Abstract
High mobility metal-oxide-semiconductor field-effect transistors (MOSFETs) are demonstrated on strained or relaxed SiGe-on-Si heterostructures with Si cap/SiGe channel quantum well structures. Si cap processing is frequently used to enhance hole mobility of SiGe pMOSFETs by improving the interface quality of high-k gate dielectrics and SiGe channels. However, one of mechanisms that limits future gate oxide scaling is Ge enhanced Si oxidation, which results in a thick Si oxide interface layer. In this work, without using Si cap process, we have fabricated high mobility SiGe channel pMOSFETs after optimizing epitaxial SiGe-on-Si and high-k dielectric/metal gate process. High mobility with low off-state current have been achieved and correlated with epitaxial SiGe-on-Si processes.
| Original language | English |
|---|---|
| Article number | 04C055 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 48 |
| Issue number | 4 PART 2 |
| DOIs | |
| Publication status | Published - 2009 Apr 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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High mobility SiGe p-channel metal-oxide-semiconductor field-effect transistors epitaxially grown on Si(100) substrates with HfSiO2 high-k dielectric and metal gate. / Oh, Jungwoo; Majhi, Prashant; Kang, Chang Yong; Jammy, Raj; Joe, Raymond; Sugawara, Takuya; Akasaka, Yasushi; Kaitsuka, Takanobu; Arikado, Tsunetoshi; Tomoyasu, Masayuki.
In: Japanese Journal of Applied Physics, Vol. 48, No. 4 PART 2, 04C055, 01.04.2009.Research output: Contribution to journal › Article
TY - JOUR
T1 - High mobility SiGe p-channel metal-oxide-semiconductor field-effect transistors epitaxially grown on Si(100) substrates with HfSiO2 high-k dielectric and metal gate
AU - Oh, Jungwoo
AU - Majhi, Prashant
AU - Kang, Chang Yong
AU - Jammy, Raj
AU - Joe, Raymond
AU - Sugawara, Takuya
AU - Akasaka, Yasushi
AU - Kaitsuka, Takanobu
AU - Arikado, Tsunetoshi
AU - Tomoyasu, Masayuki
PY - 2009/4/1
Y1 - 2009/4/1
N2 - High mobility metal-oxide-semiconductor field-effect transistors (MOSFETs) are demonstrated on strained or relaxed SiGe-on-Si heterostructures with Si cap/SiGe channel quantum well structures. Si cap processing is frequently used to enhance hole mobility of SiGe pMOSFETs by improving the interface quality of high-k gate dielectrics and SiGe channels. However, one of mechanisms that limits future gate oxide scaling is Ge enhanced Si oxidation, which results in a thick Si oxide interface layer. In this work, without using Si cap process, we have fabricated high mobility SiGe channel pMOSFETs after optimizing epitaxial SiGe-on-Si and high-k dielectric/metal gate process. High mobility with low off-state current have been achieved and correlated with epitaxial SiGe-on-Si processes.
AB - High mobility metal-oxide-semiconductor field-effect transistors (MOSFETs) are demonstrated on strained or relaxed SiGe-on-Si heterostructures with Si cap/SiGe channel quantum well structures. Si cap processing is frequently used to enhance hole mobility of SiGe pMOSFETs by improving the interface quality of high-k gate dielectrics and SiGe channels. However, one of mechanisms that limits future gate oxide scaling is Ge enhanced Si oxidation, which results in a thick Si oxide interface layer. In this work, without using Si cap process, we have fabricated high mobility SiGe channel pMOSFETs after optimizing epitaxial SiGe-on-Si and high-k dielectric/metal gate process. High mobility with low off-state current have been achieved and correlated with epitaxial SiGe-on-Si processes.
UR - http://www.scopus.com/inward/record.url?scp=77952466449&partnerID=8YFLogxK
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U2 - 10.1143/JJAP.48.04C055
DO - 10.1143/JJAP.48.04C055
M3 - Article
AN - SCOPUS:77952466449
VL - 48
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 4 PART 2
M1 - 04C055
ER -