High-mobility nonvolatile memory thin-film transistors with a ferroelectric polymer interfacing ZnO and pentacene channels

Kwang H. Lee, Gyubaek Lee, Kimoon Lee, Min Suk Oh, Seongil Im, Sung Min Yoon

Research output: Contribution to journalArticle

109 Citations (Scopus)


(Graph Presented) Nonvolatile memory ferroelectric thin-film transistors (FeTFT) with P(VDF-TrFE) polymer are demonstrated with both n-channel ZnO and p-channel pentacene. A high mobility of ≈1 cm2̂ V -1 s-1 and large memory window of ≈20 V are achieved through the organic ferroelectric- inorganic channel hybrid device of ZnO-FeTFT. WRITE/ERASE states are clearly distinguished by ±20 V switching for ZnO- and pentacene-FeTFTs.

Original languageEnglish
Pages (from-to)4287-4291
Number of pages5
JournalAdvanced Materials
Issue number42
Publication statusPublished - 2009 Nov 13


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this