High mobility CMOS transistors on Si/SiGe heterostructure channels

Jungwoo Oh, Kanghoon Jeon, Se Hoon Lee, Jeff Huang, P. Y. Hung, Injo Ok, Barry Sassman, Dae Hong Ko, Paul Kirsch, Raj Jammy

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We have demonstrated high mobility CMOS transistors on Si/SiGe heterostructure channels selectively grown on a Si (1 0 0) substrate. Electron and hole mobility is enhanced simultaneously on a single Si/SiGe heterostructure channel by confining electrons in a strained Si channel and holes in a SiGe channel, respectively. Enhanced carrier transports in strained Si or relaxed SiGe channels are confirmed by quantum mechanical simulation. Integration of high mobility CMOS on a single channel is a promising approach to extend Si CMOS technology without the process complexity associated with dual or hybrid channel approaches.

Original languageEnglish
Pages (from-to)26-28
Number of pages3
JournalMicroelectronic Engineering
Volume97
DOIs
Publication statusPublished - 2012 Sep 1

Fingerprint

Heterojunctions
CMOS
Transistors
transistors
Hole mobility
Carrier transport
Electron mobility
Electrons
Substrates
hole mobility
electron mobility
confining
electrons
simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Oh, Jungwoo ; Jeon, Kanghoon ; Lee, Se Hoon ; Huang, Jeff ; Hung, P. Y. ; Ok, Injo ; Sassman, Barry ; Ko, Dae Hong ; Kirsch, Paul ; Jammy, Raj. / High mobility CMOS transistors on Si/SiGe heterostructure channels. In: Microelectronic Engineering. 2012 ; Vol. 97. pp. 26-28.
@article{49c753c365574a44a54db4354e397c80,
title = "High mobility CMOS transistors on Si/SiGe heterostructure channels",
abstract = "We have demonstrated high mobility CMOS transistors on Si/SiGe heterostructure channels selectively grown on a Si (1 0 0) substrate. Electron and hole mobility is enhanced simultaneously on a single Si/SiGe heterostructure channel by confining electrons in a strained Si channel and holes in a SiGe channel, respectively. Enhanced carrier transports in strained Si or relaxed SiGe channels are confirmed by quantum mechanical simulation. Integration of high mobility CMOS on a single channel is a promising approach to extend Si CMOS technology without the process complexity associated with dual or hybrid channel approaches.",
author = "Jungwoo Oh and Kanghoon Jeon and Lee, {Se Hoon} and Jeff Huang and Hung, {P. Y.} and Injo Ok and Barry Sassman and Ko, {Dae Hong} and Paul Kirsch and Raj Jammy",
year = "2012",
month = "9",
day = "1",
doi = "10.1016/j.mee.2012.02.030",
language = "English",
volume = "97",
pages = "26--28",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

Oh, J, Jeon, K, Lee, SH, Huang, J, Hung, PY, Ok, I, Sassman, B, Ko, DH, Kirsch, P & Jammy, R 2012, 'High mobility CMOS transistors on Si/SiGe heterostructure channels', Microelectronic Engineering, vol. 97, pp. 26-28. https://doi.org/10.1016/j.mee.2012.02.030

High mobility CMOS transistors on Si/SiGe heterostructure channels. / Oh, Jungwoo; Jeon, Kanghoon; Lee, Se Hoon; Huang, Jeff; Hung, P. Y.; Ok, Injo; Sassman, Barry; Ko, Dae Hong; Kirsch, Paul; Jammy, Raj.

In: Microelectronic Engineering, Vol. 97, 01.09.2012, p. 26-28.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High mobility CMOS transistors on Si/SiGe heterostructure channels

AU - Oh, Jungwoo

AU - Jeon, Kanghoon

AU - Lee, Se Hoon

AU - Huang, Jeff

AU - Hung, P. Y.

AU - Ok, Injo

AU - Sassman, Barry

AU - Ko, Dae Hong

AU - Kirsch, Paul

AU - Jammy, Raj

PY - 2012/9/1

Y1 - 2012/9/1

N2 - We have demonstrated high mobility CMOS transistors on Si/SiGe heterostructure channels selectively grown on a Si (1 0 0) substrate. Electron and hole mobility is enhanced simultaneously on a single Si/SiGe heterostructure channel by confining electrons in a strained Si channel and holes in a SiGe channel, respectively. Enhanced carrier transports in strained Si or relaxed SiGe channels are confirmed by quantum mechanical simulation. Integration of high mobility CMOS on a single channel is a promising approach to extend Si CMOS technology without the process complexity associated with dual or hybrid channel approaches.

AB - We have demonstrated high mobility CMOS transistors on Si/SiGe heterostructure channels selectively grown on a Si (1 0 0) substrate. Electron and hole mobility is enhanced simultaneously on a single Si/SiGe heterostructure channel by confining electrons in a strained Si channel and holes in a SiGe channel, respectively. Enhanced carrier transports in strained Si or relaxed SiGe channels are confirmed by quantum mechanical simulation. Integration of high mobility CMOS on a single channel is a promising approach to extend Si CMOS technology without the process complexity associated with dual or hybrid channel approaches.

UR - http://www.scopus.com/inward/record.url?scp=84861329002&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861329002&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2012.02.030

DO - 10.1016/j.mee.2012.02.030

M3 - Article

VL - 97

SP - 26

EP - 28

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -