High mobility SiGe p-channel metal-oxide-semiconductor field-effect transistors epitaxially grown on Si(100) substrates with HfSiO₂ high-k dielectric and metal gate

Engineering

• Metal Gate 100%
• Dielectrics 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Gate Dielectric 50%
• Gate Oxide 50%
• Heterostructures 50%
• Interface Layer 50%
• Quantum Well 50%
• Scaling 50%
• Substrates 50%
• Mechanisms 50%
• Processing 50%
• Oxidation Reaction 50%