We experimentally demonstrated high performance and self-rectifying hafnia based ferroelectric tunnel junction (FTJ) using stress engineering, diffusion barrier technology, and imprint field effect for neuromorphic computing and logic in memory application. In TiN/HZO/TaN/W stacked FTJ, W bottom electrode which has low thermal expansion coefficient enables to stabilize the ferroelectric o-phase even at ultra-thin HZO film, and TaN layer suppresses the diffusion of W atoms into ferroelectric HZO layer, resulting in reduction of leakage current and giant TER value of 100. In addition, highly asymmetric switching characteristics with rectifying ratio of 1000 is achieved using imprint field effect induced by positive fixed charges nearby bottom interface. The proposed device provides a viable solution for high performance, low power and high-density synaptic devices and TCAM applications.
|Title of host publication||2021 IEEE International Electron Devices Meeting, IEDM 2021|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Publication status||Published - 2021|
|Event||2021 IEEE International Electron Devices Meeting, IEDM 2021 - San Francisco, United States|
Duration: 2021 Dec 11 → 2021 Dec 16
|Name||Technical Digest - International Electron Devices Meeting, IEDM|
|Conference||2021 IEEE International Electron Devices Meeting, IEDM 2021|
|Period||21/12/11 → 21/12/16|
Bibliographical noteFunding Information:
This work was supported by Grant Nos. NRF-2019M3F3A1A02071966, NRF-2020M3F3A2A01081898 and NRF-2020M3F3A2A02082436. REFERENCES  S. S. Cheema, et al. cond-mat. mtrl-sci .06182 (2020).  Y. Goh, et al. Applied Physics Letters 117.24 (2020): 242901.  B. Max, et al. IEEE JEDS, 7 (2019): 1175-1181.  A. M. Zidan, et al. Nat. Electron. 1 (2018), 411-420.  C. Li, et al. Nat. Electron. 1 (2018), 52-59.  S. Ambrogio, et al. Nature, 558 (2018). 60-67.  R. Berdan, et al. Nature Electronics 3.5 (2020): 259-266.  B. Song, et al. IEEE Transactions on Circuits and Systems II: Express Briefs, 64.6 (2016): 700-704.
© 2021 IEEE.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering