High performance and high stability low temperature aqueous solution-derived Li-Zr co-doped ZnO thin film transistors

Yangho Jung, Wooseok Yang, Chang Young Koo, Keunkyu Song, Jooho Moon

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

Highly stable and high performance solution-processed amorphous oxide semiconductor thin film transistors (TFTs) were produced using a Li and Zr co-doped ZnO-based aqueous solution. Li and Zr co-doping at the appropriate amounts enhanced the oxide film quality in terms of enhanced oxygen bonding and reduced defect sites. The 0.5 mol% Li and 1.0 mol% Zr co-doped ZnO TFTs annealed at 320 °C exhibited noticeably lower threshold voltage shifts of 3.54 V under positive bias stress and -2.07 V under negative bias temperature stress than the non-doped ZnO TFTs. The transistors revealed a good device mobility performance of 5.39 cm 2 V -1 s -1 and an on/off current ratio of 10 8 when annealed at 320 °C, compared to a mobility performance of 2.86 cm 2 V -1 s -1 and an on/off current ratio of ∼10 7 when annealed at 270 °C. Our results suggest that Li and Zr co-doping can be a useful technique to produce more reliable and low temperature solution-processed oxide semiconductor TFTs.

Original languageEnglish
Pages (from-to)5390-5397
Number of pages8
JournalJournal of Materials Chemistry
Volume22
Issue number12
DOIs
Publication statusPublished - 2012 Mar 28

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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