In this work we have investigated the effect of thin In02Ga08As capping layer and pulsed laser annealing (PLA) on self-aligned enhancement mode n-channel In0.53Ga0.47As metal-oxide-semiconductor field effect transistor (MOSFET). We present the electrical and material characteristics of TaN/ZrO2/In0.2Ga0.8As/ In0.53Ga0.47As n-MOSFET with atomic layer deposition (ALD) ZrO2. Electrical characteristics with thin capacitance equivalent thickness (CET) (∼0.8 nm), and improved drain current with thin capping layer were obtained. N-channel high-k InGaAs-MOSFETs with good transistor behavior, i.e. improved drain current after additional pulsed laser anneal with RTA anneal, on In0.53Ga0.47As substrate have also been demonstrated.