High-performance and low-voltage pentacene thin film transistors fabricated on the flexible substrate

Chang Su Kim, Sung Jin Jo, Jong Bok Kim, Seung Yoon Ryu, Joo Hyon Noh, Hong Koo Baik, Se Jong Lee, Kie Moon Song

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report on the fabrication of low operating voltage pentacene thin film transistors with PVP (poly-4-vinylphenol)/CeO2-SiO2/PVP triple dielectric layers on a flexible substrate. Our triple dielectric layers exhibited a markedly reduced leakage current characteristic and a relatively high capacitance. The field effect mobility, on/off current ratio and subthreshold slope obtained from pentacene thin film transistors were 0.67 cm2 V s-1, 105 and 0.36 V dec-1, respectively. It was demonstrated that the spin-coating polymer layer can be used to planarize the surface irregularities and to improve the dielectric and device properties.

Original languageEnglish
Article number002
Pages (from-to)691-694
Number of pages4
JournalSemiconductor Science and Technology
Volume22
Issue number7
DOIs
Publication statusPublished - 2007 Jul 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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