High-performance hydrogen sensing properties and sensing mechanism in Pd-coated p-type Si nanowire arrays

Jisun Baek; Byungjin Jang; Min Hyung Kim; Wonkung Kim; Jeongmin Kim; Hyun Jun Rim; Sera Shin; Taeyoon Lee; Sungmee Cho; Wooyoung Lee

doi:10.1016/j.snb.2017.10.109

High-performance hydrogen sensing properties and sensing mechanism in Pd-coated p-type Si nanowire arrays

Jisun Baek, Byungjin Jang, Min Hyung Kim, Wonkung Kim, Jeongmin Kim, Hyun Jun Rim, Sera Shin, Taeyoon Lee, Sungmee Cho, Wooyoung Lee

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

We report on the H₂ sensing performance and sensing mechanism in Pd-coated n- and p-type Si nanowire (NW) arrays, which were fabricated by an aqueous electroless etching method and sputtering. We found that the resistance of the Pd-coated n-type Si NWs decreased from the base resistance, whereas that of the p-type Si NW arrays increased, upon exposure to H₂. The sensitivity (S = 1700% at 1% H₂) of Pd-coated p-type NW arrays was much greater than that of the n-type NW arrays (S = 75%). Furthermore, we found that the dependency of the change in carrier density on H₂ concentration was significantly greater in p-type Si NW arrays, while it was negligible in the n-type NW arrays. A Schottky barrier was formed between the Pd and n-Si (ϕ_M > ϕ_SC) before exposure to H₂, which changed to an Ohmic contact (ϕ_M < ϕ_SC) after H₂ exposure. In contrast, an Ohmic contact was formed between the Pd and p-Si (ϕ_M > ϕ_SC) before exposure to H₂, which, after exposure, changed to a Schottky barrier (ϕ_M < ϕ_SC). Therefore, the p-type Si NW arrays were much more sensitive to H₂ than the n-type Si NW arrays.

Original language	English
Pages (from-to)	465-471
Number of pages	7
Journal	Sensors and Actuators, B: Chemical
Volume	256
DOIs	https://doi.org/10.1016/j.snb.2017.10.109
Publication status	Published - 2018 Mar

Bibliographical note

Funding Information:
This work was supported by the Korean government (MSIP) (2014R1A2A1A10053869), and the Priority Research Centers Program (2009-0093823) through the National Research Foundation of Korea (NRF).

Publisher Copyright:
© 2017

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.snb.2017.10.109

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title = "High-performance hydrogen sensing properties and sensing mechanism in Pd-coated p-type Si nanowire arrays",

abstract = "We report on the H2 sensing performance and sensing mechanism in Pd-coated n- and p-type Si nanowire (NW) arrays, which were fabricated by an aqueous electroless etching method and sputtering. We found that the resistance of the Pd-coated n-type Si NWs decreased from the base resistance, whereas that of the p-type Si NW arrays increased, upon exposure to H2. The sensitivity (S = 1700% at 1% H2) of Pd-coated p-type NW arrays was much greater than that of the n-type NW arrays (S = 75%). Furthermore, we found that the dependency of the change in carrier density on H2 concentration was significantly greater in p-type Si NW arrays, while it was negligible in the n-type NW arrays. A Schottky barrier was formed between the Pd and n-Si (ϕM > ϕSC) before exposure to H2, which changed to an Ohmic contact (ϕM < ϕSC) after H2 exposure. In contrast, an Ohmic contact was formed between the Pd and p-Si (ϕM > ϕSC) before exposure to H2, which, after exposure, changed to a Schottky barrier (ϕM < ϕSC). Therefore, the p-type Si NW arrays were much more sensitive to H2 than the n-type Si NW arrays.",

author = "Jisun Baek and Byungjin Jang and Kim, {Min Hyung} and Wonkung Kim and Jeongmin Kim and Rim, {Hyun Jun} and Sera Shin and Taeyoon Lee and Sungmee Cho and Wooyoung Lee",

note = "Funding Information: This work was supported by the Korean government (MSIP) (2014R1A2A1A10053869), and the Priority Research Centers Program (2009-0093823) through the National Research Foundation of Korea (NRF). Publisher Copyright: {\textcopyright} 2017",

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doi = "10.1016/j.snb.2017.10.109",

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AU - Baek, Jisun

AU - Jang, Byungjin

AU - Kim, Min Hyung

AU - Kim, Wonkung

AU - Kim, Jeongmin

AU - Rim, Hyun Jun

AU - Shin, Sera

AU - Lee, Taeyoon

AU - Cho, Sungmee

AU - Lee, Wooyoung

N1 - Funding Information: This work was supported by the Korean government (MSIP) (2014R1A2A1A10053869), and the Priority Research Centers Program (2009-0093823) through the National Research Foundation of Korea (NRF). Publisher Copyright: © 2017

PY - 2018/3

Y1 - 2018/3

N2 - We report on the H2 sensing performance and sensing mechanism in Pd-coated n- and p-type Si nanowire (NW) arrays, which were fabricated by an aqueous electroless etching method and sputtering. We found that the resistance of the Pd-coated n-type Si NWs decreased from the base resistance, whereas that of the p-type Si NW arrays increased, upon exposure to H2. The sensitivity (S = 1700% at 1% H2) of Pd-coated p-type NW arrays was much greater than that of the n-type NW arrays (S = 75%). Furthermore, we found that the dependency of the change in carrier density on H2 concentration was significantly greater in p-type Si NW arrays, while it was negligible in the n-type NW arrays. A Schottky barrier was formed between the Pd and n-Si (ϕM > ϕSC) before exposure to H2, which changed to an Ohmic contact (ϕM < ϕSC) after H2 exposure. In contrast, an Ohmic contact was formed between the Pd and p-Si (ϕM > ϕSC) before exposure to H2, which, after exposure, changed to a Schottky barrier (ϕM < ϕSC). Therefore, the p-type Si NW arrays were much more sensitive to H2 than the n-type Si NW arrays.

AB - We report on the H2 sensing performance and sensing mechanism in Pd-coated n- and p-type Si nanowire (NW) arrays, which were fabricated by an aqueous electroless etching method and sputtering. We found that the resistance of the Pd-coated n-type Si NWs decreased from the base resistance, whereas that of the p-type Si NW arrays increased, upon exposure to H2. The sensitivity (S = 1700% at 1% H2) of Pd-coated p-type NW arrays was much greater than that of the n-type NW arrays (S = 75%). Furthermore, we found that the dependency of the change in carrier density on H2 concentration was significantly greater in p-type Si NW arrays, while it was negligible in the n-type NW arrays. A Schottky barrier was formed between the Pd and n-Si (ϕM > ϕSC) before exposure to H2, which changed to an Ohmic contact (ϕM < ϕSC) after H2 exposure. In contrast, an Ohmic contact was formed between the Pd and p-Si (ϕM > ϕSC) before exposure to H2, which, after exposure, changed to a Schottky barrier (ϕM < ϕSC). Therefore, the p-type Si NW arrays were much more sensitive to H2 than the n-type Si NW arrays.

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High-performance hydrogen sensing properties and sensing mechanism in Pd-coated p-type Si nanowire arrays

Abstract

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