High-performance and low-voltage pentacene thin film transistors fabricated on the flexible substrate

Chang Su Kim, Sung Jin Jo, Jong Bok Kim, Seung Yoon Ryu, Joo Hyon Noh, Hong Koo Baik, Se Jong Lee, Kie Moon Song

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report on the fabrication of low operating voltage pentacene thin film transistors with PVP (poly-4-vinylphenol)/CeO2-SiO2/PVP triple dielectric layers on a flexible substrate. Our triple dielectric layers exhibited a markedly reduced leakage current characteristic and a relatively high capacitance. The field effect mobility, on/off current ratio and subthreshold slope obtained from pentacene thin film transistors were 0.67 cm2 V s-1, 105 and 0.36 V dec-1, respectively. It was demonstrated that the spin-coating polymer layer can be used to planarize the surface irregularities and to improve the dielectric and device properties.

Original languageEnglish
Article number002
Pages (from-to)691-694
Number of pages4
JournalSemiconductor Science and Technology
Volume22
Issue number7
DOIs
Publication statusPublished - 2007 Jul 1

Fingerprint

Thin film transistors
low voltage
transistors
Electric potential
Substrates
thin films
Spin coating
irregularities
Leakage currents
coating
dielectric properties
Polymers
leakage
Capacitance
capacitance
slopes
Fabrication
fabrication
polymers
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kim, Chang Su ; Jo, Sung Jin ; Kim, Jong Bok ; Ryu, Seung Yoon ; Noh, Joo Hyon ; Baik, Hong Koo ; Lee, Se Jong ; Song, Kie Moon. / High-performance and low-voltage pentacene thin film transistors fabricated on the flexible substrate. In: Semiconductor Science and Technology. 2007 ; Vol. 22, No. 7. pp. 691-694.
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abstract = "We report on the fabrication of low operating voltage pentacene thin film transistors with PVP (poly-4-vinylphenol)/CeO2-SiO2/PVP triple dielectric layers on a flexible substrate. Our triple dielectric layers exhibited a markedly reduced leakage current characteristic and a relatively high capacitance. The field effect mobility, on/off current ratio and subthreshold slope obtained from pentacene thin film transistors were 0.67 cm2 V s-1, 105 and 0.36 V dec-1, respectively. It was demonstrated that the spin-coating polymer layer can be used to planarize the surface irregularities and to improve the dielectric and device properties.",
author = "Kim, {Chang Su} and Jo, {Sung Jin} and Kim, {Jong Bok} and Ryu, {Seung Yoon} and Noh, {Joo Hyon} and Baik, {Hong Koo} and Lee, {Se Jong} and Song, {Kie Moon}",
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High-performance and low-voltage pentacene thin film transistors fabricated on the flexible substrate. / Kim, Chang Su; Jo, Sung Jin; Kim, Jong Bok; Ryu, Seung Yoon; Noh, Joo Hyon; Baik, Hong Koo; Lee, Se Jong; Song, Kie Moon.

In: Semiconductor Science and Technology, Vol. 22, No. 7, 002, 01.07.2007, p. 691-694.

Research output: Contribution to journalArticle

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T1 - High-performance and low-voltage pentacene thin film transistors fabricated on the flexible substrate

AU - Kim, Chang Su

AU - Jo, Sung Jin

AU - Kim, Jong Bok

AU - Ryu, Seung Yoon

AU - Noh, Joo Hyon

AU - Baik, Hong Koo

AU - Lee, Se Jong

AU - Song, Kie Moon

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AB - We report on the fabrication of low operating voltage pentacene thin film transistors with PVP (poly-4-vinylphenol)/CeO2-SiO2/PVP triple dielectric layers on a flexible substrate. Our triple dielectric layers exhibited a markedly reduced leakage current characteristic and a relatively high capacitance. The field effect mobility, on/off current ratio and subthreshold slope obtained from pentacene thin film transistors were 0.67 cm2 V s-1, 105 and 0.36 V dec-1, respectively. It was demonstrated that the spin-coating polymer layer can be used to planarize the surface irregularities and to improve the dielectric and device properties.

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