High-performance a MoS2 nanosheet-based nonvolatile memory transistor with a ferroelectric polymer and graphene source-drain electrode

Young Tack Lee, Do Kyung Hwang, Seongil Im

Research output: Contribution to journalLetter

7 Citations (Scopus)

Abstract

Two-dimensional (2D) van der Waals (vdWs) materials are a class of new materials due to their unique physical properties. Of the many 2D vdWs materials, molybdenum disulfide (MoS2) is a representative n-type transition-metal dichalcogenide (TMD) semiconductor. Here, we report on a high-performance MoS2 nanosheet-based nonvolatile memory transistor with a poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric top gate insulator. In order to enhance the ohmic contact property, we use graphene flakes as source/drain electrodes prepared by using the direct imprinting method with an elastomer stamp. The MoS2 ferroelectric field-effect transistor (FeFET) shows the highest linear electron mobility value of 175 cm2/Vs with a high on/off current ratio of more than 107, and a very clear memory window of more than 15 V. The program and erase dynamics and the static retention properties are also well demonstrated.

Original languageEnglish
Pages (from-to)1499-1503
Number of pages5
JournalJournal of the Korean Physical Society
Volume67
Issue number9
DOIs
Publication statusPublished - 2015 Nov 1

Fingerprint

graphene
transistors
molybdenum disulfides
electrodes
flakes
polymers
elastomers
electron mobility
electric contacts
field effect transistors
physical properties
transition metals
insulators

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{3db73a5bb5de47778d6b774b8b3e1acf,
title = "High-performance a MoS2 nanosheet-based nonvolatile memory transistor with a ferroelectric polymer and graphene source-drain electrode",
abstract = "Two-dimensional (2D) van der Waals (vdWs) materials are a class of new materials due to their unique physical properties. Of the many 2D vdWs materials, molybdenum disulfide (MoS2) is a representative n-type transition-metal dichalcogenide (TMD) semiconductor. Here, we report on a high-performance MoS2 nanosheet-based nonvolatile memory transistor with a poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric top gate insulator. In order to enhance the ohmic contact property, we use graphene flakes as source/drain electrodes prepared by using the direct imprinting method with an elastomer stamp. The MoS2 ferroelectric field-effect transistor (FeFET) shows the highest linear electron mobility value of 175 cm2/Vs with a high on/off current ratio of more than 107, and a very clear memory window of more than 15 V. The program and erase dynamics and the static retention properties are also well demonstrated.",
author = "Lee, {Young Tack} and Hwang, {Do Kyung} and Seongil Im",
year = "2015",
month = "11",
day = "1",
doi = "10.3938/jkps.67.1499",
language = "English",
volume = "67",
pages = "1499--1503",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "9",

}

High-performance a MoS2 nanosheet-based nonvolatile memory transistor with a ferroelectric polymer and graphene source-drain electrode. / Lee, Young Tack; Hwang, Do Kyung; Im, Seongil.

In: Journal of the Korean Physical Society, Vol. 67, No. 9, 01.11.2015, p. 1499-1503.

Research output: Contribution to journalLetter

TY - JOUR

T1 - High-performance a MoS2 nanosheet-based nonvolatile memory transistor with a ferroelectric polymer and graphene source-drain electrode

AU - Lee, Young Tack

AU - Hwang, Do Kyung

AU - Im, Seongil

PY - 2015/11/1

Y1 - 2015/11/1

N2 - Two-dimensional (2D) van der Waals (vdWs) materials are a class of new materials due to their unique physical properties. Of the many 2D vdWs materials, molybdenum disulfide (MoS2) is a representative n-type transition-metal dichalcogenide (TMD) semiconductor. Here, we report on a high-performance MoS2 nanosheet-based nonvolatile memory transistor with a poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric top gate insulator. In order to enhance the ohmic contact property, we use graphene flakes as source/drain electrodes prepared by using the direct imprinting method with an elastomer stamp. The MoS2 ferroelectric field-effect transistor (FeFET) shows the highest linear electron mobility value of 175 cm2/Vs with a high on/off current ratio of more than 107, and a very clear memory window of more than 15 V. The program and erase dynamics and the static retention properties are also well demonstrated.

AB - Two-dimensional (2D) van der Waals (vdWs) materials are a class of new materials due to their unique physical properties. Of the many 2D vdWs materials, molybdenum disulfide (MoS2) is a representative n-type transition-metal dichalcogenide (TMD) semiconductor. Here, we report on a high-performance MoS2 nanosheet-based nonvolatile memory transistor with a poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric top gate insulator. In order to enhance the ohmic contact property, we use graphene flakes as source/drain electrodes prepared by using the direct imprinting method with an elastomer stamp. The MoS2 ferroelectric field-effect transistor (FeFET) shows the highest linear electron mobility value of 175 cm2/Vs with a high on/off current ratio of more than 107, and a very clear memory window of more than 15 V. The program and erase dynamics and the static retention properties are also well demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=84947445985&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84947445985&partnerID=8YFLogxK

U2 - 10.3938/jkps.67.1499

DO - 10.3938/jkps.67.1499

M3 - Letter

VL - 67

SP - 1499

EP - 1503

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 9

ER -