High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

Whang Je Woo, Taewook Nam, Il Kwon Oh, Wanjoo Maeng, Hyungjun Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

Original languageEnglish
Pages (from-to)652-656
Number of pages5
JournalMetals and Materials International
Volume24
Issue number3
DOIs
Publication statusPublished - 2018 May 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation'. Together they form a unique fingerprint.

  • Cite this