High-mobility TaN/Al2O3 /Ge(111) n-MOSFETs with RTO-grown passivation layer

M. Jamil, J. Oh, M. Ramon, S. Kaur, P. Majhi, E. Tutuc, S. K. Banerjee

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16 Citations (Scopus)


We report the fabrication of high-electron-mobility Ge(111) n-MOSFETs using a novel and simple approach to passivate a Ge surface by rapid thermal oxidation (RTO). A thin interfacial GeO2 layer is formed by RTO, which passivates the high-κ /Ge interface. The GeO2-passivated n-MOSFETs fabricated using a gate-first self-aligned process with high-κ/metal gate demonstrate a high peak effective mobility (μeff∼713cm2ċV-1ċ -1 with ∼2× enhancement over control Si(100) devices. Moreover, at a drain bias of 1 V and at a gate overdrive of 1.2 V, Ge MOSFETs (L∼75μm) show a drive current of ∼1.1 mA/mm, which is ∼1.6× higher than that of the control Si devices. In addition, a good subthreshold slope of ∼130 mV/decade and an ION/IOFF ratio ∼103 were achieved using the GeO2 interfacial layer formed by RTO.

Original languageEnglish
Article number5357535
Pages (from-to)1208-1210
Number of pages3
JournalIEEE Electron Device Letters
Issue number11
Publication statusPublished - 2010 Nov 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Jamil, M., Oh, J., Ramon, M., Kaur, S., Majhi, P., Tutuc, E., & Banerjee, S. K. (2010). High-mobility TaN/Al2O3 /Ge(111) n-MOSFETs with RTO-grown passivation layer. IEEE Electron Device Letters, 31(11), 1208-1210. [5357535]. https://doi.org/10.1109/LED.2010.2071373