High-mobility property of crystallized In-Te chalcogenide materials

Sung Jin Park; Seung Jong Park; Dambi Park; Min An; Mann Ho Cho; Jonggi Kim; Heedo Na; Sung Hoon Park; Hyunchul Sohn

doi:10.1007/s13391-012-2035-9

High-mobility property of crystallized In-Te chalcogenide materials

Sung Jin Park, Seung Jong Park, Dambi Park, Min An, Mann Ho Cho, Jonggi Kim, Heedo Na, Sung Hoon Park, Hyunchul Sohn

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In-Te films were deposited by ion beam sputtering deposition (IBSD) using In and Te targets. The crystallization characteristics of the resulting films were investigated by 4-point R _s measurement, x-ray diffraction (XRD), transmission electron microscopy (TEM), and the Hall-effect measurement system. As the amount of In was increased in In-Te, the crystallization temperature increased. X-ray data for the crystalline structure show that phase separation to In ₂Te ₃ and InTe occurred in InTe and In ₃Te ₂ samples after annealing at 350°C. The value of carrier mobility and concentration decreased in order of In ₂Te ₃, In ₃Te ₂, and InTe. The decreasing value is caused by phase separation and is the unique property of chemical composition.

Original language	English
Pages (from-to)	175-178
Number of pages	4
Journal	Electronic Materials Letters
Volume	8
Issue number	2
DOIs	https://doi.org/10.1007/s13391-012-2035-9
Publication status	Published - 2012 Apr

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1007/s13391-012-2035-9

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title = "High-mobility property of crystallized In-Te chalcogenide materials",

abstract = "In-Te films were deposited by ion beam sputtering deposition (IBSD) using In and Te targets. The crystallization characteristics of the resulting films were investigated by 4-point R s measurement, x-ray diffraction (XRD), transmission electron microscopy (TEM), and the Hall-effect measurement system. As the amount of In was increased in In-Te, the crystallization temperature increased. X-ray data for the crystalline structure show that phase separation to In 2Te 3 and InTe occurred in InTe and In 3Te 2 samples after annealing at 350°C. The value of carrier mobility and concentration decreased in order of In 2Te 3, In 3Te 2, and InTe. The decreasing value is caused by phase separation and is the unique property of chemical composition.",

author = "Park, {Sung Jin} and Park, {Seung Jong} and Dambi Park and Min An and Cho, {Mann Ho} and Jonggi Kim and Heedo Na and Park, {Sung Hoon} and Hyunchul Sohn",

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T1 - High-mobility property of crystallized In-Te chalcogenide materials

AU - Park, Sung Jin

AU - Park, Seung Jong

AU - Park, Dambi

AU - An, Min

AU - Cho, Mann Ho

AU - Kim, Jonggi

AU - Na, Heedo

AU - Park, Sung Hoon

AU - Sohn, Hyunchul

PY - 2012/4

Y1 - 2012/4

N2 - In-Te films were deposited by ion beam sputtering deposition (IBSD) using In and Te targets. The crystallization characteristics of the resulting films were investigated by 4-point R s measurement, x-ray diffraction (XRD), transmission electron microscopy (TEM), and the Hall-effect measurement system. As the amount of In was increased in In-Te, the crystallization temperature increased. X-ray data for the crystalline structure show that phase separation to In 2Te 3 and InTe occurred in InTe and In 3Te 2 samples after annealing at 350°C. The value of carrier mobility and concentration decreased in order of In 2Te 3, In 3Te 2, and InTe. The decreasing value is caused by phase separation and is the unique property of chemical composition.

AB - In-Te films were deposited by ion beam sputtering deposition (IBSD) using In and Te targets. The crystallization characteristics of the resulting films were investigated by 4-point R s measurement, x-ray diffraction (XRD), transmission electron microscopy (TEM), and the Hall-effect measurement system. As the amount of In was increased in In-Te, the crystallization temperature increased. X-ray data for the crystalline structure show that phase separation to In 2Te 3 and InTe occurred in InTe and In 3Te 2 samples after annealing at 350°C. The value of carrier mobility and concentration decreased in order of In 2Te 3, In 3Te 2, and InTe. The decreasing value is caused by phase separation and is the unique property of chemical composition.

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High-mobility property of crystallized In-Te chalcogenide materials

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