High mobility silicon indium oxide thin-film transistor fabrication by sputtering process

S. Arulkumar, S. Parthiban, J. Y. Kwon, Y. Uraoka, J. P.S. Bermundo, Arka Mukherjee, Bikas C. Das

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Amorphous silicon indium oxide (a-ISO) thin-films were deposited by sputtering process at room temperature for thin-film transistor (TFT) active channel applications. The amorphous nature of the deposited ISO thin films was confirmed by structural analysis and the films had an average surface roughness of ∼0.11 nm. The oxygen partial pressure was varied from 0 to 20% to deposit ISO active channel layers which showed a transition from conducting to semiconducting behaviour. The a-ISO TFT deposited with 5% oxygen partial pressure and post annealed at 100 °C exhibits a saturation mobility of 31.7 cm2/V.s, on-off current ratio of 2.3 × 1010, turn-on voltage of −5 V and sub-threshold swing of 0.25 V/dec. Bias stress analysis further confirms the stable operation of the ISO TFT devices. Silicon dopant acts as a strong carrier suppressor and enhances performance of a-ISO TFT devices.

Original languageEnglish
Article number110963
Publication statusPublished - 2022 May

Bibliographical note

Funding Information:
S. Parthiban thanks the financial support from DST SERB, India (Grant no. CRG/2019/002107 ). B.C.D. acknowledges financial support from IISER Thiruvananthapuram, India and DST SERB, India (Grant Nos. CRG/2021/000567 and EEQ/2021/000810 ).

Publisher Copyright:
© 2022 Elsevier Ltd

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films


Dive into the research topics of 'High mobility silicon indium oxide thin-film transistor fabrication by sputtering process'. Together they form a unique fingerprint.

Cite this