The high optical responsivity of the InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels is reported. Experimental results verify that the photovoltaic effect causing the effective decrease of threshold voltage is responsible for the photoresponse to a 1.55-μm optical illumination.
Bibliographical noteFunding Information:
Manuscript received October 28, 2002; revised February 28, 2003. This work was supported by the Ministry of Science and Technology of Korea through the National Research Laboratory Program. C.-S. Choi, H.-S. Kang, and W.-Y. Choi are with the Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea (e-mail: email@example.com). H.-J. Kim was with the Nano-device Research Center, Korea Institute of Science and Technology, Seoul 136-792, Korea. He is now with the Korea Photonics Technology Institute, Gwangju 500-210, Korea. W.-J. Choi is with the Nano-device Research Center, Korea Institute of Science and Technology, Seoul 136-792, Korea. D.-H. Kim, K.-C. Jang, and K.-S. Seo are with the School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea. Digital Object Identifier 10.1109/LPT.2003.811339 Fig. 1. Epitaxial structure of the InAlAs–InGaAs metamorphic HEMT on GaAs substrate with the composite channels.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering