High-performance III-V devices for future logic applications

D. H. Kim, T. W. Kim, Rh Baek, P. D. Kirsch, W. Maszara, J. A. Del Alamo, D. A. Antoniadis, M. Urteaga, B. Brar, Hm Kwon, C. S. Shin, W. K. Park, Y. D. Cho, Sh Shin, Dh Ko, K. S. Seo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

High-mobility III-V transistors are poised to take the lead on future high performance logic operation. If this happens, indium-rich InxGa1-xAs is the most promising n-channel material. Indeed, remarkable progress has been made, including III-V gate-stacks with ALD-grown gate dielectrics. This paper reviews the evolution of high-performance III-V devices for future logic applications and discuss a possible path forward to further improve their logic figure-of-merits.

Original languageEnglish
Title of host publication2014 IEEE International Electron Devices Meeting, IEDM 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages25.2.1-25.2.4
EditionFebruary
ISBN (Electronic)9781479980017
DOIs
Publication statusPublished - 2015 Feb 20
Event2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
Duration: 2014 Dec 152014 Dec 17

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
NumberFebruary
Volume2015-February
ISSN (Print)0163-1918

Other

Other2014 60th IEEE International Electron Devices Meeting, IEDM 2014
CountryUnited States
CitySan Francisco
Period14/12/1514/12/17

Fingerprint

Indium
Gate dielectrics
logic
Transistors
figure of merit
indium
transistors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kim, D. H., Kim, T. W., Baek, R., Kirsch, P. D., Maszara, W., Del Alamo, J. A., ... Seo, K. S. (2015). High-performance III-V devices for future logic applications. In 2014 IEEE International Electron Devices Meeting, IEDM 2014 (February ed., pp. 25.2.1-25.2.4). [7047105] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7047105
Kim, D. H. ; Kim, T. W. ; Baek, Rh ; Kirsch, P. D. ; Maszara, W. ; Del Alamo, J. A. ; Antoniadis, D. A. ; Urteaga, M. ; Brar, B. ; Kwon, Hm ; Shin, C. S. ; Park, W. K. ; Cho, Y. D. ; Shin, Sh ; Ko, Dh ; Seo, K. S. / High-performance III-V devices for future logic applications. 2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 25.2.1-25.2.4 (Technical Digest - International Electron Devices Meeting, IEDM; February).
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abstract = "High-mobility III-V transistors are poised to take the lead on future high performance logic operation. If this happens, indium-rich InxGa1-xAs is the most promising n-channel material. Indeed, remarkable progress has been made, including III-V gate-stacks with ALD-grown gate dielectrics. This paper reviews the evolution of high-performance III-V devices for future logic applications and discuss a possible path forward to further improve their logic figure-of-merits.",
author = "Kim, {D. H.} and Kim, {T. W.} and Rh Baek and Kirsch, {P. D.} and W. Maszara and {Del Alamo}, {J. A.} and Antoniadis, {D. A.} and M. Urteaga and B. Brar and Hm Kwon and Shin, {C. S.} and Park, {W. K.} and Cho, {Y. D.} and Sh Shin and Dh Ko and Seo, {K. S.}",
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Kim, DH, Kim, TW, Baek, R, Kirsch, PD, Maszara, W, Del Alamo, JA, Antoniadis, DA, Urteaga, M, Brar, B, Kwon, H, Shin, CS, Park, WK, Cho, YD, Shin, S, Ko, D & Seo, KS 2015, High-performance III-V devices for future logic applications. in 2014 IEEE International Electron Devices Meeting, IEDM 2014. February edn, 7047105, Technical Digest - International Electron Devices Meeting, IEDM, no. February, vol. 2015-February, Institute of Electrical and Electronics Engineers Inc., pp. 25.2.1-25.2.4, 2014 60th IEEE International Electron Devices Meeting, IEDM 2014, San Francisco, United States, 14/12/15. https://doi.org/10.1109/IEDM.2014.7047105

High-performance III-V devices for future logic applications. / Kim, D. H.; Kim, T. W.; Baek, Rh; Kirsch, P. D.; Maszara, W.; Del Alamo, J. A.; Antoniadis, D. A.; Urteaga, M.; Brar, B.; Kwon, Hm; Shin, C. S.; Park, W. K.; Cho, Y. D.; Shin, Sh; Ko, Dh; Seo, K. S.

2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. p. 25.2.1-25.2.4 7047105 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Kim DH, Kim TW, Baek R, Kirsch PD, Maszara W, Del Alamo JA et al. High-performance III-V devices for future logic applications. In 2014 IEEE International Electron Devices Meeting, IEDM 2014. February ed. Institute of Electrical and Electronics Engineers Inc. 2015. p. 25.2.1-25.2.4. 7047105. (Technical Digest - International Electron Devices Meeting, IEDM; February). https://doi.org/10.1109/IEDM.2014.7047105