High-Performance, Air-Stable, Top-Gate, p-Channel WSe2 Field-Effect Transistor with Fluoropolymer Buffer Layer

Seyed Hossein Hosseini Shokouh, Pyo Jin Jeon, Atiye Pezeshki, Kyunghee Choi, Hee Sung Lee, Jin Sung Kim, Eun Young Park, Seongil Im

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

High-performance, air-stable, p-channel WSe2 top-gate field-effect transistors (FETs) using a bilayer gate dielectric composed of high- and low-k dielectrics are reported. Using only a high-k Al2O3 as the top-gate dielectric generally degrades the electrical properties of p-channel WSe2, therefore, a thin fluoropolymer (Cytop) as a buffer layer to protect the 2D channel from high-k oxide forming is deposited. As a result, a top-gate-patterned 2D WSe2 FET is realized. The top-gate p-channel WSe2 FET demonstrates a high hole mobility of 100 cm2 V-1 s-1 and a ION/IOFF ratio > 107 at low gate voltages (VGS ca. -4 V) and a drain voltage (VDS) of -1 V on a glass substrate. Furthermore, the top-gate FET shows a very good stability in ambient air with a relative humidity of 45% for 7 days after device fabrication. Our approach of creating a high-k oxide/low-k organic bilayer dielectric is advantageous over single-layer high-k dielectrics for top-gate p-channel WSe2 FETs, which will lead the way toward future electronic nanodevices and their integration.

Original languageEnglish
Pages (from-to)7208-7214
Number of pages7
JournalAdvanced Functional Materials
Volume25
Issue number46
DOIs
Publication statusPublished - 2015 Dec 9

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'High-Performance, Air-Stable, Top-Gate, p-Channel WSe<sub>2</sub> Field-Effect Transistor with Fluoropolymer Buffer Layer'. Together they form a unique fingerprint.

  • Cite this