High-performance low-voltage tetracene phototransistors with polymer/AlOx bilayer dielectric

Jeong M. Choi, Kimoon Lee, D. K. Hwang, Ji Hoon Park, Eugene Kim, Seongil Im

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We report on the tetracene-based photo thin-film transistors (photo-TFTs) which adopt thin poly-4-vinylphenoi (PVP)/aluminum oxide (AlOx) bilayer and semitransparent NiOx for a gate dielectric and source/drain (S/D) electrode, respectively. Quite a large capacitance of 31 nF/cm2 was effectively achieved from the thin polymer/high-k oxide dielectric bilayer that also showed a high dielectric strength of ∼4 MV/cm. Our tetracene-based TFTs exhibited quite a good field effect mobility (∼0.23 cm2/V s) and a high on/off current ratio of ∼ 105, while operating at a voltage less than -8 V. The tetracene-TFTs demonstrated good static photoresponses to green (540 nm), blue (450 nm), and ultraviolet (364 nm) illuminations under the low voltage.

Original languageEnglish
Pages (from-to)G289-G291
JournalElectrochemical and Solid-State Letters
Volume9
Issue number9
DOIs
Publication statusPublished - 2006 Aug 3

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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