High-mobility low-temperature ZnO transistors with low-voltage operation

Hyojin Bong, Wi Hyoung Lee, Dong Yun Lee, Beom Joon Kim, Jeong Ho Cho, Kilwon Cho

Research output: Contribution to journalArticle

100 Citations (Scopus)

Abstract

Low voltage high mobility n-type thin film transistors (TFTs) based on sol-gel processed zinc oxide (ZnO) were fabricated using a high capacitance ion gel gate dielectric. The ion gel gated solution-processed ZnO TFTs were found to exhibit excellent electrical properties. TFT carrier mobilities were 13 cm 2 /V s, ON/OFF current ratios were 10 5 , regardless of the sintering temperature used for the preparation of the ZnO thin films. Ion gel gated ZnO TFTs are successfully demonstrated on plastic substrates for the large area flexible electronics.

Original languageEnglish
Article number192115
JournalApplied Physics Letters
Volume96
Issue number19
DOIs
Publication statusPublished - 2010 Jun 7

Fingerprint

zinc oxides
low voltage
transistors
gels
thin films
ions
carrier mobility
sintering
plastics
capacitance
electrical properties
preparation
electronics
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Bong, Hyojin ; Lee, Wi Hyoung ; Lee, Dong Yun ; Kim, Beom Joon ; Cho, Jeong Ho ; Cho, Kilwon. / High-mobility low-temperature ZnO transistors with low-voltage operation. In: Applied Physics Letters. 2010 ; Vol. 96, No. 19.
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High-mobility low-temperature ZnO transistors with low-voltage operation. / Bong, Hyojin; Lee, Wi Hyoung; Lee, Dong Yun; Kim, Beom Joon; Cho, Jeong Ho; Cho, Kilwon.

In: Applied Physics Letters, Vol. 96, No. 19, 192115, 07.06.2010.

Research output: Contribution to journalArticle

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