High-mobility low-temperature ZnO transistors with low-voltage operation

Hyojin Bong, Wi Hyoung Lee, Dong Yun Lee, Beom Joon Kim, Jeong Ho Cho, Kilwon Cho

Research output: Contribution to journalArticle

103 Citations (Scopus)


Low voltage high mobility n-type thin film transistors (TFTs) based on sol-gel processed zinc oxide (ZnO) were fabricated using a high capacitance ion gel gate dielectric. The ion gel gated solution-processed ZnO TFTs were found to exhibit excellent electrical properties. TFT carrier mobilities were 13 cm 2 /V s, ON/OFF current ratios were 105, regardless of the sintering temperature used for the preparation of the ZnO thin films. Ion gel gated ZnO TFTs are successfully demonstrated on plastic substrates for the large area flexible electronics.

Original languageEnglish
Article number192115
JournalApplied Physics Letters
Issue number19
Publication statusPublished - 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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