High performance InGaAs channel MOSFETs on highly resistive InAlAs buffer layers

Sang Tae Lee, In Geun Lee, Hyunchul Jang, Minwoo Kong, Changhun Song, Chang Zoo Kim, Sang Hyun Jung, Youngsu Choi, Shinkeun Kim, Su keun Eom, Kwang seok Seo, Dae Hyun Kim, Dae Hong Ko, Chan Soo Shin

Research output: Contribution to journalArticlepeer-review

Abstract

We investigated the effect of growth temperature on the structural and electrical properties of InAlAs layers grown on InP (1 0 0) substrates by metalorganic chemical vapor deposition (MOCVD) method. Flat surface morphology of InAlAs layers with root mean square (RMS) surface roughness values below 0.4 nm were obtained at 500 °C and 660 °C, while RMS surface roughness values of InAlAs layers grown in the region of intermediate temperature increase from 0.7 nm at 540 °C to 3.9 nm at 620 °C with increasing growth temperature. This increase in surface roughness is caused by the phase separation of the InAlAs layer, which is divided into In-rich and Al-rich column regions. The resistivity values of the InAlAs layers grown at 500 °C and 660 °C, in which the phase separation was not observed, were analyzed by the transmission line method (TLM) and those values were ~1 × 104 Ω·cm and 0.06 Ω·cm, respectively. We propose that oxygen atoms being incorporated into InAlAs layers during growth were the cause effect explaining the change in resistivity depending on the growth temperature. In order to evaluate high-resistivity InAlAs layers grown at 500 °C for a buffer layer of devices, we fabricated InGaAs-channel metal oxide field effect transistors (MOSFETs). The on/off current ratio values obtained from ID-VG transfer measurement was a value of 6.10 × 105, indicating a high-performance characteristic.

Original languageEnglish
Article number107940
JournalSolid-State Electronics
Volume176
DOIs
Publication statusPublished - 2021 Feb

Bibliographical note

Funding Information:
This research was supported by the Civil-Military Technology Cooperation program (NO. 19-CM-BD-05) and by the National Research Foundation of Korea (NRF) through the Nano Material Technology Development Program, Ministry of Science and ICT, under Grant NRF-2017M3A7B4049518.

Funding Information:
This research was supported by the Civil-Military Technology Cooperation program (NO. 19-CM-BD-05 ) and by the National Research Foundation of Korea ( NRF ) through the Nano Material Technology Development Program, Ministry of Science and ICT , under Grant NRF-2017M3A7B4049518 .

Publisher Copyright:
© 2020 Elsevier Ltd

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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