High performance and stability of double-gate HfInZnO thin-film transistors under illumination

Joon Seok Park, Kyoung Seok Son, Tae Sang Kim, Ji Sim Jung, Kwang Hee Lee, Wan Joo Maeng, Hyun Suk Kim, Eok Su Kim, Kyung Bae Park, Jong Baek Seon, Jang Yeon Kwon, Myung Kwan Ryu, Sangyun Lee

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17 Citations (Scopus)

Abstract

Hafnium indium zinc oxide thin-film transistors (TFTs) with a double-gate structure were evaluated for the first time. Compared with devices with a single bottom gate, TFTs with an additional top gate exhibit improved subthreshold swing, threshold voltage, and field-effect mobility, as well as smaller subthreshold currents upon exposure to visible light. This phenomenon is attributed to the more effective suppression of excess photocurrents by the application of a double-gate structure. Negative-bias stress experiments under illumination indicate that the double-gate TFT exhibits very high stability compared with the device with a single-gate configuration.

Original languageEnglish
Article number5503991
Pages (from-to)960-962
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number9
DOIs
Publication statusPublished - 2010 Sep 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Park, J. S., Son, K. S., Kim, T. S., Jung, J. S., Lee, K. H., Maeng, W. J., Kim, H. S., Kim, E. S., Park, K. B., Seon, J. B., Kwon, J. Y., Ryu, M. K., & Lee, S. (2010). High performance and stability of double-gate HfInZnO thin-film transistors under illumination. IEEE Electron Device Letters, 31(9), 960-962. [5503991]. https://doi.org/10.1109/LED.2010.2051407