High optical responsivity of InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels

C. S. Choi, H. S. Kang, Woo Young Choi, H. J. Kim, W. J. Choi, D. H. Kim, K. C. Jang, K. S. Seo

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

The high optical responsivity of the InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels is reported. Experimental results verify that the photovoltaic effect causing the effective decrease of threshold voltage is responsible for the photoresponse to a 1.55-μm optical illumination.

Original languageEnglish
Pages (from-to)846-848
Number of pages3
JournalIEEE Photonics Technology Letters
Volume15
Issue number6
DOIs
Publication statusPublished - 2003 Jun

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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