High-performance a MoS2 nanosheet-based nonvolatile memory transistor with a ferroelectric polymer and graphene source-drain electrode

Young Tack Lee, Do Kyung Hwang, Seongil Im

Research output: Contribution to journalLetter

8 Citations (Scopus)

Abstract

Two-dimensional (2D) van der Waals (vdWs) materials are a class of new materials due to their unique physical properties. Of the many 2D vdWs materials, molybdenum disulfide (MoS2) is a representative n-type transition-metal dichalcogenide (TMD) semiconductor. Here, we report on a high-performance MoS2 nanosheet-based nonvolatile memory transistor with a poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric top gate insulator. In order to enhance the ohmic contact property, we use graphene flakes as source/drain electrodes prepared by using the direct imprinting method with an elastomer stamp. The MoS2 ferroelectric field-effect transistor (FeFET) shows the highest linear electron mobility value of 175 cm2/Vs with a high on/off current ratio of more than 107, and a very clear memory window of more than 15 V. The program and erase dynamics and the static retention properties are also well demonstrated.

Original languageEnglish
Pages (from-to)1499-1503
Number of pages5
JournalJournal of the Korean Physical Society
Volume67
Issue number9
DOIs
Publication statusPublished - 2015 Nov 1

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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