High mobility silicon indium oxide thin-film transistor fabrication by sputtering process

S. Arulkumar; S. Parthiban; J. Y. Kwon; Y. Uraoka; J. P.S. Bermundo; Arka Mukherjee; Bikas C. Das

doi:10.1016/j.vacuum.2022.110963

High mobility silicon indium oxide thin-film transistor fabrication by sputtering process

S. Arulkumar, S. Parthiban, J. Y. Kwon, Y. Uraoka, J. P.S. Bermundo, Arka Mukherjee, Bikas C. Das

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Amorphous silicon indium oxide (a-ISO) thin-films were deposited by sputtering process at room temperature for thin-film transistor (TFT) active channel applications. The amorphous nature of the deposited ISO thin films was confirmed by structural analysis and the films had an average surface roughness of ∼0.11 nm. The oxygen partial pressure was varied from 0 to 20% to deposit ISO active channel layers which showed a transition from conducting to semiconducting behaviour. The a-ISO TFT deposited with 5% oxygen partial pressure and post annealed at 100 °C exhibits a saturation mobility of 31.7 cm²/V.s, on-off current ratio of 2.3 × 10¹⁰, turn-on voltage of −5 V and sub-threshold swing of 0.25 V/dec. Bias stress analysis further confirms the stable operation of the ISO TFT devices. Silicon dopant acts as a strong carrier suppressor and enhances performance of a-ISO TFT devices.

Original language	English
Article number	110963
Journal	Vacuum
Volume	199
DOIs	https://doi.org/10.1016/j.vacuum.2022.110963
Publication status	Published - 2022 May

Bibliographical note

Funding Information:
S. Parthiban thanks the financial support from DST SERB, India (Grant no. CRG/2019/002107 ). B.C.D. acknowledges financial support from IISER Thiruvananthapuram, India and DST SERB, India (Grant Nos. CRG/2021/000567 and EEQ/2021/000810 ).

Publisher Copyright:
© 2022 Elsevier Ltd

All Science Journal Classification (ASJC) codes

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

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10.1016/j.vacuum.2022.110963

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title = "High mobility silicon indium oxide thin-film transistor fabrication by sputtering process",

abstract = "Amorphous silicon indium oxide (a-ISO) thin-films were deposited by sputtering process at room temperature for thin-film transistor (TFT) active channel applications. The amorphous nature of the deposited ISO thin films was confirmed by structural analysis and the films had an average surface roughness of ∼0.11 nm. The oxygen partial pressure was varied from 0 to 20% to deposit ISO active channel layers which showed a transition from conducting to semiconducting behaviour. The a-ISO TFT deposited with 5% oxygen partial pressure and post annealed at 100 °C exhibits a saturation mobility of 31.7 cm2/V.s, on-off current ratio of 2.3 × 1010, turn-on voltage of −5 V and sub-threshold swing of 0.25 V/dec. Bias stress analysis further confirms the stable operation of the ISO TFT devices. Silicon dopant acts as a strong carrier suppressor and enhances performance of a-ISO TFT devices.",

author = "S. Arulkumar and S. Parthiban and Kwon, {J. Y.} and Y. Uraoka and Bermundo, {J. P.S.} and Arka Mukherjee and Das, {Bikas C.}",

note = "Funding Information: S. Parthiban thanks the financial support from DST SERB, India (Grant no. CRG/2019/002107 ). B.C.D. acknowledges financial support from IISER Thiruvananthapuram, India and DST SERB, India (Grant Nos. CRG/2021/000567 and EEQ/2021/000810 ). Publisher Copyright: {\textcopyright} 2022 Elsevier Ltd",

year = "2022",

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doi = "10.1016/j.vacuum.2022.110963",

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T1 - High mobility silicon indium oxide thin-film transistor fabrication by sputtering process

AU - Arulkumar, S.

AU - Parthiban, S.

AU - Kwon, J. Y.

AU - Uraoka, Y.

AU - Bermundo, J. P.S.

AU - Mukherjee, Arka

AU - Das, Bikas C.

N1 - Funding Information: S. Parthiban thanks the financial support from DST SERB, India (Grant no. CRG/2019/002107 ). B.C.D. acknowledges financial support from IISER Thiruvananthapuram, India and DST SERB, India (Grant Nos. CRG/2021/000567 and EEQ/2021/000810 ). Publisher Copyright: © 2022 Elsevier Ltd

PY - 2022/5

Y1 - 2022/5

N2 - Amorphous silicon indium oxide (a-ISO) thin-films were deposited by sputtering process at room temperature for thin-film transistor (TFT) active channel applications. The amorphous nature of the deposited ISO thin films was confirmed by structural analysis and the films had an average surface roughness of ∼0.11 nm. The oxygen partial pressure was varied from 0 to 20% to deposit ISO active channel layers which showed a transition from conducting to semiconducting behaviour. The a-ISO TFT deposited with 5% oxygen partial pressure and post annealed at 100 °C exhibits a saturation mobility of 31.7 cm2/V.s, on-off current ratio of 2.3 × 1010, turn-on voltage of −5 V and sub-threshold swing of 0.25 V/dec. Bias stress analysis further confirms the stable operation of the ISO TFT devices. Silicon dopant acts as a strong carrier suppressor and enhances performance of a-ISO TFT devices.

AB - Amorphous silicon indium oxide (a-ISO) thin-films were deposited by sputtering process at room temperature for thin-film transistor (TFT) active channel applications. The amorphous nature of the deposited ISO thin films was confirmed by structural analysis and the films had an average surface roughness of ∼0.11 nm. The oxygen partial pressure was varied from 0 to 20% to deposit ISO active channel layers which showed a transition from conducting to semiconducting behaviour. The a-ISO TFT deposited with 5% oxygen partial pressure and post annealed at 100 °C exhibits a saturation mobility of 31.7 cm2/V.s, on-off current ratio of 2.3 × 1010, turn-on voltage of −5 V and sub-threshold swing of 0.25 V/dec. Bias stress analysis further confirms the stable operation of the ISO TFT devices. Silicon dopant acts as a strong carrier suppressor and enhances performance of a-ISO TFT devices.

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High mobility silicon indium oxide thin-film transistor fabrication by sputtering process

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