High-Performance, Air-Stable, Top-Gate, p-Channel WSe2 Field-Effect Transistor with Fluoropolymer Buffer Layer

Seyed Hossein Hosseini Shokouh, Pyo Jin Jeon, Atiye Pezeshki, Kyunghee Choi, Hee Sung Lee, Jin Sung Kim, Eun Young Park, Seongil Im

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

High-performance, air-stable, p-channel WSe2 top-gate field-effect transistors (FETs) using a bilayer gate dielectric composed of high- and low-k dielectrics are reported. Using only a high-k Al2O3 as the top-gate dielectric generally degrades the electrical properties of p-channel WSe2, therefore, a thin fluoropolymer (Cytop) as a buffer layer to protect the 2D channel from high-k oxide forming is deposited. As a result, a top-gate-patterned 2D WSe2 FET is realized. The top-gate p-channel WSe2 FET demonstrates a high hole mobility of 100 cm2 V-1 s-1 and a ION/IOFF ratio > 107 at low gate voltages (VGS ca. -4 V) and a drain voltage (VDS) of -1 V on a glass substrate. Furthermore, the top-gate FET shows a very good stability in ambient air with a relative humidity of 45% for 7 days after device fabrication. Our approach of creating a high-k oxide/low-k organic bilayer dielectric is advantageous over single-layer high-k dielectrics for top-gate p-channel WSe2 FETs, which will lead the way toward future electronic nanodevices and their integration.

Original languageEnglish
Pages (from-to)7208-7214
Number of pages7
JournalAdvanced Functional Materials
Volume25
Issue number46
DOIs
Publication statusPublished - 2015 Dec 9

Fingerprint

Gates (transistor)
fluoropolymers
Fluorine containing polymers
Buffer layers
Field effect transistors
field effect transistors
buffers
Gate dielectrics
Oxides
air
Air
Hole mobility
Electric potential
Atmospheric humidity
Electric properties
Fabrication
Glass
Substrates
oxides
hole mobility

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Shokouh, Seyed Hossein Hosseini ; Jeon, Pyo Jin ; Pezeshki, Atiye ; Choi, Kyunghee ; Lee, Hee Sung ; Kim, Jin Sung ; Park, Eun Young ; Im, Seongil. / High-Performance, Air-Stable, Top-Gate, p-Channel WSe2 Field-Effect Transistor with Fluoropolymer Buffer Layer. In: Advanced Functional Materials. 2015 ; Vol. 25, No. 46. pp. 7208-7214.
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High-Performance, Air-Stable, Top-Gate, p-Channel WSe2 Field-Effect Transistor with Fluoropolymer Buffer Layer. / Shokouh, Seyed Hossein Hosseini; Jeon, Pyo Jin; Pezeshki, Atiye; Choi, Kyunghee; Lee, Hee Sung; Kim, Jin Sung; Park, Eun Young; Im, Seongil.

In: Advanced Functional Materials, Vol. 25, No. 46, 09.12.2015, p. 7208-7214.

Research output: Contribution to journalArticle

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AU - Im, Seongil

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