High mobility and advanced channels materials

Jungwoo Oh, Prashant Majhi, Raj Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ge based channels appear promising for high mobility pMOSFETs - Need for module level (epi, gate stack, junctions, contacts) optimization as demonstrated • Demonstrated additivity of strain (uniaxial) to the mobility of Ge based channels • Several challenges remain but exciting opportunities for focused research (academic and industry collaboration)

Original languageEnglish
Title of host publication16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008
Pagesdxix-dlxiv
DOIs
Publication statusPublished - 2008
Event16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008 - Las Vegas, NV, United States
Duration: 2008 Sep 302008 Oct 3

Publication series

Name16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008

Other

Other16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008
CountryUnited States
CityLas Vegas, NV
Period08/9/3008/10/3

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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