High-performance hydrogen sensing properties and sensing mechanism in Pd-coated p-type Si nanowire arrays

Jisun Baek, Byungjin Jang, Min Hyung Kim, Wonkung Kim, Jeongmin Kim, Hyun Jun Rim, Sera Shin, Taeyoon Lee, Sungmee Cho, Wooyoung Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report on the H2 sensing performance and sensing mechanism in Pd-coated n- and p-type Si nanowire (NW) arrays, which were fabricated by an aqueous electroless etching method and sputtering. We found that the resistance of the Pd-coated n-type Si NWs decreased from the base resistance, whereas that of the p-type Si NW arrays increased, upon exposure to H2. The sensitivity (S = 1700% at 1% H2) of Pd-coated p-type NW arrays was much greater than that of the n-type NW arrays (S = 75%). Furthermore, we found that the dependency of the change in carrier density on H2 concentration was significantly greater in p-type Si NW arrays, while it was negligible in the n-type NW arrays. A Schottky barrier was formed between the Pd and n-Si (ϕM > ϕSC) before exposure to H2, which changed to an Ohmic contact (ϕM < ϕSC) after H2 exposure. In contrast, an Ohmic contact was formed between the Pd and p-Si (ϕM > ϕSC) before exposure to H2, which, after exposure, changed to a Schottky barrier (ϕM < ϕSC). Therefore, the p-type Si NW arrays were much more sensitive to H2 than the n-type Si NW arrays.

Original languageEnglish
Pages (from-to)465-471
Number of pages7
JournalSensors and Actuators, B: Chemical
Volume256
DOIs
Publication statusPublished - 2018 Mar 1

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Nanowires
Hydrogen
nanowires
hydrogen
Ohmic contacts
Carrier concentration
Sputtering
electric contacts
Etching
sputtering
etching
sensitivity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Baek, Jisun ; Jang, Byungjin ; Kim, Min Hyung ; Kim, Wonkung ; Kim, Jeongmin ; Rim, Hyun Jun ; Shin, Sera ; Lee, Taeyoon ; Cho, Sungmee ; Lee, Wooyoung. / High-performance hydrogen sensing properties and sensing mechanism in Pd-coated p-type Si nanowire arrays. In: Sensors and Actuators, B: Chemical. 2018 ; Vol. 256. pp. 465-471.
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abstract = "We report on the H2 sensing performance and sensing mechanism in Pd-coated n- and p-type Si nanowire (NW) arrays, which were fabricated by an aqueous electroless etching method and sputtering. We found that the resistance of the Pd-coated n-type Si NWs decreased from the base resistance, whereas that of the p-type Si NW arrays increased, upon exposure to H2. The sensitivity (S = 1700{\%} at 1{\%} H2) of Pd-coated p-type NW arrays was much greater than that of the n-type NW arrays (S = 75{\%}). Furthermore, we found that the dependency of the change in carrier density on H2 concentration was significantly greater in p-type Si NW arrays, while it was negligible in the n-type NW arrays. A Schottky barrier was formed between the Pd and n-Si (ϕM > ϕSC) before exposure to H2, which changed to an Ohmic contact (ϕM < ϕSC) after H2 exposure. In contrast, an Ohmic contact was formed between the Pd and p-Si (ϕM > ϕSC) before exposure to H2, which, after exposure, changed to a Schottky barrier (ϕM < ϕSC). Therefore, the p-type Si NW arrays were much more sensitive to H2 than the n-type Si NW arrays.",
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High-performance hydrogen sensing properties and sensing mechanism in Pd-coated p-type Si nanowire arrays. / Baek, Jisun; Jang, Byungjin; Kim, Min Hyung; Kim, Wonkung; Kim, Jeongmin; Rim, Hyun Jun; Shin, Sera; Lee, Taeyoon; Cho, Sungmee; Lee, Wooyoung.

In: Sensors and Actuators, B: Chemical, Vol. 256, 01.03.2018, p. 465-471.

Research output: Contribution to journalArticle

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T1 - High-performance hydrogen sensing properties and sensing mechanism in Pd-coated p-type Si nanowire arrays

AU - Baek, Jisun

AU - Jang, Byungjin

AU - Kim, Min Hyung

AU - Kim, Wonkung

AU - Kim, Jeongmin

AU - Rim, Hyun Jun

AU - Shin, Sera

AU - Lee, Taeyoon

AU - Cho, Sungmee

AU - Lee, Wooyoung

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N2 - We report on the H2 sensing performance and sensing mechanism in Pd-coated n- and p-type Si nanowire (NW) arrays, which were fabricated by an aqueous electroless etching method and sputtering. We found that the resistance of the Pd-coated n-type Si NWs decreased from the base resistance, whereas that of the p-type Si NW arrays increased, upon exposure to H2. The sensitivity (S = 1700% at 1% H2) of Pd-coated p-type NW arrays was much greater than that of the n-type NW arrays (S = 75%). Furthermore, we found that the dependency of the change in carrier density on H2 concentration was significantly greater in p-type Si NW arrays, while it was negligible in the n-type NW arrays. A Schottky barrier was formed between the Pd and n-Si (ϕM > ϕSC) before exposure to H2, which changed to an Ohmic contact (ϕM < ϕSC) after H2 exposure. In contrast, an Ohmic contact was formed between the Pd and p-Si (ϕM > ϕSC) before exposure to H2, which, after exposure, changed to a Schottky barrier (ϕM < ϕSC). Therefore, the p-type Si NW arrays were much more sensitive to H2 than the n-type Si NW arrays.

AB - We report on the H2 sensing performance and sensing mechanism in Pd-coated n- and p-type Si nanowire (NW) arrays, which were fabricated by an aqueous electroless etching method and sputtering. We found that the resistance of the Pd-coated n-type Si NWs decreased from the base resistance, whereas that of the p-type Si NW arrays increased, upon exposure to H2. The sensitivity (S = 1700% at 1% H2) of Pd-coated p-type NW arrays was much greater than that of the n-type NW arrays (S = 75%). Furthermore, we found that the dependency of the change in carrier density on H2 concentration was significantly greater in p-type Si NW arrays, while it was negligible in the n-type NW arrays. A Schottky barrier was formed between the Pd and n-Si (ϕM > ϕSC) before exposure to H2, which changed to an Ohmic contact (ϕM < ϕSC) after H2 exposure. In contrast, an Ohmic contact was formed between the Pd and p-Si (ϕM > ϕSC) before exposure to H2, which, after exposure, changed to a Schottky barrier (ϕM < ϕSC). Therefore, the p-type Si NW arrays were much more sensitive to H2 than the n-type Si NW arrays.

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