High-performance and stable transparent HfInZnO thin-film transistors with a double-etch-stopper layer

Joon Seok Park, Tae Sang Kim, Kyoung Seok Son, Kwang Hee Lee, Ji Sim Jung, Wan Joo Maeng, Hyun Suk Kim, Eok Su Kim, Kyung Bae Park, Jong Baek Seon, Jang Yeon Kwon, Myung Kwan Ryu, Sangyoon Lee

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Abstract

Transparent hafnium indium zinc oxide thin-film transistors adopting single- and double-etch-stopper layers were evaluated. Compared to devices with a single SiOx etch stopper (ES) grown at 150 °C, a double ES with a second SiOx film grown at 350 °C provides a superior device performance such as improved subthreshold swing, threshold voltage, field effect mobility, and higher stability under a negative bias stress. The stretched-exponential analyses of the bias stress results indicate that the denser high-temperature SiOx protects more effectively the underlying semiconductor during the source/drain etch process and suppresses the generation of defect states therein.

Original languageEnglish
Article number5565390
Pages (from-to)1248-1250
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number11
DOIs
Publication statusPublished - 2010 Nov 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Park, J. S., Kim, T. S., Son, K. S., Lee, K. H., Jung, J. S., Maeng, W. J., Kim, H. S., Kim, E. S., Park, K. B., Seon, J. B., Kwon, J. Y., Ryu, M. K., & Lee, S. (2010). High-performance and stable transparent HfInZnO thin-film transistors with a double-etch-stopper layer. IEEE Electron Device Letters, 31(11), 1248-1250. [5565390]. https://doi.org/10.1109/LED.2010.2065793