Abstract
Electroplated solenoid-type integrated inductors (SI2s) have been demonstrated to have high performance and small area occupation for GHz applications, using a new, simple, and highly adaptable 3D surface micromachining technology. The method utilizes simply modified conventional photolithography and well-established electroplating at a low process temperature (<120 °C), so that the post-IC process and batch fabrication are possible. We have fabricated a 20-turn SI2 with an inductance of 2.5 nH, a peak Q-factor of 19 at 5.5 GHz, and the surface area occupation of 800 μm by 90 μm excluding pads (50 nH/mm2), from the entirely unoptimized initial fabrication on a glass substrate. Also, a 10 nH and a peak Q of 12.5 at 2.3 GHz have been obtained from an 80-turn SI2 (27 nH/mm2).
Original language | English |
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Pages (from-to) | 544-547 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting |
Publication status | Published - 1998 |
Event | Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 1998 Dec 6 → 1998 Dec 9 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry