Abstract
Oxide semiconductors afford a promising alternative to organic semiconductors and amorphous silicon materials in applications requiring transparent thin film transistors (TFTs). We synthesized an aqueous inorganic precursor by a direct dissolution of zinc hydroxide in ammonium hydroxide solution from which a dense and uniform ZnO semiconducting layer is achieved. Solution-processed ZnO-TFTs prepared at 140 °C by microwave irradiation have shown enhanced device characteristics of ∼1.7 cm2 V -1s-1 mobility and a ∼107 on/off current ratio, with good air stability. Spectroscopic analyses confirmed that such a device improvement originates from accelerated dehydroxylation and better crystallization at low temperature by microwave irradiation. Our results suggest that solution-processable oxide semiconductors have potential for low-temperature and high-performance applications in transparent devices.
Original language | English |
---|---|
Pages (from-to) | 1102-1108 |
Number of pages | 7 |
Journal | Journal of Materials Chemistry |
Volume | 21 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2011 Jan 28 |
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Chemistry