High-mobility property of crystallized In-Te chalcogenide materials

Sung Jin Park, Seung Jong Park, Dambi Park, Min An, Mann Ho Cho, Jonggi Kim, Heedo Na, Sung Hoon Park, Hyunchul Sohn

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Abstract

In-Te films were deposited by ion beam sputtering deposition (IBSD) using In and Te targets. The crystallization characteristics of the resulting films were investigated by 4-point R s measurement, x-ray diffraction (XRD), transmission electron microscopy (TEM), and the Hall-effect measurement system. As the amount of In was increased in In-Te, the crystallization temperature increased. X-ray data for the crystalline structure show that phase separation to In 2Te 3 and InTe occurred in InTe and In 3Te 2 samples after annealing at 350°C. The value of carrier mobility and concentration decreased in order of In 2Te 3, In 3Te 2, and InTe. The decreasing value is caused by phase separation and is the unique property of chemical composition.

Original languageEnglish
Pages (from-to)175-178
Number of pages4
JournalElectronic Materials Letters
Volume8
Issue number2
DOIs
Publication statusPublished - 2012 Apr 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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