High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

Whang Je Woo, Taewook Nam, Il Kwon Oh, Wanjoo Maeng, Hyungjun Kim

Research output: Contribution to journalArticle

Abstract

The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

Original languageEnglish
Pages (from-to)652-656
Number of pages5
JournalMetals and Materials International
Volume24
Issue number3
DOIs
Publication statusPublished - 2018 May 1

Fingerprint

Diffusion barriers
inks
Thin film transistors
Ink
transistors
thin films
stress measurement
Stress measurement
barrier layers
Temperature measurement
Electric properties
industries
Display devices
electrical properties
insulators
Costs
Industry
temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

Cite this

Woo, Whang Je ; Nam, Taewook ; Oh, Il Kwon ; Maeng, Wanjoo ; Kim, Hyungjun. / High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation. In: Metals and Materials International. 2018 ; Vol. 24, No. 3. pp. 652-656.
@article{a2cc8d064d304160b7d43a7771597415,
title = "High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation",
abstract = "The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.",
author = "Woo, {Whang Je} and Taewook Nam and Oh, {Il Kwon} and Wanjoo Maeng and Hyungjun Kim",
year = "2018",
month = "5",
day = "1",
doi = "10.1007/s12540-018-0045-3",
language = "English",
volume = "24",
pages = "652--656",
journal = "Metals and Materials International",
issn = "1598-9623",
publisher = "Korean Institute of Metals and Materials",
number = "3",

}

High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation. / Woo, Whang Je; Nam, Taewook; Oh, Il Kwon; Maeng, Wanjoo; Kim, Hyungjun.

In: Metals and Materials International, Vol. 24, No. 3, 01.05.2018, p. 652-656.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

AU - Woo, Whang Je

AU - Nam, Taewook

AU - Oh, Il Kwon

AU - Maeng, Wanjoo

AU - Kim, Hyungjun

PY - 2018/5/1

Y1 - 2018/5/1

N2 - The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

AB - The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

UR - http://www.scopus.com/inward/record.url?scp=85042613169&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85042613169&partnerID=8YFLogxK

U2 - 10.1007/s12540-018-0045-3

DO - 10.1007/s12540-018-0045-3

M3 - Article

AN - SCOPUS:85042613169

VL - 24

SP - 652

EP - 656

JO - Metals and Materials International

JF - Metals and Materials International

SN - 1598-9623

IS - 3

ER -