High-mobility TaN/Al2O3 /Ge(111) n-MOSFETs with RTO-grown passivation layer

M. Jamil; J. Oh; M. Ramon; S. Kaur; P. Majhi; E. Tutuc; S. K. Banerjee

doi:10.1109/LED.2010.2071373

High-mobility TaN/Al₂O₃ /Ge(111) n-MOSFETs with RTO-grown passivation layer

M. Jamil, J. Oh, M. Ramon, S. Kaur, P. Majhi, E. Tutuc, S. K. Banerjee

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

We report the fabrication of high-electron-mobility Ge(111) n-MOSFETs using a novel and simple approach to passivate a Ge surface by rapid thermal oxidation (RTO). A thin interfacial GeO₂ layer is formed by RTO, which passivates the high-κ /Ge interface. The GeO₂-passivated n-MOSFETs fabricated using a gate-first self-aligned process with high-κ/metal gate demonstrate a high peak effective mobility (μ_eff∼713cm²ċV^-1ċ ^-1 with ∼2× enhancement over control Si(100) devices. Moreover, at a drain bias of 1 V and at a gate overdrive of 1.2 V, Ge MOSFETs (L∼75μm) show a drive current of ∼1.1 mA/mm, which is ∼1.6× higher than that of the control Si devices. In addition, a good subthreshold slope of ∼130 mV/decade and an I_ON/I_OFF ratio ∼10₃ were achieved using the GeO₂ interfacial layer formed by RTO.

Original language	English
Article number	5357535
Pages (from-to)	1208-1210
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	11
DOIs	https://doi.org/10.1109/LED.2010.2071373
Publication status	Published - 2010 Nov

Bibliographical note

Funding Information:
Manuscript received July 14, 2010; revised August 12, 2010; accepted August 19, 2010. Date of publication October 7, 2010; date of current version October 22, 2010. This work was supported in part by the Defense Advanced Research Projects Agency and in part by the National Science Foundation under Grant 0618242. The review of this letter was arranged by Editor J. Cai.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2010.2071373

Cite this

@article{1b4ed917792341f7a04cc1d2010cdf9f,

title = "High-mobility TaN/Al2O3 /Ge(111) n-MOSFETs with RTO-grown passivation layer",

abstract = "We report the fabrication of high-electron-mobility Ge(111) n-MOSFETs using a novel and simple approach to passivate a Ge surface by rapid thermal oxidation (RTO). A thin interfacial GeO2 layer is formed by RTO, which passivates the high-κ /Ge interface. The GeO2-passivated n-MOSFETs fabricated using a gate-first self-aligned process with high-κ/metal gate demonstrate a high peak effective mobility (μeff∼713cm2ċV-1ċ -1 with ∼2× enhancement over control Si(100) devices. Moreover, at a drain bias of 1 V and at a gate overdrive of 1.2 V, Ge MOSFETs (L∼75μm) show a drive current of ∼1.1 mA/mm, which is ∼1.6× higher than that of the control Si devices. In addition, a good subthreshold slope of ∼130 mV/decade and an ION/IOFF ratio ∼103 were achieved using the GeO2 interfacial layer formed by RTO.",

author = "M. Jamil and J. Oh and M. Ramon and S. Kaur and P. Majhi and E. Tutuc and Banerjee, {S. K.}",

note = "Funding Information: Manuscript received July 14, 2010; revised August 12, 2010; accepted August 19, 2010. Date of publication October 7, 2010; date of current version October 22, 2010. This work was supported in part by the Defense Advanced Research Projects Agency and in part by the National Science Foundation under Grant 0618242. The review of this letter was arranged by Editor J. Cai.",

year = "2010",

month = nov,

doi = "10.1109/LED.2010.2071373",

language = "English",

volume = "31",

pages = "1208--1210",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - High-mobility TaN/Al2O3 /Ge(111) n-MOSFETs with RTO-grown passivation layer

AU - Jamil, M.

AU - Oh, J.

AU - Ramon, M.

AU - Kaur, S.

AU - Majhi, P.

AU - Tutuc, E.

AU - Banerjee, S. K.

N1 - Funding Information: Manuscript received July 14, 2010; revised August 12, 2010; accepted August 19, 2010. Date of publication October 7, 2010; date of current version October 22, 2010. This work was supported in part by the Defense Advanced Research Projects Agency and in part by the National Science Foundation under Grant 0618242. The review of this letter was arranged by Editor J. Cai.

PY - 2010/11

Y1 - 2010/11

N2 - We report the fabrication of high-electron-mobility Ge(111) n-MOSFETs using a novel and simple approach to passivate a Ge surface by rapid thermal oxidation (RTO). A thin interfacial GeO2 layer is formed by RTO, which passivates the high-κ /Ge interface. The GeO2-passivated n-MOSFETs fabricated using a gate-first self-aligned process with high-κ/metal gate demonstrate a high peak effective mobility (μeff∼713cm2ċV-1ċ -1 with ∼2× enhancement over control Si(100) devices. Moreover, at a drain bias of 1 V and at a gate overdrive of 1.2 V, Ge MOSFETs (L∼75μm) show a drive current of ∼1.1 mA/mm, which is ∼1.6× higher than that of the control Si devices. In addition, a good subthreshold slope of ∼130 mV/decade and an ION/IOFF ratio ∼103 were achieved using the GeO2 interfacial layer formed by RTO.

AB - We report the fabrication of high-electron-mobility Ge(111) n-MOSFETs using a novel and simple approach to passivate a Ge surface by rapid thermal oxidation (RTO). A thin interfacial GeO2 layer is formed by RTO, which passivates the high-κ /Ge interface. The GeO2-passivated n-MOSFETs fabricated using a gate-first self-aligned process with high-κ/metal gate demonstrate a high peak effective mobility (μeff∼713cm2ċV-1ċ -1 with ∼2× enhancement over control Si(100) devices. Moreover, at a drain bias of 1 V and at a gate overdrive of 1.2 V, Ge MOSFETs (L∼75μm) show a drive current of ∼1.1 mA/mm, which is ∼1.6× higher than that of the control Si devices. In addition, a good subthreshold slope of ∼130 mV/decade and an ION/IOFF ratio ∼103 were achieved using the GeO2 interfacial layer formed by RTO.

UR - http://www.scopus.com/inward/record.url?scp=78049261917&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78049261917&partnerID=8YFLogxK

U2 - 10.1109/LED.2010.2071373

DO - 10.1109/LED.2010.2071373

M3 - Article

AN - SCOPUS:78049261917

VL - 31

SP - 1208

EP - 1210

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 11

M1 - 5357535

ER -