High performance and stability of double-gate HfInZnO thin-film transistors under illumination

Joon Seok Park, Kyoung Seok Son, Tae Sang Kim, Ji Sim Jung, Kwang Hee Lee, Wan Joo Maeng, Hyun Suk Kim, Eok Su Kim, Kyung Bae Park, Jong Baek Seon, Jang Yeon Kwon, Myung Kwan Ryu, Sangyun Lee

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Hafnium indium zinc oxide thin-film transistors (TFTs) with a double-gate structure were evaluated for the first time. Compared with devices with a single bottom gate, TFTs with an additional top gate exhibit improved subthreshold swing, threshold voltage, and field-effect mobility, as well as smaller subthreshold currents upon exposure to visible light. This phenomenon is attributed to the more effective suppression of excess photocurrents by the application of a double-gate structure. Negative-bias stress experiments under illumination indicate that the double-gate TFT exhibits very high stability compared with the device with a single-gate configuration.

Original languageEnglish
Article number5503991
Pages (from-to)960-962
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number9
DOIs
Publication statusPublished - 2010 Sep 1

Fingerprint

Thin film transistors
Lighting
Hafnium
Zinc Oxide
Indium
Zinc oxide
Photocurrents
Threshold voltage
Oxide films
Experiments

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Park, J. S., Son, K. S., Kim, T. S., Jung, J. S., Lee, K. H., Maeng, W. J., ... Lee, S. (2010). High performance and stability of double-gate HfInZnO thin-film transistors under illumination. IEEE Electron Device Letters, 31(9), 960-962. [5503991]. https://doi.org/10.1109/LED.2010.2051407
Park, Joon Seok ; Son, Kyoung Seok ; Kim, Tae Sang ; Jung, Ji Sim ; Lee, Kwang Hee ; Maeng, Wan Joo ; Kim, Hyun Suk ; Kim, Eok Su ; Park, Kyung Bae ; Seon, Jong Baek ; Kwon, Jang Yeon ; Ryu, Myung Kwan ; Lee, Sangyun. / High performance and stability of double-gate HfInZnO thin-film transistors under illumination. In: IEEE Electron Device Letters. 2010 ; Vol. 31, No. 9. pp. 960-962.
@article{a9affeab523740ea82d5d43117c87b83,
title = "High performance and stability of double-gate HfInZnO thin-film transistors under illumination",
abstract = "Hafnium indium zinc oxide thin-film transistors (TFTs) with a double-gate structure were evaluated for the first time. Compared with devices with a single bottom gate, TFTs with an additional top gate exhibit improved subthreshold swing, threshold voltage, and field-effect mobility, as well as smaller subthreshold currents upon exposure to visible light. This phenomenon is attributed to the more effective suppression of excess photocurrents by the application of a double-gate structure. Negative-bias stress experiments under illumination indicate that the double-gate TFT exhibits very high stability compared with the device with a single-gate configuration.",
author = "Park, {Joon Seok} and Son, {Kyoung Seok} and Kim, {Tae Sang} and Jung, {Ji Sim} and Lee, {Kwang Hee} and Maeng, {Wan Joo} and Kim, {Hyun Suk} and Kim, {Eok Su} and Park, {Kyung Bae} and Seon, {Jong Baek} and Kwon, {Jang Yeon} and Ryu, {Myung Kwan} and Sangyun Lee",
year = "2010",
month = "9",
day = "1",
doi = "10.1109/LED.2010.2051407",
language = "English",
volume = "31",
pages = "960--962",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",

}

Park, JS, Son, KS, Kim, TS, Jung, JS, Lee, KH, Maeng, WJ, Kim, HS, Kim, ES, Park, KB, Seon, JB, Kwon, JY, Ryu, MK & Lee, S 2010, 'High performance and stability of double-gate HfInZnO thin-film transistors under illumination', IEEE Electron Device Letters, vol. 31, no. 9, 5503991, pp. 960-962. https://doi.org/10.1109/LED.2010.2051407

High performance and stability of double-gate HfInZnO thin-film transistors under illumination. / Park, Joon Seok; Son, Kyoung Seok; Kim, Tae Sang; Jung, Ji Sim; Lee, Kwang Hee; Maeng, Wan Joo; Kim, Hyun Suk; Kim, Eok Su; Park, Kyung Bae; Seon, Jong Baek; Kwon, Jang Yeon; Ryu, Myung Kwan; Lee, Sangyun.

In: IEEE Electron Device Letters, Vol. 31, No. 9, 5503991, 01.09.2010, p. 960-962.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High performance and stability of double-gate HfInZnO thin-film transistors under illumination

AU - Park, Joon Seok

AU - Son, Kyoung Seok

AU - Kim, Tae Sang

AU - Jung, Ji Sim

AU - Lee, Kwang Hee

AU - Maeng, Wan Joo

AU - Kim, Hyun Suk

AU - Kim, Eok Su

AU - Park, Kyung Bae

AU - Seon, Jong Baek

AU - Kwon, Jang Yeon

AU - Ryu, Myung Kwan

AU - Lee, Sangyun

PY - 2010/9/1

Y1 - 2010/9/1

N2 - Hafnium indium zinc oxide thin-film transistors (TFTs) with a double-gate structure were evaluated for the first time. Compared with devices with a single bottom gate, TFTs with an additional top gate exhibit improved subthreshold swing, threshold voltage, and field-effect mobility, as well as smaller subthreshold currents upon exposure to visible light. This phenomenon is attributed to the more effective suppression of excess photocurrents by the application of a double-gate structure. Negative-bias stress experiments under illumination indicate that the double-gate TFT exhibits very high stability compared with the device with a single-gate configuration.

AB - Hafnium indium zinc oxide thin-film transistors (TFTs) with a double-gate structure were evaluated for the first time. Compared with devices with a single bottom gate, TFTs with an additional top gate exhibit improved subthreshold swing, threshold voltage, and field-effect mobility, as well as smaller subthreshold currents upon exposure to visible light. This phenomenon is attributed to the more effective suppression of excess photocurrents by the application of a double-gate structure. Negative-bias stress experiments under illumination indicate that the double-gate TFT exhibits very high stability compared with the device with a single-gate configuration.

UR - http://www.scopus.com/inward/record.url?scp=77956176286&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77956176286&partnerID=8YFLogxK

U2 - 10.1109/LED.2010.2051407

DO - 10.1109/LED.2010.2051407

M3 - Article

AN - SCOPUS:77956176286

VL - 31

SP - 960

EP - 962

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 9

M1 - 5503991

ER -