In-Te films were deposited by ion beam sputtering deposition (IBSD) using In and Te targets. The crystallization characteristics of the resulting films were investigated by 4-point R s measurement, x-ray diffraction (XRD), transmission electron microscopy (TEM), and the Hall-effect measurement system. As the amount of In was increased in In-Te, the crystallization temperature increased. X-ray data for the crystalline structure show that phase separation to In 2Te 3 and InTe occurred in InTe and In 3Te 2 samples after annealing at 350°C. The value of carrier mobility and concentration decreased in order of In 2Te 3, In 3Te 2, and InTe. The decreasing value is caused by phase separation and is the unique property of chemical composition.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials