High-performance enhancement-mode In0.53Ga0.47As surface channels n-MOSFET with thin In0.2Ga0.8As capping and laser anneal effect

I. Ok, P. Y. Hung, D. Veksler, J. Oh, P. Majhi R. Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work we have investigated the effect of thin In02Ga08As capping layer and pulsed laser annealing (PLA) on self-aligned enhancement mode n-channel In0.53Ga0.47As metal-oxide-semiconductor field effect transistor (MOSFET). We present the electrical and material characteristics of TaN/ZrO2/In0.2Ga0.8As/ In0.53Ga0.47As n-MOSFET with atomic layer deposition (ALD) ZrO2. Electrical characteristics with thin capacitance equivalent thickness (CET) (∼0.8 nm), and improved drain current with thin capping layer were obtained. N-channel high-k InGaAs-MOSFETs with good transistor behavior, i.e. improved drain current after additional pulsed laser anneal with RTA anneal, on In0.53Ga0.47As substrate have also been demonstrated.

Original languageEnglish
Title of host publication2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010
Pages166-169
Number of pages4
DOIs
Publication statusPublished - 2010 Dec 15
Event2010 European Solid State Device Research Conference, ESSDERC 2010 - Sevilla, Spain
Duration: 2010 Sep 142010 Sep 16

Other

Other2010 European Solid State Device Research Conference, ESSDERC 2010
CountrySpain
CitySevilla
Period10/9/1410/9/16

Fingerprint

metal oxide semiconductors
field effect transistors
augmentation
pulsed lasers
lasers
laser annealing
atomic layer epitaxy
transistors
capacitance

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Ok, I., Hung, P. Y., Veksler, D., Oh, J., & Jammy, P. M. R. (2010). High-performance enhancement-mode In0.53Ga0.47As surface channels n-MOSFET with thin In0.2Ga0.8As capping and laser anneal effect. In 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010 (pp. 166-169). [5618407] https://doi.org/10.1109/ESSDERC.2010.5618407
Ok, I. ; Hung, P. Y. ; Veksler, D. ; Oh, J. ; Jammy, P. Majhi R. / High-performance enhancement-mode In0.53Ga0.47As surface channels n-MOSFET with thin In0.2Ga0.8As capping and laser anneal effect. 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. pp. 166-169
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abstract = "In this work we have investigated the effect of thin In02Ga08As capping layer and pulsed laser annealing (PLA) on self-aligned enhancement mode n-channel In0.53Ga0.47As metal-oxide-semiconductor field effect transistor (MOSFET). We present the electrical and material characteristics of TaN/ZrO2/In0.2Ga0.8As/ In0.53Ga0.47As n-MOSFET with atomic layer deposition (ALD) ZrO2. Electrical characteristics with thin capacitance equivalent thickness (CET) (∼0.8 nm), and improved drain current with thin capping layer were obtained. N-channel high-k InGaAs-MOSFETs with good transistor behavior, i.e. improved drain current after additional pulsed laser anneal with RTA anneal, on In0.53Ga0.47As substrate have also been demonstrated.",
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Ok, I, Hung, PY, Veksler, D, Oh, J & Jammy, PMR 2010, High-performance enhancement-mode In0.53Ga0.47As surface channels n-MOSFET with thin In0.2Ga0.8As capping and laser anneal effect. in 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010., 5618407, pp. 166-169, 2010 European Solid State Device Research Conference, ESSDERC 2010, Sevilla, Spain, 10/9/14. https://doi.org/10.1109/ESSDERC.2010.5618407

High-performance enhancement-mode In0.53Ga0.47As surface channels n-MOSFET with thin In0.2Ga0.8As capping and laser anneal effect. / Ok, I.; Hung, P. Y.; Veksler, D.; Oh, J.; Jammy, P. Majhi R.

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. p. 166-169 5618407.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - In this work we have investigated the effect of thin In02Ga08As capping layer and pulsed laser annealing (PLA) on self-aligned enhancement mode n-channel In0.53Ga0.47As metal-oxide-semiconductor field effect transistor (MOSFET). We present the electrical and material characteristics of TaN/ZrO2/In0.2Ga0.8As/ In0.53Ga0.47As n-MOSFET with atomic layer deposition (ALD) ZrO2. Electrical characteristics with thin capacitance equivalent thickness (CET) (∼0.8 nm), and improved drain current with thin capping layer were obtained. N-channel high-k InGaAs-MOSFETs with good transistor behavior, i.e. improved drain current after additional pulsed laser anneal with RTA anneal, on In0.53Ga0.47As substrate have also been demonstrated.

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Ok I, Hung PY, Veksler D, Oh J, Jammy PMR. High-performance enhancement-mode In0.53Ga0.47As surface channels n-MOSFET with thin In0.2Ga0.8As capping and laser anneal effect. In 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. p. 166-169. 5618407 https://doi.org/10.1109/ESSDERC.2010.5618407