16 dBm and LO signal power is -14 dBm.

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