High-performance electroplated solenoid-type integrated inductor (SI2) for RF applications using simple 3D surface micromachining technology

Jun Bo Yoon, Bon Kee Kim, Chul Hi Han, Euisik Yoon, Kwyro Lee, Choong Ki Kim

Research output: Contribution to journalConference articlepeer-review

37 Citations (Scopus)

Abstract

Electroplated solenoid-type integrated inductors (SI2s) have been demonstrated to have high performance and small area occupation for GHz applications, using a new, simple, and highly adaptable 3D surface micromachining technology. The method utilizes simply modified conventional photolithography and well-established electroplating at a low process temperature (<120 °C), so that the post-IC process and batch fabrication are possible. We have fabricated a 20-turn SI2 with an inductance of 2.5 nH, a peak Q-factor of 19 at 5.5 GHz, and the surface area occupation of 800 μm by 90 μm excluding pads (50 nH/mm2), from the entirely unoptimized initial fabrication on a glass substrate. Also, a 10 nH and a peak Q of 12.5 at 2.3 GHz have been obtained from an 80-turn SI2 (27 nH/mm2).

Original languageEnglish
Pages (from-to)544-547
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1998
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1998 Dec 61998 Dec 9

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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