Amorphous silicon indium oxide (a-ISO) thin-films were deposited by sputtering process at room temperature for thin-film transistor (TFT) active channel applications. The amorphous nature of the deposited ISO thin films was confirmed by structural analysis and the films had an average surface roughness of ∼0.11 nm. The oxygen partial pressure was varied from 0 to 20% to deposit ISO active channel layers which showed a transition from conducting to semiconducting behaviour. The a-ISO TFT deposited with 5% oxygen partial pressure and post annealed at 100 °C exhibits a saturation mobility of 31.7 cm2/V.s, on-off current ratio of 2.3 × 1010, turn-on voltage of −5 V and sub-threshold swing of 0.25 V/dec. Bias stress analysis further confirms the stable operation of the ISO TFT devices. Silicon dopant acts as a strong carrier suppressor and enhances performance of a-ISO TFT devices.
|Publication status||Published - 2022 May|
Bibliographical noteFunding Information:
S. Parthiban thanks the financial support from DST SERB, India (Grant no. CRG/2019/002107 ). B.C.D. acknowledges financial support from IISER Thiruvananthapuram, India and DST SERB, India (Grant Nos. CRG/2021/000567 and EEQ/2021/000810 ).
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces, Coatings and Films