High mobility CMOS transistors on Si/SiGe heterostructure channels

Jungwoo Oh, Kanghoon Jeon, Se Hoon Lee, Jeff Huang, P. Y. Hung, Injo Ok, Barry Sassman, Dae Hong Ko, Paul Kirsch, Raj Jammy

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We have demonstrated high mobility CMOS transistors on Si/SiGe heterostructure channels selectively grown on a Si (1 0 0) substrate. Electron and hole mobility is enhanced simultaneously on a single Si/SiGe heterostructure channel by confining electrons in a strained Si channel and holes in a SiGe channel, respectively. Enhanced carrier transports in strained Si or relaxed SiGe channels are confirmed by quantum mechanical simulation. Integration of high mobility CMOS on a single channel is a promising approach to extend Si CMOS technology without the process complexity associated with dual or hybrid channel approaches.

Original languageEnglish
Pages (from-to)26-28
Number of pages3
JournalMicroelectronic Engineering
Publication statusPublished - 2012 Sep 1


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Oh, J., Jeon, K., Lee, S. H., Huang, J., Hung, P. Y., Ok, I., Sassman, B., Ko, D. H., Kirsch, P., & Jammy, R. (2012). High mobility CMOS transistors on Si/SiGe heterostructure channels. Microelectronic Engineering, 97, 26-28. https://doi.org/10.1016/j.mee.2012.02.030