High-performance hysteresis-free perovskite transistors through anion engineering

Huihui Zhu; Ao Liu; Kyu In Shim; Haksoon Jung; Taoyu Zou; Youjin Reo; Hyunjun Kim; Jeong Woo Han; Yimu Chen; Hye Yong Chu; Jun Hyung Lim; Hyung Jun Kim; Sai Bai; Yong Young Noh

doi:10.1038/s41467-022-29434-x

High-performance hysteresis-free perovskite transistors through anion engineering

Huihui Zhu, Ao Liu, Kyu In Shim, Haksoon Jung, Taoyu Zou, Youjin Reo, Hyunjun Kim, Jeong Woo Han, Yimu Chen, Hye Yong Chu, Jun Hyung Lim, Hyung Jun Kim, Sai Bai, Yong Young Noh

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report high-performance hysteresis-free p-channel perovskite thin-film transistors (TFTs) based on methylammonium tin iodide (MASnI₃) and rationalise the effects of halide (I/Br/Cl) anion engineering on film quality improvement and tin/iodine vacancy suppression, realising high hole mobilities of 20 cm² V⁻¹ s⁻¹, current on/off ratios exceeding 10⁷, and threshold voltages of 0 V along with high operational stabilities and reproducibilities. We reveal ion migration has a negligible contribution to the hysteresis of Sn-based perovskite TFTs; instead, minority carrier trapping is the primary cause. Finally, we integrate the perovskite TFTs with commercialised n-channel indium gallium zinc oxide TFTs on a single chip to construct high-gain complementary inverters, facilitating the development of halide perovskite semiconductors for printable electronics and circuits.

Original language	English
Article number	1741
Journal	Nature communications
Volume	13
Issue number	1
DOIs	https://doi.org/10.1038/s41467-022-29434-x
Publication status	Published - 2022 Dec

Bibliographical note

Funding Information:
This study was supported by the Ministry of Science and ICT through the National Research Foundation, funded by the Korean government (2021R1A2C3005401, and 2020R1A4A1019455). This research was also supported by the Samsung Display Corporation. H.H. Z. thanks Won-Tae Park, Ji-Young Go, and Gi-Seong Ryu for their help with the metal oxide TFTs.

Publisher Copyright:
© 2022, The Author(s).

All Science Journal Classification (ASJC) codes

Chemistry(all)
Biochemistry, Genetics and Molecular Biology(all)
General
Physics and Astronomy(all)

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10.1038/s41467-022-29434-x

Cite this

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title = "High-performance hysteresis-free perovskite transistors through anion engineering",

abstract = "Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report high-performance hysteresis-free p-channel perovskite thin-film transistors (TFTs) based on methylammonium tin iodide (MASnI3) and rationalise the effects of halide (I/Br/Cl) anion engineering on film quality improvement and tin/iodine vacancy suppression, realising high hole mobilities of 20 cm2 V−1 s−1, current on/off ratios exceeding 107, and threshold voltages of 0 V along with high operational stabilities and reproducibilities. We reveal ion migration has a negligible contribution to the hysteresis of Sn-based perovskite TFTs; instead, minority carrier trapping is the primary cause. Finally, we integrate the perovskite TFTs with commercialised n-channel indium gallium zinc oxide TFTs on a single chip to construct high-gain complementary inverters, facilitating the development of halide perovskite semiconductors for printable electronics and circuits.",

author = "Huihui Zhu and Ao Liu and Shim, {Kyu In} and Haksoon Jung and Taoyu Zou and Youjin Reo and Hyunjun Kim and Han, {Jeong Woo} and Yimu Chen and Chu, {Hye Yong} and Lim, {Jun Hyung} and Kim, {Hyung Jun} and Sai Bai and Noh, {Yong Young}",

note = "Funding Information: This study was supported by the Ministry of Science and ICT through the National Research Foundation, funded by the Korean government (2021R1A2C3005401, and 2020R1A4A1019455). This research was also supported by the Samsung Display Corporation. H.H. Z. thanks Won-Tae Park, Ji-Young Go, and Gi-Seong Ryu for their help with the metal oxide TFTs. Publisher Copyright: {\textcopyright} 2022, The Author(s).",

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doi = "10.1038/s41467-022-29434-x",

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AU - Liu, Ao

AU - Shim, Kyu In

AU - Jung, Haksoon

AU - Zou, Taoyu

AU - Reo, Youjin

AU - Kim, Hyunjun

AU - Han, Jeong Woo

AU - Chen, Yimu

AU - Chu, Hye Yong

AU - Lim, Jun Hyung

AU - Kim, Hyung Jun

AU - Bai, Sai

AU - Noh, Yong Young

N1 - Funding Information: This study was supported by the Ministry of Science and ICT through the National Research Foundation, funded by the Korean government (2021R1A2C3005401, and 2020R1A4A1019455). This research was also supported by the Samsung Display Corporation. H.H. Z. thanks Won-Tae Park, Ji-Young Go, and Gi-Seong Ryu for their help with the metal oxide TFTs. Publisher Copyright: © 2022, The Author(s).

PY - 2022/12

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N2 - Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report high-performance hysteresis-free p-channel perovskite thin-film transistors (TFTs) based on methylammonium tin iodide (MASnI3) and rationalise the effects of halide (I/Br/Cl) anion engineering on film quality improvement and tin/iodine vacancy suppression, realising high hole mobilities of 20 cm2 V−1 s−1, current on/off ratios exceeding 107, and threshold voltages of 0 V along with high operational stabilities and reproducibilities. We reveal ion migration has a negligible contribution to the hysteresis of Sn-based perovskite TFTs; instead, minority carrier trapping is the primary cause. Finally, we integrate the perovskite TFTs with commercialised n-channel indium gallium zinc oxide TFTs on a single chip to construct high-gain complementary inverters, facilitating the development of halide perovskite semiconductors for printable electronics and circuits.

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High-performance hysteresis-free perovskite transistors through anion engineering

Abstract

Bibliographical note

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