High-mobility nonvolatile memory thin-film transistors with a ferroelectric polymer interfacing ZnO and pentacene channels

Kwang H. Lee, Gyubaek Lee, Kimoon Lee, Min Suk Oh, Seongil Im, Sung Min Yoon

Research output: Contribution to journalArticle

108 Citations (Scopus)

Abstract

(Graph Presented) Nonvolatile memory ferroelectric thin-film transistors (FeTFT) with P(VDF-TrFE) polymer are demonstrated with both n-channel ZnO and p-channel pentacene. A high mobility of ≈1 cm2̂ V -1 s-1 and large memory window of ≈20 V are achieved through the organic ferroelectric- inorganic channel hybrid device of ZnO-FeTFT. WRITE/ERASE states are clearly distinguished by ±20 V switching for ZnO- and pentacene-FeTFTs.

Original languageEnglish
Pages (from-to)4287-4291
Number of pages5
JournalAdvanced Materials
Volume21
Issue number42
DOIs
Publication statusPublished - 2009 Nov 13

Fingerprint

Ferroelectric thin films
Thin film transistors
Ferroelectric materials
Polymers
Data storage equipment
pentacene

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lee, Kwang H. ; Lee, Gyubaek ; Lee, Kimoon ; Oh, Min Suk ; Im, Seongil ; Yoon, Sung Min. / High-mobility nonvolatile memory thin-film transistors with a ferroelectric polymer interfacing ZnO and pentacene channels. In: Advanced Materials. 2009 ; Vol. 21, No. 42. pp. 4287-4291.
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High-mobility nonvolatile memory thin-film transistors with a ferroelectric polymer interfacing ZnO and pentacene channels. / Lee, Kwang H.; Lee, Gyubaek; Lee, Kimoon; Oh, Min Suk; Im, Seongil; Yoon, Sung Min.

In: Advanced Materials, Vol. 21, No. 42, 13.11.2009, p. 4287-4291.

Research output: Contribution to journalArticle

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AU - Yoon, Sung Min

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