High mobility SiGe p-channel metal-oxide-semiconductor field-effect transistors epitaxially grown on Si(100) substrates with HfSiO2 high-k dielectric and metal gate

Jungwoo Oh, Prashant Majhi, Chang Yong Kang, Raj Jammy, Raymond Joe, Takuya Sugawara, Yasushi Akasaka, Takanobu Kaitsuka, Tsunetoshi Arikado, Masayuki Tomoyasu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

High mobility metal-oxide-semiconductor field-effect transistors (MOSFETs) are demonstrated on strained or relaxed SiGe-on-Si heterostructures with Si cap/SiGe channel quantum well structures. Si cap processing is frequently used to enhance hole mobility of SiGe pMOSFETs by improving the interface quality of high-k gate dielectrics and SiGe channels. However, one of mechanisms that limits future gate oxide scaling is Ge enhanced Si oxidation, which results in a thick Si oxide interface layer. In this work, without using Si cap process, we have fabricated high mobility SiGe channel pMOSFETs after optimizing epitaxial SiGe-on-Si and high-k dielectric/metal gate process. High mobility with low off-state current have been achieved and correlated with epitaxial SiGe-on-Si processes.

Original languageEnglish
Article number04C055
JournalJapanese Journal of Applied Physics
Volume48
Issue number4 PART 2
DOIs
Publication statusPublished - 2009 Apr 1

Fingerprint

MOSFET devices
caps
metal oxide semiconductors
field effect transistors
Hole mobility
Oxides
Gate dielectrics
Substrates
Metals
metals
Semiconductor quantum wells
Heterojunctions
oxides
hole mobility
Oxidation
Processing
quantum wells
scaling
oxidation
High-k dielectric

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Oh, Jungwoo ; Majhi, Prashant ; Kang, Chang Yong ; Jammy, Raj ; Joe, Raymond ; Sugawara, Takuya ; Akasaka, Yasushi ; Kaitsuka, Takanobu ; Arikado, Tsunetoshi ; Tomoyasu, Masayuki. / High mobility SiGe p-channel metal-oxide-semiconductor field-effect transistors epitaxially grown on Si(100) substrates with HfSiO2 high-k dielectric and metal gate. In: Japanese Journal of Applied Physics. 2009 ; Vol. 48, No. 4 PART 2.
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abstract = "High mobility metal-oxide-semiconductor field-effect transistors (MOSFETs) are demonstrated on strained or relaxed SiGe-on-Si heterostructures with Si cap/SiGe channel quantum well structures. Si cap processing is frequently used to enhance hole mobility of SiGe pMOSFETs by improving the interface quality of high-k gate dielectrics and SiGe channels. However, one of mechanisms that limits future gate oxide scaling is Ge enhanced Si oxidation, which results in a thick Si oxide interface layer. In this work, without using Si cap process, we have fabricated high mobility SiGe channel pMOSFETs after optimizing epitaxial SiGe-on-Si and high-k dielectric/metal gate process. High mobility with low off-state current have been achieved and correlated with epitaxial SiGe-on-Si processes.",
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High mobility SiGe p-channel metal-oxide-semiconductor field-effect transistors epitaxially grown on Si(100) substrates with HfSiO2 high-k dielectric and metal gate. / Oh, Jungwoo; Majhi, Prashant; Kang, Chang Yong; Jammy, Raj; Joe, Raymond; Sugawara, Takuya; Akasaka, Yasushi; Kaitsuka, Takanobu; Arikado, Tsunetoshi; Tomoyasu, Masayuki.

In: Japanese Journal of Applied Physics, Vol. 48, No. 4 PART 2, 04C055, 01.04.2009.

Research output: Contribution to journalArticle

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AU - Oh, Jungwoo

AU - Majhi, Prashant

AU - Kang, Chang Yong

AU - Jammy, Raj

AU - Joe, Raymond

AU - Sugawara, Takuya

AU - Akasaka, Yasushi

AU - Kaitsuka, Takanobu

AU - Arikado, Tsunetoshi

AU - Tomoyasu, Masayuki

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