Transparent hafnium indium zinc oxide thin-film transistors adopting single- and double-etch-stopper layers were evaluated. Compared to devices with a single SiOx etch stopper (ES) grown at 150 °C, a double ES with a second SiOx film grown at 350 °C provides a superior device performance such as improved subthreshold swing, threshold voltage, field effect mobility, and higher stability under a negative bias stress. The stretched-exponential analyses of the bias stress results indicate that the denser high-temperature SiOx protects more effectively the underlying semiconductor during the source/drain etch process and suppresses the generation of defect states therein.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering