High-Performance 2D p-Type Transistors Based on GaSe Layers: An Ab Initio Study

Agnieszka Kuc, Teresa Cusati, Elias Dib, Augusto F. Oliveira, Alessandro Fortunelli, Giuseppe Iannaccone, Thomas Heine, Gianluca Fiori

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)
Original languageEnglish
Article number1600399
JournalAdvanced Electronic Materials
Issue number2
Publication statusPublished - 2017 Feb 1

Bibliographical note

Funding Information:
The authors gratefully acknowledge the support from the Deutsche Forschungsgemeinschaft (HE 3543/18-1), the European Commission (FP7-PEOPLE-2012-ITN MoWSeS, GA 317451), and European Commission under Contract No. 696656 (Project “GRAPHENE FLAGSHIP”). The authors thank Mr. Vladimir Bacic for his help with Quantum Espresso input files. A.K. and T.H. gratefully acknowledge supercomputer time at ZIH Dresden.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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