High-performance electroplated solenoid-type integrated inductor (SI2) for RF applications using simple 3D surface micromachining technology

Jun Bo Yoon, Bon Kee Kim, Chul Hi Han, Euisik Yoon, Kwyro Lee, Choong Ki Kim

Research output: Contribution to journalConference article

37 Citations (Scopus)

Abstract

Electroplated solenoid-type integrated inductors (SI2s) have been demonstrated to have high performance and small area occupation for GHz applications, using a new, simple, and highly adaptable 3D surface micromachining technology. The method utilizes simply modified conventional photolithography and well-established electroplating at a low process temperature (<120 °C), so that the post-IC process and batch fabrication are possible. We have fabricated a 20-turn SI2 with an inductance of 2.5 nH, a peak Q-factor of 19 at 5.5 GHz, and the surface area occupation of 800 μm by 90 μm excluding pads (50 nH/mm2), from the entirely unoptimized initial fabrication on a glass substrate. Also, a 10 nH and a peak Q of 12.5 at 2.3 GHz have been obtained from an 80-turn SI2 (27 nH/mm2).

Original languageEnglish
Pages (from-to)544-547
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1998 Dec 1
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1998 Dec 61998 Dec 9

Fingerprint

Surface micromachining
Solenoids
inductors
micromachining
solenoids
occupation
Fabrication
fabrication
electroplating
Electroplating
Photolithography
photolithography
inductance
Inductance
Q factors
Glass
glass
Substrates
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "High-performance electroplated solenoid-type integrated inductor (SI2) for RF applications using simple 3D surface micromachining technology",
abstract = "Electroplated solenoid-type integrated inductors (SI2s) have been demonstrated to have high performance and small area occupation for GHz applications, using a new, simple, and highly adaptable 3D surface micromachining technology. The method utilizes simply modified conventional photolithography and well-established electroplating at a low process temperature (<120 °C), so that the post-IC process and batch fabrication are possible. We have fabricated a 20-turn SI2 with an inductance of 2.5 nH, a peak Q-factor of 19 at 5.5 GHz, and the surface area occupation of 800 μm by 90 μm excluding pads (50 nH/mm2), from the entirely unoptimized initial fabrication on a glass substrate. Also, a 10 nH and a peak Q of 12.5 at 2.3 GHz have been obtained from an 80-turn SI2 (27 nH/mm2).",
author = "Yoon, {Jun Bo} and Kim, {Bon Kee} and Han, {Chul Hi} and Euisik Yoon and Kwyro Lee and Kim, {Choong Ki}",
year = "1998",
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language = "English",
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High-performance electroplated solenoid-type integrated inductor (SI2) for RF applications using simple 3D surface micromachining technology. / Yoon, Jun Bo; Kim, Bon Kee; Han, Chul Hi; Yoon, Euisik; Lee, Kwyro; Kim, Choong Ki.

In: Technical Digest - International Electron Devices Meeting, 01.12.1998, p. 544-547.

Research output: Contribution to journalConference article

TY - JOUR

T1 - High-performance electroplated solenoid-type integrated inductor (SI2) for RF applications using simple 3D surface micromachining technology

AU - Yoon, Jun Bo

AU - Kim, Bon Kee

AU - Han, Chul Hi

AU - Yoon, Euisik

AU - Lee, Kwyro

AU - Kim, Choong Ki

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Electroplated solenoid-type integrated inductors (SI2s) have been demonstrated to have high performance and small area occupation for GHz applications, using a new, simple, and highly adaptable 3D surface micromachining technology. The method utilizes simply modified conventional photolithography and well-established electroplating at a low process temperature (<120 °C), so that the post-IC process and batch fabrication are possible. We have fabricated a 20-turn SI2 with an inductance of 2.5 nH, a peak Q-factor of 19 at 5.5 GHz, and the surface area occupation of 800 μm by 90 μm excluding pads (50 nH/mm2), from the entirely unoptimized initial fabrication on a glass substrate. Also, a 10 nH and a peak Q of 12.5 at 2.3 GHz have been obtained from an 80-turn SI2 (27 nH/mm2).

AB - Electroplated solenoid-type integrated inductors (SI2s) have been demonstrated to have high performance and small area occupation for GHz applications, using a new, simple, and highly adaptable 3D surface micromachining technology. The method utilizes simply modified conventional photolithography and well-established electroplating at a low process temperature (<120 °C), so that the post-IC process and batch fabrication are possible. We have fabricated a 20-turn SI2 with an inductance of 2.5 nH, a peak Q-factor of 19 at 5.5 GHz, and the surface area occupation of 800 μm by 90 μm excluding pads (50 nH/mm2), from the entirely unoptimized initial fabrication on a glass substrate. Also, a 10 nH and a peak Q of 12.5 at 2.3 GHz have been obtained from an 80-turn SI2 (27 nH/mm2).

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JO - Technical Digest - International Electron Devices Meeting

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