High-Performance 2D p-Type Transistors Based on GaSe Layers: An Ab Initio Study

Agnieszka Kuc, Teresa Cusati, Elias Dib, Augusto F. Oliveira, Alessandro Fortunelli, Giuseppe Iannaccone, Thomas Heine, Gianluca Fiori

Research output: Contribution to journalArticle

9 Citations (Scopus)
Original languageEnglish
Article number1600399
JournalAdvanced Electronic Materials
Volume3
Issue number2
DOIs
Publication statusPublished - 2017 Feb 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Kuc, A., Cusati, T., Dib, E., Oliveira, A. F., Fortunelli, A., Iannaccone, G., Heine, T., & Fiori, G. (2017). High-Performance 2D p-Type Transistors Based on GaSe Layers: An Ab Initio Study. Advanced Electronic Materials, 3(2), [1600399]. https://doi.org/10.1002/aelm.201600399