High-performance low-voltage tetracene phototransistors with polymer/AlOx bilayer dielectric

Jeong M. Choi, Kimoon Lee, D. K. Hwang, Ji Hoon Park, Eugene Kim, Seongil Im

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We report on the tetracene-based photo thin-film transistors (photo-TFTs) which adopt thin poly-4-vinylphenoi (PVP)/aluminum oxide (AlOx) bilayer and semitransparent NiOx for a gate dielectric and source/drain (S/D) electrode, respectively. Quite a large capacitance of 31 nF/cm2 was effectively achieved from the thin polymer/high-k oxide dielectric bilayer that also showed a high dielectric strength of ∼4 MV/cm. Our tetracene-based TFTs exhibited quite a good field effect mobility (∼0.23 cm2/V s) and a high on/off current ratio of ∼ 105, while operating at a voltage less than -8 V. The tetracene-TFTs demonstrated good static photoresponses to green (540 nm), blue (450 nm), and ultraviolet (364 nm) illuminations under the low voltage.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume9
Issue number9
DOIs
Publication statusPublished - 2006 Aug 3

Fingerprint

Phototransistors
phototransistors
Aluminum Oxide
low voltage
Polymers
aluminum oxides
Aluminum
Oxides
Gate dielectrics
polymers
Electric potential
Thin film transistors
high polymers
Capacitance
Lighting
Electrodes
transistors
capacitance
illumination
electrodes

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Choi, Jeong M. ; Lee, Kimoon ; Hwang, D. K. ; Park, Ji Hoon ; Kim, Eugene ; Im, Seongil. / High-performance low-voltage tetracene phototransistors with polymer/AlOx bilayer dielectric. In: Electrochemical and Solid-State Letters. 2006 ; Vol. 9, No. 9.
@article{b70d38f396bb4788a8a3bba3bbcdf5d4,
title = "High-performance low-voltage tetracene phototransistors with polymer/AlOx bilayer dielectric",
abstract = "We report on the tetracene-based photo thin-film transistors (photo-TFTs) which adopt thin poly-4-vinylphenoi (PVP)/aluminum oxide (AlOx) bilayer and semitransparent NiOx for a gate dielectric and source/drain (S/D) electrode, respectively. Quite a large capacitance of 31 nF/cm2 was effectively achieved from the thin polymer/high-k oxide dielectric bilayer that also showed a high dielectric strength of ∼4 MV/cm. Our tetracene-based TFTs exhibited quite a good field effect mobility (∼0.23 cm2/V s) and a high on/off current ratio of ∼ 105, while operating at a voltage less than -8 V. The tetracene-TFTs demonstrated good static photoresponses to green (540 nm), blue (450 nm), and ultraviolet (364 nm) illuminations under the low voltage.",
author = "Choi, {Jeong M.} and Kimoon Lee and Hwang, {D. K.} and Park, {Ji Hoon} and Eugene Kim and Seongil Im",
year = "2006",
month = "8",
day = "3",
doi = "10.1149/1.2211847",
language = "English",
volume = "9",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "9",

}

High-performance low-voltage tetracene phototransistors with polymer/AlOx bilayer dielectric. / Choi, Jeong M.; Lee, Kimoon; Hwang, D. K.; Park, Ji Hoon; Kim, Eugene; Im, Seongil.

In: Electrochemical and Solid-State Letters, Vol. 9, No. 9, 03.08.2006.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High-performance low-voltage tetracene phototransistors with polymer/AlOx bilayer dielectric

AU - Choi, Jeong M.

AU - Lee, Kimoon

AU - Hwang, D. K.

AU - Park, Ji Hoon

AU - Kim, Eugene

AU - Im, Seongil

PY - 2006/8/3

Y1 - 2006/8/3

N2 - We report on the tetracene-based photo thin-film transistors (photo-TFTs) which adopt thin poly-4-vinylphenoi (PVP)/aluminum oxide (AlOx) bilayer and semitransparent NiOx for a gate dielectric and source/drain (S/D) electrode, respectively. Quite a large capacitance of 31 nF/cm2 was effectively achieved from the thin polymer/high-k oxide dielectric bilayer that also showed a high dielectric strength of ∼4 MV/cm. Our tetracene-based TFTs exhibited quite a good field effect mobility (∼0.23 cm2/V s) and a high on/off current ratio of ∼ 105, while operating at a voltage less than -8 V. The tetracene-TFTs demonstrated good static photoresponses to green (540 nm), blue (450 nm), and ultraviolet (364 nm) illuminations under the low voltage.

AB - We report on the tetracene-based photo thin-film transistors (photo-TFTs) which adopt thin poly-4-vinylphenoi (PVP)/aluminum oxide (AlOx) bilayer and semitransparent NiOx for a gate dielectric and source/drain (S/D) electrode, respectively. Quite a large capacitance of 31 nF/cm2 was effectively achieved from the thin polymer/high-k oxide dielectric bilayer that also showed a high dielectric strength of ∼4 MV/cm. Our tetracene-based TFTs exhibited quite a good field effect mobility (∼0.23 cm2/V s) and a high on/off current ratio of ∼ 105, while operating at a voltage less than -8 V. The tetracene-TFTs demonstrated good static photoresponses to green (540 nm), blue (450 nm), and ultraviolet (364 nm) illuminations under the low voltage.

UR - http://www.scopus.com/inward/record.url?scp=33746527551&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746527551&partnerID=8YFLogxK

U2 - 10.1149/1.2211847

DO - 10.1149/1.2211847

M3 - Article

AN - SCOPUS:33746527551

VL - 9

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 9

ER -