High-performance low-voltage organic field-effect transistors prepared on electro-polished aluminum wires

We report the preparation of high-performance low-voltage pentacene-based organic field-effect transistors (OFETs) fabricated on a metallic fiber (Al wire) substrate. The surface roughness of the wire was significantly reduced after 10 min of electro-polishing. A 120 nm thick Al ₂O ₃ gate dielectric layer was deposited on the anodized wire, followed by octadecyltrichlorosilane (ODTS) treatment. The ODTS-modified Al ₂O ₃ gate dielectrics formed around the Al wire showed a high capacitance of 50.1 nF cm ^-2 and hydrophobic surface characteristics. The resulting OFETs exhibited hysteresis-free operation with a high mobility of 0.345 cm ² V ^-1 s ^-1 within a low operating voltage range of -5 V, and maintained their high performance at an applied tensile strain of bending radius ∼2.2.