High-performance enhancement-mode In0.53Ga0.47As surface channels n-MOSFET with thin In0.2Ga0.8As capping and laser anneal effect

I. Ok, P. Y. Hung, D. Veksler, J. Oh, P. Majhi R. Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution


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Physics & Astronomy