High-Mobility MoS2Directly Grown on Polymer Substrate with Kinetics-Controlled Metal-Organic Chemical Vapor Deposition

Jihun Mun, Hyeji Park, Jaeseo Park, Daehwa Joung, Seoung Ki Lee, Juyoung Leem, Jae Min Myoung, Jonghoo Park, Soo Hwan Jeong, Won Chegal, Sungwoo Nam, Sang Woo Kang

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

Batch growth of high-mobility (μFE > 10 cm2V-1s-1) molybdenum disulfide (MoS2) films can be achieved by means of the chemical vapor deposition (CVD) method at high temperatures (>500 °C) on rigid substrates. Although high-temperature growth guarantees film quality, time- and cost-consuming transfer processes are required to fabricate flexible devices. In contrast, low-temperature approaches (<250 °C) for direct growth on polymer substrates have thus far achieved film growth with limited spatial homogeneity and electrical performance (μFE is unreported). The growth of a high-mobility MoS2 film directly on a polymer substrate remains challenging. In this study, a novel low-temperature (250 °C) process to successfully overcome this challenge by kinetics-controlled metal-organic CVD (MOCVD) is proposed. Low-temperature MOCVD was achieved by maintaining the flux of an alkali-metal catalyst constant during the process; furthermore, MoS2 was directly synthesized on a polyimide (PI) substrate. The as-grown film exhibits a 4 in. wafer-scale uniformity, field-effect mobility of 10 cm2V-1s-1, and on/off ratio of 105, which are comparable with those of high-temperature-grown MoS2. The directly fabricated flexible MoS2 field-effect transistors demonstrate excellent stability of electrical properties following a 1000 cycle bending test with a 1 mm radius.

Original languageEnglish
Pages (from-to)608-616
Number of pages9
JournalACS Applied Electronic Materials
Volume1
Issue number4
DOIs
Publication statusPublished - 2019 Apr 23

Bibliographical note

Funding Information:
This work was supported by the Technology Innovation Program (project no. 10062161, Direct low-temperature synthesis of two-dimensional materials and heterostructure on flexible substrate for next-generation high-mobility electronic devices), funded by the Ministry of Trade, Industry, and Energy (MOTIE, Korea), and was supported by development of semiconductor measurement equipment technology funded by Korea Research Institute of Standards and Science (KRISS-2019-GP2019-0019).

Publisher Copyright:
Copyright © 2019 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrochemistry
  • Materials Chemistry

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