High-mobility nonvolatile memory thin-film transistors with a ferroelectric polymer interfacing ZnO and pentacene channels

Kwang H. Lee; Gyubaek Lee; Kimoon Lee; Min Suk Oh; Seongil Im; Sung Min Yoon

doi:10.1002/adma.200900398

High-mobility nonvolatile memory thin-film transistors with a ferroelectric polymer interfacing ZnO and pentacene channels

Kwang H. Lee, Gyubaek Lee, Kimoon Lee, Min Suk Oh, Seongil Im, Sung Min Yoon

Department of Physics

Research output: Contribution to journal › Article › peer-review

125 Citations (Scopus)

Abstract

(Graph Presented) Nonvolatile memory ferroelectric thin-film transistors (FeTFT) with P(VDF-TrFE) polymer are demonstrated with both n-channel ZnO and p-channel pentacene. A high mobility of ≈1 cm²̂ V ^-1 s^-1 and large memory window of ≈20 V are achieved through the organic ferroelectric- inorganic channel hybrid device of ZnO-FeTFT. WRITE/ERASE states are clearly distinguished by ±20 V switching for ZnO- and pentacene-FeTFTs.

Original language	English
Pages (from-to)	4287-4291
Number of pages	5
Journal	Advanced Materials
Volume	21
Issue number	42
DOIs	https://doi.org/10.1002/adma.200900398
Publication status	Published - 2009 Nov 13

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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abstract = "(Graph Presented) Nonvolatile memory ferroelectric thin-film transistors (FeTFT) with P(VDF-TrFE) polymer are demonstrated with both n-channel ZnO and p-channel pentacene. A high mobility of ≈1 cm{\^2} V -1 s-1 and large memory window of ≈20 V are achieved through the organic ferroelectric- inorganic channel hybrid device of ZnO-FeTFT. WRITE/ERASE states are clearly distinguished by ±20 V switching for ZnO- and pentacene-FeTFTs.",

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AU - Lee, Kwang H.

AU - Lee, Gyubaek

AU - Lee, Kimoon

AU - Oh, Min Suk

AU - Im, Seongil

AU - Yoon, Sung Min

PY - 2009/11/13

Y1 - 2009/11/13

N2 - (Graph Presented) Nonvolatile memory ferroelectric thin-film transistors (FeTFT) with P(VDF-TrFE) polymer are demonstrated with both n-channel ZnO and p-channel pentacene. A high mobility of ≈1 cm2̂ V -1 s-1 and large memory window of ≈20 V are achieved through the organic ferroelectric- inorganic channel hybrid device of ZnO-FeTFT. WRITE/ERASE states are clearly distinguished by ±20 V switching for ZnO- and pentacene-FeTFTs.

AB - (Graph Presented) Nonvolatile memory ferroelectric thin-film transistors (FeTFT) with P(VDF-TrFE) polymer are demonstrated with both n-channel ZnO and p-channel pentacene. A high mobility of ≈1 cm2̂ V -1 s-1 and large memory window of ≈20 V are achieved through the organic ferroelectric- inorganic channel hybrid device of ZnO-FeTFT. WRITE/ERASE states are clearly distinguished by ±20 V switching for ZnO- and pentacene-FeTFTs.

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High-mobility nonvolatile memory thin-film transistors with a ferroelectric polymer interfacing ZnO and pentacene channels

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